BDX63B-QR-BR1 datasheet, PDF - EEWORLD Datasheet

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BDX63B-QR-BR1: DescriptionPower Bipolar Transistor, 8A I(C), 120V V(BR)CEO, 1-Element, NPN, Silicon, TO-3, Metal, 2 Pin, TO-3, 2 PIN; CategoryDiscrete semiconductor The transistor; File Size553KB，3 Pages; ManufacturerTT Electronics plc; Websitehttp://www.ttelectronics.com/; Environmental Compliance

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BDX63B-QR-BR1 Overview

Power Bipolar Transistor, 8A I(C), 120V V(BR)CEO, 1-Element, NPN, Silicon, TO-3, Metal, 2 Pin, TO-3, 2 PIN

BDX63B-QR-BR1 Parametric

Parameter Name	Attribute value
Is it Rohs certified?	conform to
Maker	TT Electronics plc
package instruction	TO-3, 2 PIN
Reach Compliance Code	compli
ECCN code	EAR99
Shell connection	COLLECTOR
Maximum collector current (IC)	8 A
Collector-emitter maximum voltage	120 V
Configuration	SINGLE
Minimum DC current gain (hFE)	1000
JEDEC-95 code	TO-3
JESD-30 code	O-MBFM-P2
JESD-609 code	e1
Number of components	1
Number of terminals	2
Package body material	METAL
Package shape	ROUND
Package form	FLANGE MOUNT
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Polarity/channel type	NPN
Certification status	Not Qualified
surface mount	NO
Terminal surface	TIN SILVER COPPER
Terminal form	PIN/PEG
Terminal location	BOTTOM
Maximum time at peak reflow temperature	NOT SPECIFIED
transistor applications	SWITCHING
Transistor component materials	SILICON
Nominal transition frequency (fT)	7 MHz

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NPN EPITAXIAL BASE

DARLINGTON POWER TRANSISTOR

BDX63 / BDX63A / BDX63B / BDX63C

Hermetic TO3 Metal Package

Ideally Suited for General Purpose Switching

and Amplifier Applications

Screening Options Available

ABSOLUTE MAXIMUM RATINGS

(TA = 25°C unless otherwise stated)

BDX63

VCEO

VCBO

VEBO

ICM

Ptot

Tstg

Drain – Source Voltage

Gate – Source Voltage

Continuous Drain Current, Per Device

Collector Current

Collector Current (peak)

Base Current

Total Power Dissipation @ TC = 25°C

Junction Temperature Range

Storage Temperature Range

60V

80V

BDX63A

80V

100V

12A

150mA

90W

-55 to +200°C

-65 to +200°C

BDX63B

100V

120V

BDX63C

120V

140V

THERMAL PROPERTIES

Symbols

RθJC

Parameters

Thermal Resistance, Junction To Case

Max.

1.94

Units

°C/W

Semelab Limited reserves the right to change test conditions, parameter limits and package dimensions without notice.

Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab

assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that

datasheets are current before placing orders.

Semelab Limited

Telephone: +44 (0) 1455 556565

Fax: +44 (0) 1455 552612

Coventry Road, Lutterworth, Leicestershire, LE17 4JB

Email:

sales@semelab-tt.com

Website:

http://www.semelab-tt.com

Document Number: 10935

Issue: 1

Page: 1 of 3

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