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BAV19WS THRU BAV21WS
SMALL SIGNAL DIODES
SOD-323
FEATURES
♦
Silicon Epitaxial Planar Diodes
♦
For general purpose
♦
These diodes are also available in other case styles
including: the DO-35 case with the type designations
BAV19 to BAV21, the Mini-MELF case with the type
designations BAV100 to BAV103, the SOT-23 case with
the type designation BAS19 - BAS21 and the SOD-123
case with the type designation BAV19W-BAV21W.
.012 (0.3)
.112 (2.85)
.100 (2.55)
.076 (1.95)
.065 (1.65)
Cathode Mark
Top View
max. .049 (1.25)
max. .004 (0.1)
min. .010 (0.25)
max. .006 (0.15)
.059 (1.5)
.043 (1.1)
MECHANICAL DATA
Case:
SOD-323 Plastic Case
Weight:
approx. 0.004 g
Marking Code:
BAV19WS=A8
BAV20WS=A81
BAV21WS=A82
Dimensions are in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25°C ambient temperature unless otherwise specified.
SYMBOLS
VALUE
UNITS
Continuous Reverse Voltage
BAV19WS
BAV20WS
BAV21WS
BAV19WS
BAV20WS
BAV21WS
V
R
V
R
V
R
V
RRM
V
RRM
V
RRM
I
F
100
150
200
120
200
250
250
1)
200
1)
Volts
Volts
Volts
Volts
Volts
Volts
mA
Repetitive Peak Reverse Voltage
Forward DC Current at T
amb
= 25 °C
Rectified Current (Average)
Half Wave Rectification with Resist. Load
at Tamb = 25 °C and f
≥
50 Hz
Repetitive Peak Forward Current
at f
≥
50 Hz,
Θ
= 180 °, T
amb
= 25 °C
Surge Forward Current at t < 1 s, Tj = 25 °C
Power Dissipation at T
amb
= 25 °C
Junction Temperature
Storage Temperature Range
NOTES:
(1) Valid provided that electrodes are kept at ambient temperature
I
o
mA
I
FRM
I
FSM
P
tot
T
j
T
S
625
1)
1
200
1)
150
1)
–65 to + 150
1)
mA
Amps
mW
°C
°C
12/11/98
BAV19WS THRU BAV21WS
ELECTRICAL CHARACTERISTICS
Ratings at 25°C ambient temperature unless otherwise specified.
SYMBOL
MIN.
TYP.
MAX.
UNIT
Forward voltage at I
F
= 100 mA
at I
F
= 200mA
Leakage Current
at V
R
= 100 V
at V
R
= 100 V, Tj = 100 °C
at V
R
= 150 V
at V
R
= 150 V, Tj = 100 °C
at V
R
= 200 V
at V
R
= 200 V, Tj = 100 °C
Dynamic Forward Resistance
at I
F
= 10 mA
Capacitance
at V
R
= 0, f = 1 MHz
Reverse Recovery Time
from I
F
= 30 mA through I
R
= 30 mA to
I
R
= 3 mA; R
L
= 100Ω
Thermal Resistance
Junction to Ambient Air
BAV19WS
BAV19WS
BAV20WS
BAV20WS
BAV21WS
BAV21WS
V
F
V
F
I
R
I
R
I
R
I
R
I
R
I
R
r
f
C
tot
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
5
1.5
1.00
1.25
100
15.0
100
15.0
100
15.0
–
–
Volts
Volts
nA
µA
nA
µA
nA
µA
Ω
pF
t
rr
–
–
50
ns
R
thJA
–
–
650
1)
K/W
NOTES:
(1) Valid provided that electrodes are kept at ambient temperature
Analog electronics
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