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BAT63-07WE6811

Description
SILICON, LOW BARRIER SCHOTTKY, MIXER DIODE
CategoryDiscrete semiconductor    diode   
File Size432KB,4 Pages
ManufacturerInfineon
Websitehttp://www.infineon.com/
Download Datasheet Parametric View All

BAT63-07WE6811 Overview

SILICON, LOW BARRIER SCHOTTKY, MIXER DIODE

BAT63-07WE6811 Parametric

Parameter NameAttribute value
MakerInfineon
Parts packaging codeSOT
package instructionR-PDSO-G4
Contacts4
Reach Compliance Codecompli
ECCN codeEAR99
ConfigurationSEPARATE, 2 ELEMENTS
Maximum diode capacitance0.85 pF
Diode component materialsSILICON
Diode typeMIXER DIODE
Maximum forward voltage (VF)0.3 V
JESD-30 codeR-PDSO-G4
JESD-609 codee3
Number of components2
Number of terminals4
Maximum operating temperature150 °C
Minimum operating temperature-55 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Maximum power dissipation0.1 W
Certification statusNot Qualified
Maximum repetitive peak reverse voltage8 V
surface mountYES
technologySCHOTTKY
Terminal surfaceMATTE TIN
Terminal formGULL WING
Terminal locationDUAL
Schottky barrier typeLOW BARRIER
BAT63-07WE6811
Silicon Schottky Diode
Low barrie diode for detectors up to GHz
frequencies
For high-speed switching applications
Zero bias detector diode



BAT63-07W
4
3
D 1
D 2
1
2
ESD
:
E
lectro
s
tatic
d
ischarge sensitive device, observe handling precaution!
Type
BAT63-07WE6811
Maximum Ratings
Parameter
Diode reverse voltage
Forward current
Total power dissipation
Junction temperature
Storage temperature
Thermal Resistance
Parameter
Junction - soldering point
1)
1
For
Package
SOT343
Configuration
parallel pair
L
S
(nH)
Marking
1.6
63s
Symbol
V
R
I
F
P
tot
T
j
T
stg
Symbol
R
thJS
Value
8
100
100
150
-55 ... 150
Unit
V
mA
mW
°C
calculation of
R
thJA
please refer to Application Note Thermal Resistance
1


T
S
103 °C
Value
470
Unit
K/W
Jul-24-2002
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