BAT 62-07W
Silicon Schottky Diode
•
Low barrier diode for detectors up to GHz
frequencies
3
4
2
1
VPS05605
ESD: Electrostatic discharge
sensitive device, observe handling precaution
Type
BAT 62-07W
Marking Ordering Code
62s
Q62702-A1198
Pin Configuration
1=C1
2=C2
3=A2
4=A1
Package
SOT-343
Maximum Ratings
Parameter
Diode reverse voltage
Forward current
Total power dissipation,
T
S
= 103 °C
Junction temperature
Storage temperature
Thermal Resistance
Junction - ambient
1)
Symbol
Value
40
20
100
150
-55 ...+150
Unit
V
mA
mW
°C
V
R
I
F
P
tot
T
j
T
stg
R
thJA
R
thJS
≤
630
≤
470
K/W
Junction - soldering point
Semiconductor Group
Semiconductor Group
1
1
Sep-07-1998
1998-11-01
BAT 62-07W
Electrical Characteristics
at
T
A
= 25°C, unless otherwise specified.
Parameter
Symbol
Values
min.
DC characteristics
Reverse current
typ.
-
0.58
max.
10
1
Unit
I
R
V
F
-
-
µA
V
V
R
= 40 V
Forward voltage
I
F
= 2 mA
AC characteristics
Diode capacitance
C
T
C
C
R
0
L
s
-
-
-
-
0.35
0.1
225
2
0.6
-
-
-
pF
V
R
= 0 V,
f
= 1 MHz
Case capacitance
f
= 1 MHz
Differential resistance
kΩ
nH
V
R
= 0 ,
f
= 10 kHz
Series inductance chip to ground
Semiconductor Group
Semiconductor Group
2
2
Sep-07-1998
1998-11-01
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