Silicon Schottky Diode
BAT 65
Features
• Low-power Schottky rectifier diode
• For low-loss, fast-recovery rectification,
meter protection, bias isolation and
clamping purposes
• Miniature plastic package for surface
mounting (SMD)
Type
BAT 65
1)
Marking
White/C
Ordering Code
1
Q62702-A990
C
Pin Configuration
2
A
Package
1)
SOD-123
Dimensions see page 313.
Maximum Ratings
Parameter
Reverse voltage
Forward current
Average forward current,
f
= 50 Hz
Surage forward current,
t
≤
10 ms
Total power dissipation,
T
S
≤
100
°C
Junction temperature
Storage temperature range
Symbol
V
R
I
F
I
FAV
I
FSM
P
tot
T
j
T
stg
Limit Values
40
750
500
2.5
600
150
−
55 … + 150
Unit
V
mA
mA
A
mW
°C
°C
Semiconductor Group
1
05.96
BAT 65
Thermal Resistance
Parameter
Junction - soldering point
Junction to ambient
1)
1)
Symbol
Limit Values
≤
80
≤
150
Unit
K/W
K/W
R
thJS
R
thJA
Package mounted on epoxy PCB 40 mm
×
40 mm
×
1.5 mm/6 cm
2
Cu.
Electrical Characteristics
T
A
= 25
°C,
unless otherwise specified.
Parameter
Reverse current
V
R
= 30 V
V
R
= 30 V,
T
A
= 65
°C
Forward voltage
I
F
= 10 mA
I
F
= 100 mA
I
F
= 250 mA
I
F
= 750 mA
Diode capacitance
V
R
= 10 V,
f
= 1 MHz
Symbol
Limit Values
min.
typ.
–
–
0.305
0.38
0.44
0.580
8.4
max.
µA
–
–
50
900
V
–
–
–
–
0.40
–
0.70
–
pF
–
12
Unit
I
R
V
F
C
T
Semiconductor Group
2
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