BAT68...
Silicon Schottky Diodes
For mixer applications in the VHF / UHF range
For high-speed switching applications
BAT68
3
BAT68-02L
BAT68-04
BAT68-04W
3
BAT68-05
BAT68-05W
3
BAT68-06
BAT68-06W
3
1
2
D 1
D 2
D 1
D 2
D 1
D 2
1
2
1
2
1
2
1
2
BAT68-07
BAT68-07W
4
3
BAT68-08S
6
5
4
BAT68-09S
6
5
4
D 1
D 1
D 2
D 2
D 3
D 1
D 2
1
2
1
2
3
1
2
3
ESD
:
E
lectro
s
tatic
d
ischarge sensitive device, observe handling precaution!
Type
BAT68
BAT68-02L*
BAT68-04
BAT68-04W
BAT68-05
BAT68-05W
BAT68-06
BAT68-06W
BAT68-07
BAT68-07W
BAT68-08S
BAT68-09S*
* Preliminary Data
Package
SOT23
TSLP-2-1
SOT23
SOT323
SOT23
SOT323
SOT23
SOT323
SOT143
SOT343
SOT363
SOT363
Configuration
single
single, leadless
series
series
common cathode
common cathode
common anode
common anode
parallel pair
parallel pair
parallel triple
parallel pair, high isolation
L
S
(nH)
1.8
0.4
1.8
1.4
1.8
1.4
1.8
1.4
2
1.6
1.4
1.6
Marking
83s
83
84s
84s
85s
85s
86s
86s
87s
87s
83s
89s
1
Feb-03-2003
BAT68...
Maximum Ratings
at
T
A
= 25°C, unless otherwise specified
Parameter
Diode reverse voltage
Forward current
Total power dissipation
BAT68-02L,
T
S
BAT68,
T
S
77°C
114°C
61°C
92°C
Symbol
V
R
I
F
P
tot
Value
8
130
150
150
150
150
150
150
150
-55 ... 150
Unit
V
mA
mW
Junction temperature
Storage temperature
Thermal Resistance
Parameter
Junction - soldering point
1)
BAT68
BAT68-02L
BAT68-04, BAT68-06, BAT68-07
BAT68-04W-BAT68-06W, BAT68-08S
BAT68-05
BAT68-07W
BAT68-09S
1
For
calculation of
R
thJA
please refer to Application Note Thermal Resistance
2
BAT68-07W,
T
S
BAT68-05,
T
S
46°C
89°C
BAT68-04W/-06W/-08S/-09S,
T
S
BAT68-04, BAT68-06, BAT68-07,
T
S
T
j
T
stg
°C
Symbol
R
thJS
Value
490
240
590
390
690
410
tbd
Unit
K/W
Feb-03-2003
BAT68...
Electrical Characteristics
at
T
A
= 25°C, unless otherwise specified
Parameter
Symbol
Values
min.
DC Characteristics
Breakdown voltage
I
(BR)
= 10 µA
Reverse current
V
R
= 1 V
V
R
= 1 V,
T
A
= 60 °C
Forward voltage
I
F
= 1 mA
I
F
= 10 mA
V
F
-
340
318
390
340
500
I
R
-
-
-
-
0.1
1.2
mV
µA
V
(BR)
8
-
-
V
typ.
max.
Unit
AC Characteristics
Diode capacitance
V
R
= 0 ,
f
= 1 MHz
I
F
= 5 mA,
f
= 10 kHz
C
T
R
F
-
-
-
-
1
10
pF
3
Feb-03-2003
Differential forward resistance
BAT68...
Diode capacitance
C
T
=
f
= 1MHz
BAT 68...
f
= 10kHz
EHD07103
C
T
1.0
pF
10
3
r
f
Ω
BAT 68...
EHD07104
10
2
0.5
10
1
0
0
1
2
3
V
V
R
4
10
0
10
-1
10
0
10
1
mA
Ι
F
T
A
= Parameter
BAT 68...
T
A
= Parameter
EHD07102
Ι
R
10
2
µ
A
10
1
Ι
F
T
A
= 150 C
10
2
mA
BAT 68...
10
1
T
A
= -40
25
85
150
C
C
C
C
10
0
85 C
10
0
10
-1
10
-2
25 C
10
-1
10
-3
0
1
2
3
V
V
R
4
10
-2
0.0
0.1
0.2
4
Reverse current
I
R
=
(
V
R
)
Forward current
I
F
=
(
V
F
)
EHD07101
0.3
0.4
0.5 V 0.6
V
F
Feb-03-2003
(
V
R
)
Differential forward resistance
r
f
=
(
I
F
)
10
2
BAT68...
Forward current
I
F
=
BAT68
140
mA
BAT68-02L
140
mA
100
100
I
F
80
I
F
80
60
60
40
40
20
20
0
0
15
30
45
60
75
90 105 120
°C
150
0
0
15
30
45
60
T
S
BAT68-04, BAT68-06, BAT68-07
140
mA
BAT68-04W-BAT68-06W, BAT68-08S
BAT68-09S
140
mA
100
100
I
F
80
I
F
80
60
60
40
40
20
20
0
0
15
30
45
60
75
90 105 120
°C
150
0
0
15
30
45
60
T
S
5
Forward current
I
F
=
(
T
S
)
Forward current
I
F
=
(
T
S
)
Forward current
I
F
=
(
T
S
)
75
90 105 120
°C
150
T
S
(
T
S
)
75
90 105 120
°C
150
T
S
Feb-03-2003
京公网安备 11010802033920号
EEWORLD
