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BAV170LT1

Description
0.2 A, 2 ELEMENT, SILICON, SIGNAL DIODE
CategoryDiscrete semiconductor    diode   
File Size36KB,2 Pages
ManufacturerLRC
Websitehttp://www.lrc.cn
Download Datasheet Parametric View All

BAV170LT1 Overview

0.2 A, 2 ELEMENT, SILICON, SIGNAL DIODE

BAV170LT1 Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerLRC
Reach Compliance Codeunknow
ECCN codeEAR99
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)0.9 V
JESD-609 codee0
Maximum non-repetitive peak forward current0.5 A
Maximum operating temperature150 °C
Maximum repetitive peak reverse voltage70 V
Maximum reverse recovery time0.003 µs
surface mountYES
Terminal surfaceTin/Lead (Sn/Pb)
LESHAN RADIO COMPANY, LTD.
Monolithic Dual Switching Diode
This switching diode has the following features:
.
Low Leakage Current Applications
.
Medium Speed Switching Times
.
Available in 8 mm Tape and Reel
Use BAV170LT1 to order the 7 inch/3,000 unit reel
Use BAV170LT3 to order the 13 inch/10,000 unit reel
1
2
1
ANODE
3
CATHODE
2
ANODE
BAV170LT1
3
CASE 318–08, STYLE 9
SOT– 23 (TO–236AB)
MAXIMUM RATINGS
Rating
Reverse Voltage
Forward Current
Peak Forward Surge Current
Symbol
V
R
I
F
I
FM(surge)
Symbol
P
D
Value
70
200
500
Max
225
1.8
Unit
Vdc
mAdc
mAdc
Unit
mW
mW°C
°C/W
mW
mW°C
°C/W
°C
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR- 5 Board
(1)
T
A
= 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Total Device Dissipation
Alumina Substrate
(2)
T
A
= 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature
R
θJA
P
D
556
300
2.4
R
θJA
T
J
, T
stg
417
-55 to +150
DEVICE MARKING
BAV170LT1 = JX
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise noted)
(EACH DIODE)
Characteristic
Symbol
V
(BR)
I
R
C
D
V
F
Min
70
Max
5.0
80
2.0
900
1000
1100
1250
3.0
Unit
Vdc
nAdc
pF
mVdc
OFF CHARACTERISTICS
Reverse Breakdown Voltage (I
(BR)
= 100
µAdc)
Reverse Voltage Leakage Current (V
R
= 70 Vdc)
Reverse Voltage Leakage Current
(V
R
= 70 Vdc, T
J
= 150°C)
Diode Capacitance (V
R
= 0 V, f = 1.0 MHz)
Forward Voltage (I
F
= 1.0 mAdc)
Forward Voltage
(I
F
= 10 mAdc)
Forward Voltage
(I
F
= 50 mAdc)
Forward Voltage
(I
F
= 150 mAdc)
Reverse Recovery Time
R
L
= 100
t
rr
µs
(I
F
= I
R
= 10 mAdc) (Figure 1)
1. FR-5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
G8–1/2

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