DS2430A+R datasheet, PDF - EEWORLD Datasheet

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DS2430A+R: Description256 X 1 1-WIRE SERIAL EEPROM, PBCY3; Categorystorage; File Size692KB，19 Pages; ManufacturerMaxim; Websitehttps://www.maximintegrated.com/en.html

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DS2430A+R Overview

256 X 1 1-WIRE SERIAL EEPROM, PBCY3

DS2430A+R Parametric

Parameter Name	Attribute value
Number of functions	1
Number of terminals	3
Maximum operating temperature	85 Cel
Minimum operating temperature	-40 Cel
Maximum supply/operating voltage	6 V
Minimum supply/operating voltage	2.8 V
Rated supply voltage	5 V
maximum clock frequency	0.0163 MHz
Processing package description	TO-92, 3-PIN
state	ACTIVE
Craftsmanship	MOS
packaging shape	round
Package Size	cylindrical
Terminal form	THROUGH-hole
terminal coating	tin lead
Terminal location	BOTTOM
Packaging Materials	Plastic/Epoxy
Temperature level	INDUSTRIAL
memory width	1
organize	256 × 1
storage density	256 deg
operating mode	ASYNCHRONOUS
Number of digits	256 words
Number of digits	256
Memory IC type	1-wire serial electrically erasable read-only memory
serial parallel	serial
Maximum TWC of write cycle	10 ms

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19-5236; Rev 2/12

FEATURES



256-bit Electrically Erasable Programmable

Read Only Memory (EEPROM) plus 64-bit

one-time programmable application register

Unique, factory-lasered and tested 64-bit

registration number (8-bit family code + 48-bit

serial number + 8-bit CRC tester) assures

absolute identity because no two parts are alike

Built-in multidrop controller ensures

compatibility with other MicroLAN products

EEPROM organized as one page of 32 bytes

for random access

Reduces control, address, data, and power to a

single data pin

Directly connects to a single port pin of a

microprocessor and communicates at up to

15.3kbits per second

8-bit family code specifies DS2430A

communication requirements to reader

Presence detector acknowledges when reader

first applies voltage

Low cost TO-92 or 6-pin TSOC and UCSP

surface mount package

Reads and writes over a wide voltage range of

2.8V to 5.25V from -40°C to +85°C

PIN ASSIGNMENT

TO-92

DALLAS

DS2430A

TSOC PACKAGE

1 2

ORDERING INFORMATION

1 2 3

BOTTOM VIEW

NOTE:

The leads of TO-92 packages on tape and reel are formed

to approximately 100-mil (2.54mm) spacing. For details see the

Package Information.

PIN DESCRIPTION

Pin 1

Pin 2

Pin 3

Pin 4

Pin 5

Pin 6

TO-92

Ground

Data

––––

PART

TEMP RANGE PIN-PACKAGE

DS2430A+

-40°C to +85°C 3 TO-92

DS2430A+T&R

-40°C to +85°C 3 TO-92 (2k pcs)

DS2430AP+

-40°C to +85°C 6 TSOC

DS2430AP+T&R

-40°C to +85°C 6 TSOC (4k pcs)

+Denotes a lead(Pb)-free/RoHS-compliant package.

T&R = Tape and reel.

TSOC

Ground

Data

1 of 19

TOP VIEW

3.7mm x 4.0mm x 1.5mm

SIDE VIEW

DS2430A

256-Bit 1-Wire EEPROM

1-Wire is a registered trademark of Maxim Integrated Products, Inc.

Each DS2430A contains a unique ROM code that is 64 bits long. The first 8 bits are a 1-Wire family code

(14h). The next 48 bits are a unique serial number. The last 8 bits are a CRC of the first 56 bits. (Figure

3). The 1-Wire CRC is generated using a polynomial generator consisting of a shift register and XOR

gates as shown in Figure 4. The polynomial is X

+ X

+ 1. Additional information about the

1-Wire CRC is available in

Application Note 27.

The shift register bits are initialized to 0. Then starting

with the least significant bit of the family code, one bit at a time is shifted in. After the 8

bit of the

family code has been entered, then the serial number is entered. After the 48

bit of the serial number has

been entered, the shift register contains the CRC value. Shifting in the 8 bits of CRC should return the

shift register to all 0s.

64-BIT LASERED ROM

The block diagram in Figure 1 shows the relationships between the major control and memory sections of

the DS2430A. The DS2430A has four main data components: 1) 64-bit lasered ROM, 2) 256-bit

EEPROM data memory with scratchpad, 3) 64-bit one-time programmable application register with

scratchpad and 4) 8-bit status memory. The hierarchical structure of the 1-Wire protocol is shown in

Figure 2. The bus master must first provide one of the four ROM Function Commands: 1) Read ROM, 2)

Match ROM, 3) Search ROM, 4) Skip ROM. The protocol required for these ROM Function Commands

is described in Figure 8. After a ROM Function Command is successfully executed, the memory

functions become accessible and the master can provide any one of the four memory function commands.

The protocol for these memory function commands is described in Figure 6. All data is read and written

least significant bit first.

2 of 19

OVERVIEW

The DS2430A 256-bit 1-Wire® EEPROM identifies and stores relevant information about the product to

which it is associated. This lot or product specific information can be accessed with minimal interface, for

example a single port pin of a microcontroller. The DS2430A consists of a factory-lasered registration

number that includes a unique 48-bit serial number, an 8-bit CRC, and an 8-bit Family Code (14h) plus

256 bits of user-programmable EEPROM and a 64-bit one-time programmable application register. The

power to read and write the DS2430A is derived entirely from the 1-Wire communication line. Data is

transferred serially via the 1-Wire protocol, which requires only a single data lead and a ground return.

The 48-bit serial number that is factory-lasered into each DS2430A provides a guaranteed unique identity

that allows for absolute traceability. The TO-92 and TSOC packages provide a compact enclosure that

allows standard assembly equipment to handle the device easily for attachment to printed circuit boards

or wiring. Typical applications include storage of calibration constants, board identification, and product

revision status.

DESCRIPTION

DS2430A

The Memory Function Flow Chart (Figure 6) describes the protocols necessary for accessing the different

memory sections of the DS2430A. An example is shown later in this document.

After issuing the Write Scratchpad command, the master must first provide a 1-byte address, followed by

the data to be written to the scratchpad for the data memory. The DS2430A automatically increments the

address after every byte it receives. After having received a data byte for address 1Fh, the address counter

wraps around to 00h for the next byte and writing continues until the master sends a Reset Pulse.

This command is used to verify data previously written to the scratchpad before it is copied into the final

storage EEPROM memory. After issuing the Read Scratchpad command, the master must provide the 1-

byte starting address from where data is to be read. The DS2430A automatically increments the address

after every byte read by the master. After the data at address 1Fh has been read, the address counter wraps

around to 00h for the next byte and reading continues until the master sends a Reset Pulse.

WRITE SCRATCHPAD [0Fh]

READ SCRATCHPAD [AAh]

MEMORY FUNCTION COMMANDS

5 of 19

DS2430A MEMORY MAP

Figure 5

The memory of the DS2430A consists of three separate sections, called data memory, application

intermediate storage area called scratchpad that acts as a buffer when writing to the device. The data

memory can be read and written as often as desired. The application register, however, is one-time

programmable only. Once the application register is programmed, it is automatically write protected. The

status register indicates whether the application register is already locked or whether it is still available

for storing data. As long as the application register is unprogrammed, the status register reads FFh.

Copying data from the register scratchpad to the application register clears the 2 least significant bits of

the status register, yielding an FCh the next time one reads the status register.

MEMORY

DS2430A

DS2430A+R Related Products

	DS2430A+R	DS2430A_12	DS2430A	DS2430A+T	DS2430AP+R	DS2430AP+T
Description	256 X 1 1-WIRE SERIAL EEPROM, PBCY3	256 X 1 1-WIRE SERIAL EEPROM, PBCY3	256 X 1 1-WIRE SERIAL EEPROM, PBCY3	256 X 1 1-WIRE SERIAL EEPROM, PBCY3	256 X 1 1-WIRE SERIAL EEPROM, PBCY3	256 X 1 1-WIRE SERIAL EEPROM, PBCY3
Number of functions	1	1	1	1	1	1
Number of terminals	3	3	3	3	3	3
Maximum operating temperature	85 Cel	85 Cel	85 °C	85 Cel	85 Cel	85 Cel
Minimum operating temperature	-40 Cel	-40 Cel	-40 °C	-40 Cel	-40 Cel	-40 Cel
Terminal form	THROUGH-hole	THROUGH-hole	THROUGH-HOLE	THROUGH-hole	THROUGH-hole	THROUGH-hole
Terminal location	BOTTOM	BOTTOM	BOTTOM	BOTTOM	BOTTOM	BOTTOM
Temperature level	INDUSTRIAL	INDUSTRIAL	INDUSTRIAL	INDUSTRIAL	INDUSTRIAL	INDUSTRIAL
memory width	1	1	1	1	1	1
organize	256 × 1	256 × 1	256X1	256 × 1	256 × 1	256 × 1
Maximum supply/operating voltage	6 V	6 V	-	6 V	6 V	6 V
Minimum supply/operating voltage	2.8 V	2.8 V	-	2.8 V	2.8 V	2.8 V
Rated supply voltage	5 V	5 V	-	5 V	5 V	5 V
maximum clock frequency	0.0163 MHz	0.0163 MHz	-	0.0163 MHz	0.0163 MHz	0.0163 MHz
Processing package description	TO-92, 3-PIN	TO-92, 3-PIN	-	TO-92, 3-PIN	TO-92, 3-PIN	TO-92, 3-PIN
state	ACTIVE	ACTIVE	-	ACTIVE	ACTIVE	ACTIVE
Craftsmanship	MOS	MOS	-	MOS	MOS	MOS
packaging shape	round	round	-	round	round	round
Package Size	cylindrical	cylindrical	-	cylindrical	cylindrical	cylindrical
terminal coating	tin lead	tin lead	-	tin lead	tin lead	tin lead
Packaging Materials	Plastic/Epoxy	Plastic/Epoxy	-	Plastic/Epoxy	Plastic/Epoxy	Plastic/Epoxy
storage density	256 deg	256 deg	-	256 deg	256 deg	256 deg
operating mode	ASYNCHRONOUS	ASYNCHRONOUS	-	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS
Number of digits	256	256	-	256	256	256
Memory IC type	1-wire serial electrically erasable read-only memory	1-wire serial electrically erasable read-only memory	-	1-wire serial electrically erasable read-only memory	1-wire serial electrically erasable read-only memory	1-wire serial electrically erasable read-only memory
serial parallel	serial	serial	-	serial	serial	serial
Maximum TWC of write cycle	10 ms	10 ms	-	10 ms	10 ms	10 ms

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