EGP20A thru EGP20G
Vishay General Semiconductor
Glass Passivated Ultrafast Rectifier
®
Major Ratings and Characteristics
I
F(AV)
V
RRM
I
FSM
t
rr
V
F
T
j
max.
2.0 A
50 V to 400 V
75 A
50 ns
0.95 V, 1.25 V
150 °C
ted*
aten
P
* Glass Encapsulation
technique is covered by
Patent No. 3,996,602,
brazed-lead assembly
to Patent No. 3,930,306
DO-204AC (DO-15)
Features
•
•
•
•
•
•
•
Cavity-free glass-passivated junction
Ultrafast reverse recovery time
Low forward voltage drop
Low leakage current
Low switching losses, high efficiency
High forward surge capability
Solder Dip 260 °C, 40 seconds
Mechanical Data
Case:
DO-204AC, molded epoxy over glass body
Epoxy meets UL-94V-0 Flammability rating
Terminals:
Matte tin plated leads, solderable per
J-STD-002B and JESD22-B102D
E3 suffix for commercial grade, HE3 suffix for high
reliability grade (AEC Q101 qualified)
Polarity:
Color band denotes cathode end
Typical Applications
For use in high frequency rectification and freewheel-
ing application in switching mode converters and
inverters for consumer, computer and Telecommuni-
cation
Maximum Ratings
T
A
= 25 °C unless otherwise specified
Parameter
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current 0.375"
(9.5 mm) lead length at T
A
= 55 °C
Peak forward surge current 8.3 ms single half sine-
wave superimposed on rated load
Operating and storage temperature range
Symbol EGP20A EGP20B EGP20C EGP20D EGP20F EGP20G
V
RRM
V
RMS
V
DC
I
F(AV
)
I
FSM
T
J
,T
STG
50
35
50
100
70
100
150
105
150
2.0
75
- 65 to + 150
200
140
200
300
210
300
400
280
400
Unit
V
V
V
A
A
°C
Document Number 88583
10-Aug-05
www.vishay.com
1
EGP20A thru EGP20G
Vishay General Semiconductor
Electrical Characteristics
T
A
= 25 °C unless otherwise specified
Parameter
Maximum instantaneous
forward voltage
Maximum DC reverse current
at rated DC blocking voltage
Maximum reverse recovery
time
Typical junction capacitance
Test condition
at 2.0 A
T
A
= 25 °C
T
A
= 125 °C
at I
F
= 0.5 A, I
R
= 1.0 A,
I
rr
= 0.25 A
at 4.0 V, 1 MHz
Symbol EGP20A EGP20B EGP20C EGP20D EGP20F EGP20G Unit
V
F
I
R
t
rr
C
J
70
0.95
5.0
100
50
45
1.25
V
µA
ns
pF
Thermal Characteristics
T
A
= 25 °C unless otherwise specified
Parameter
Typical thermal resistance
(1)
Notes:
(1) Thermal resistance from junction to ambient, and from junction to lead at 0.375" (9.5 mm) lead length, P.C.B. mounted
Symbol
R
θJA
R
θJL
EGP20A EGP20B EGP20C EGP20D EGP20F EGP20G
40
15
Unit
°C/W
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2
Document Number 88583
10-Aug-05
EGP20A thru EGP20G
Vishay General Semiconductor
Ratings and Characteristics Curves
(T
A
= 25
°C
unless otherwise noted)
3.0
Instantaneous Reverse Leakage Current (µA)
Average Forward Rectified Current (A)
Resistive or Inductive Load
0.375" (9.5mm) Lead Length
100
EGP20A~EGP20D
10
T
j
= 150 °C
T
j
= 125 °C
1
T
j
= 100 °C
2.0
0.1
1.0
0.01
T
j
= 25 °C
0
0
25
50
75
100
125
150
175
0.001
0
20
40
60
80
100
Ambient Temperature (°C)
Percent of Peak Reverse
Voltage
(%)
Figure 1. Maximum Forward Current Derating Curve
Figure 4. Typical Reverse Leakage Characteristics
90
75
60
Instantaneous Forward Current (A)
Peak Forward Surge Current (A)
T
J
= T
J
max.
8.3ms Single Half Sine-Wave
100
EGP20F~EGP20G
T
j
= 150 °C
10
T
j
= 125 °C
1
T
j
= 100 °C
0.1
T
j
= 25 °C
0.01
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
1.8
45
30
15
0
1
10
100
Number of Cycles at 60 H
Z
Instantaneous Forward
Voltage
(V)
Figure 2. Maximum Non-Repetitive Peak Forward Surge Current
Figure 5. Typical Instantaneous Forward Characteristics
Instantaneous Reverse Leakage Current (µA)
100
Instantaneous Forward Current (A)
EGP20A~EGP20D
T
j
= 150 °C
10
T
j
= 125 °C
1
100
EGP20F~EGP20G
10
T
j
= 150 °C
T
j
= 125 °C
1
T
j
= 100 °C
0.1
T
j
= 25 °C
0.01
T
j
= 100 °C
0.1
T
j
= 25 °C
0.01
0.2
0.4
0.6
0.8
1
1.2
0.001
0
20
40
60
80
100
Instantaneous Forward
Voltage
(V)
Percent of Peak Reverse
Voltage
(%)
Figure 3. Typical Instantaneous Forward Characteristics
Figure 6. Typical Reverse Leakage Characteristics
Document Number 88583
10-Aug-05
www.vishay.com
3
EGP20A thru EGP20G
Vishay General Semiconductor
140
120
100
100
80
60
40
20
0
0.1
Transient Thermal Impedance (°C/W)
T
J
= 25°C
f = 1.0 MH
Z
Vsig = 50mVp-p
Junction Capacitance (pF)
10
1
EGP20A - EGP20D
EGP20F & EGP20G
1
10
100
1000
0.1
0.01
0.1
1
10
100
Reverse Voltage (V)
t, Pulse Duration (sec.)
Figure 7. Typical Junction Capacitance
Figure 8. Typical Transient Thermal Impedance
Package outline dimensions in inches (millimeters)
DO-204AC (DO-15)
0.034 (0.86)
0.028 (0.71)
Dia.
1.0 (25.4)
min.
0.300 (7.6)
0.230 (5.8)
0.140 (3.6)
0.104 (2.6)
Dia.
1.0 (25.4)
min.
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Document Number 88583
10-Aug-05
Legal Disclaimer Notice
Vishay
Notice
Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc.,
or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies.
Information contained herein is intended to provide a product description only. No license, express or implied, by
estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's
terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express
or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness
for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.
Customers using or selling these products for use in such applications do so at their own risk and agree to fully
indemnify Vishay for any damages resulting from such improper use or sale.
Document Number: 91000
Revision: 08-Apr-05
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