BAT 64-07
Silicon Schottky Diodes
Preliminary data
• For low-loss, fast-recovery, meter protection,
bias isolation and clamping applications
• Integrated diffused guard ring
• Low forward voltage
ESD: ElectroStatic Discharge
sensitive device, observe handling precautions!
Type
Marking Ordering Code
Pin Configuration
BAT 64-07
67s
Q62702-A964
Package
1 = C1 2 = C2 3 = A2 4 = A1 SOT-143
Maximum Ratings
Parameter
Diode reverse voltage
Forward current
Symbol
Values
40
250
120
800
mW
250
150
- 55 ... + 150
≤
495
≤
355
°C
Unit
V
mA
V
R
I
F
Average forward current (50/60Hz, sinus)
I
FAV
Surge forward current (t
≤ 10ms)
I
FSM
Total Power dissipation
P
tot
T
j
T
stg
R
thJA
R
thJS
T
S
= 61 °C
Junction temperature
Storage temperature
Thermal Resistance
Junction ambient
1)
K/W
Junction - soldering point
1) Package mounted on epoxy pcb 40mm x 40mmm x 1.5mm / 0.5cm
2
Cu
Semiconductor Group
1
Jun-27-1996
BAT 64-07
Electrical Characteristics
at
T
A
=25°C, unless otherwise specified
Parameter
Symbol
min.
DC characteristics
Reverse current
Values
typ.
max.
Unit
I
R
-
-
-
-
320
385
440
570
2
200
350
430
520
750
µA
V
R
= 25 V,
T
A
= 25 °C
V
R
= 25 V,
T
A
= 85 °C
Forward voltage
V
F
-
-
-
-
mV
V
I
F
= 1 mA
I
F
= 10 mA
I
F
= 30 mA
I
F
= 100 mA
AC Characteristics
Diode capacitance
C
T
-
4
6
pF
V
R
= 1 V,
f
= 1 MHz
Semiconductor Group
2
Jun-27-1996
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