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BAT60B

Description
3 A, SILICON, RECTIFIER DIODE
CategoryDiscrete semiconductor    diode   
File Size23KB,3 Pages
ManufacturerSIEMENS
Websitehttp://www.infineon.com/
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BAT60B Overview

3 A, SILICON, RECTIFIER DIODE

BAT60B Parametric

Parameter NameAttribute value
MakerSIEMENS
package instructionR-PDSO-G2
Reach Compliance Codeunknown
applicationGENERAL PURPOSE
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
JESD-30 codeR-PDSO-G2
Maximum non-repetitive peak forward current0.005 A
Number of components1
Phase1
Number of terminals2
Maximum output current3 A
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Maximum power dissipation1.35 W
Certification statusNot Qualified
surface mountYES
technologySCHOTTKY
Terminal formGULL WING
Terminal locationDUAL
Base Number Matches1
BAT 60B
Silicon Schottky Diode
Rectifier Schottky diode for mobile communication
Low voltage high inductane
For power supply
For clamping and proptection in low voltage
application
For detection and step-up-conversion
2
1
VPS05176
ESD: Electrostatic discharge
sensitive device, observe handling precaution!
Type
BAT 60B
Marking
blue/5
Ordering Code
Q62702-A1189
Pin Configuration
1=C
2=A
Package
SOD-323
Maximum Ratings
Parameter
Diode reverse voltage
Forward current
Surge forward current (t< 100µs)
Total power dissipation,
T
S
= 28 °C
Junction temperature
Storage temperature
Maximum Ratings
Junction - ambient
1)
Symbol
Value
10
3
5
1350
150
- 55 ...+150
Unit
V
A
mA
mW
°C
V
R
I
F
I
FSM
P
tot
T
j
T
stg
R
thJA
R
thJS
160
90
K/W
Junction - soldering point
1) Package mounted on epoxy pcb 40mm x 40mm x 1.5mm / 0.5cm 2 Cu
Semiconductor Group
Semiconductor Group
1
1
Sep-04-1998
1998-11-01

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