BAT64...
Silicon Schottky Diodes
•
For low-loss, fast-recovery, meter protection,
bias isolation and clamping application
•
Integrated diffused guard ring
•
Low forward voltage
BAT64
3
BAT64-02V
BAT64-02W
BAT64-04
BAT64-04W
3
BAT64-05
BAT64-05W
3
BAT64-06
BAT64-06W
3
1
2
D 1
D 2
D 1
D 2
D 1
D 2
1
2
1
2
1
2
1
2
BAT64-07
4
3
D 1
D 2
1
2
ESD
:
E
lectro
s
tatic
d
ischarge sensitive device, observe handling precaution!
Type
BAT64
BAT64-02V*
BAT64-02W
BAT64-04
BAT64-04W
BAT64-05
BAT64-05W
BAT64-06
BAT64-06W
BAT64-07
Package
SOT23
SC79
SCD80
SOT 23
SOT323
SOT23
SOT323
SOT23
SOT323
SOT143
Configuration
single
single
single
series
series
common cathode
common cathode
common anode
common anode
parallel pair
L
S
(nH)
1.8
0.6
0.6
1.8
1.4
1.8
1.4
1.8
1.4
2
Marking
63s
t
64
64s
64s
65s
65s
66s
66s
67s
* Preliminary data
1
Mar-10-2004
BAT64...
Maximum Ratings
at
T
A
= 25°C, unless otherwise specified
Parameter
Diode reverse voltage
Forward current
Non-repetitive peak surge forward current
(t
≤
10ms)
Average forward current (50/60Hz, sinus)
Total power dissipation
BAT64,
T
S
≤
86°C
BAT64-02V, BAT64-02W,
T
S
≤
121°C
BAT64-04, BAT64-06, BAT64-07,
T
S
≤
61°C
BAT64-04W, BAT64-06W,
T
S
≤
111°C
BAT64-05,
T
S
≤
36°C
BAT64-05W,
T
S
≤
104°C
Junction temperature
Storage temperature
Thermal Resistance
Parameter
Junction - soldering point
1)
BAT64
BAT64-02V, BAT64-02W
BAT64-04, BAT64-06, BAT64-07
BAT64-04W, BAT64-06W
BAT64-05
BAT64-05W
1
For
Symbol
V
R
I
F
I
FSM
I
FAV
P
tot
Value
40
250
800
120
Unit
V
mA
mW
250
250
250
250
250
250
150
-55 ... 150
°C
T
j
T
stg
Symbol
R
thJS
Value
≤
255
≤
115
≤
355
≤
155
≤
455
≤
185
Unit
K/W
calculation of
R
thJA
please refer to Application Note Thermal Resistance
2
Mar-10-2004
BAT64...
Electrical Characteristics
at
T
A
= 25°C, unless otherwise specified
Symbol
Values
Parameter
min.
DC Characteristics
Breakdown voltage
I
(BR)
= 10 µA
Reverse current
V
R
= 30 V
V
R
= 30 V,
T
A
= 85 °C
Forward voltage
I
F
= 1 mA
I
F
= 10 mA
I
F
= 30 mA
I
F
= 100 mA
AC Characteristics
Diode capacitance
V
R
= 1 V,
f
= 1 MHz
Reverse recovery time
I
F
= 10 mA,
I
R
= 10 mA, measured
I
R
= 1 mA ,
R
L
= 100
Ω
t
rr
-
-
5
ns
C
T
-
4
6
pF
Unit
max.
-
V
µA
typ.
-
V
(BR)
I
R
40
-
-
V
F
270
310
370
500
-
-
320
385
440
570
2
200
mV
350
430
520
750
3
Mar-10-2004
BAT64...
Diode capacitance
C
T
=
ƒ
(V
R
)
f
= 1MHz
10
C
T
pF
8
7
6
5
4
3
2
1
0
0
10
20
V
V
R
30
10
-3
0
10
20
V
R
V
30
10
-2
10
-1
25 C
10
0
BAT 64...
EHB00059
Reverse current
I
R
=
ƒ
(V
R
)
T
A
= Parameter
BAT 64...
EHB00058
Ι
R
10
2
µ
A
10
1
T
A
= 125 C
85 C
Forward current
I
F
=
ƒ
(V
F
)
T
A
= Parameter
BAT 64...
EHB00057
Forward current
I
F
=
ƒ
(T
S
)
BAT64W
300
Ι
F
10
mA
2
mA
10
1
T
A
= -40
25
85
125
C
C
C
C
200
I
F
150
100
50
0
0
10
0
10
-1
10
-2
0
0.5
V
V
F
1
15
30
45
60
75
90 105 120
°C
150
T
S
4
Mar-10-2004
BAT64...
Forward current
I
F
=
ƒ
(T
S
)
BAT64-02V, BAT64-02W
300
Forward current
I
F
=
ƒ
(T
S
)
BAT64-04, BAT64-06, BAT64-07
300
mA
mA
200
200
I
F
150
I
F
150
100
100
50
50
0
0
90 105 120
°C
0
0
15
30
45
60
75
150
15
30
45
60
75
90 105 120
°C
150
T
S
T
S
Forward current
I
F
=
ƒ
(T
S
)
BAT64-04W, BAT64-06W
300
Forward current
I
F
=
ƒ
(T
S
)
BAT64-05
300
mA
mA
200
200
I
F
150
I
F
150
100
100
50
50
0
0
90 105 120
°C
0
0
15
30
45
60
75
150
15
30
45
60
75
90 105 120
°C
150
T
S
T
S
5
Mar-10-2004
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