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BAT54_NL

Description
0.2 A, 30 V, SILICON, SIGNAL DIODE
CategoryDiscrete semiconductor    diode   
File Size107KB,3 Pages
ManufacturerFairchild
Websitehttp://www.fairchildsemi.com/
Environmental Compliance
Download Datasheet Parametric View All

BAT54_NL Overview

0.2 A, 30 V, SILICON, SIGNAL DIODE

BAT54_NL Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerFairchild
Parts packaging codeSOT-23
package instructionR-PDSO-G3
Contacts3
Reach Compliance Codecompli
ECCN codeEAR99
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)1 V
JEDEC-95 codeTO-236AB
JESD-30 codeR-PDSO-G3
JESD-609 codee3
Humidity sensitivity level1
Maximum non-repetitive peak forward current0.6 A
Number of components1
Number of terminals3
Maximum operating temperature125 °C
Maximum output current0.2 A
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)260
Maximum power dissipation0.29 W
Certification statusNot Qualified
Maximum repetitive peak reverse voltage30 V
Maximum reverse recovery time0.005 µs
surface mountYES
technologySCHOTTKY
Terminal surfaceMatte Tin (Sn)
Terminal formGULL WING
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
BAT54/A/C/S Schottky Diodes
February 2005
BAT54/A/C/S
Schottky Diodes
Connection Diagram
BAT54
3
3
3
BAT54A
3
L4P
2
1
1
2
1
BAT54C
3
2NC
1
3
2
BAT54S
SOT-23
MARKING
BAT54 = L4P BAT54A = L42
BAT54C = L43 BAT54S = L44
1
2
1
2
Absolute Maximum Ratings *
Symbol
V
RRM
I
F(AV)
I
FSM
T
STG
T
J
T
a
= 25°C unless otherwise noted
Parameter
Maximum Repetitive Reverse Voltage
Average Rectified Forward Current
Non-repetitive Peak Forward Surge Current
Pulse Width = 1.0 second
Storage Temperature Range
Operating Junction Temperature
Value
30
200
600
-55 to +150
-55 to +150
Unit
V
mA
mA
°C
°C
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
Thermal Characteristics
Symbol
P
D
R
θJA
Power Dissipation
Thermal Resistance, Junction to Ambient
T
C
= 25°C unless otherwise noted
Parameter
Value
290
430
Unit
mW
°C/W
Electrical Characteristics
Symbol
V
R
V
F
Parameter
Breakdown Voltage
Forward Voltage
I
R
= 10µA
I
F
= 0.1mA
I
F
= 1mA
I
F
= 10mA
I
F
= 30mA
I
F
= 100mA
V
R
= 25V
Conditions
Min.
30
Max.
240
320
400
500
0.8
2
10
5.0
Units
V
mV
mV
mV
mV
V
µA
pF
ns
I
R
C
T
t
rr
Reverse Leakage
Total Capacitance
Reverse Recovery Time
V
R
= 1V, f = 1.0MHz
I
F
= I
R
= 10mA, I
RR
= 1.0mA,
R
L
= 100Ω
©2005 Fairchild Semiconductor Corporation
1
www.fairchildsemi.com
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