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BAV70

Description
0.2 A, 2 ELEMENT, SILICON, SIGNAL DIODE
CategoryDiscrete semiconductor    diode   
File Size208KB,2 Pages
ManufacturerFORMOSA
Websitehttp://www.formosams.com/
Environmental Compliance
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BAV70 Overview

0.2 A, 2 ELEMENT, SILICON, SIGNAL DIODE

BAV70 Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerFORMOSA
package instructionPLASTIC PACKAGE-3
Reach Compliance Codeunknown
ECCN codeEAR99
ConfigurationCOMMON CATHODE, 2 ELEMENTS
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
JESD-30 codeR-PDSO-G3
Number of components2
Number of terminals3
Maximum operating temperature150 °C
Minimum operating temperature-55 °C
Maximum output current0.2 A
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)260
Maximum power dissipation0.225 W
Maximum repetitive peak reverse voltage70 V
Maximum reverse recovery time0.006 µs
surface mountYES
Terminal formGULL WING
Terminal locationDUAL
Maximum time at peak reflow temperature30
Base Number Matches1
Formosa MS
B AV 7 0
Description
The BAV70 consists of two diodes in a plastic surface mount package. The diodes are connected in series and the unit is
designed for high-speed switching application in hybrid thick and thin-film circuits.
Package Dimensions
TPU.34)QBDLHF*
Style : Pin1.Anode 2. Anode 3. Cathode
REF.
A
B
C
D
E
F
Millimeter
Min.
Max.
2.70
3.10
2.40
2.80
1.40
1.60
0.35
0.50
0
0.10
0.45
0.55
REF
.
G
H
K
J
L
M
Millimeter
Min.
Max.
1.90 REF.
1.00
1.30
0.10
0.20
0.40
-
0.85
1.15
0C
10 C
Absolute Maximum Ratings at Ta = 25 :
Parameter
Junction Temperature
Storage Temperature
Reverse Voltage
Forward Current
Repetitive Forward Current
Total Power Dissipation
Symbol
Tj
Tstg
Ratings
+150
-65~+150
80
200
500
225
Unit
PD
V
mA
mA
mW
Characteristics
Characteristic
at Ta = 25 :
Symbol
Min.
Max.
Unit
Test Conditions
Reverse Breakdown Voltage
V(BR)
80
-
V
IR=100uA
VF(1)
-
715
mV
IF=1mA
Forward Voltage
VF(2)
-
855
mV
IF=10mA
VF(3)
-
1100
mV
IF=50mA
VF(4)
-
1300
mV
IF=100mA
Reverse Current
IR
-
5
uA
VR=80V
Total Capacitance
CT
1.5
pF
VR=0, f=1MHz
Reverse Recovery Time
Trr
-
15
nS
IF=IR=10mA, RL=100 Ł measured at
IR=1Ma,VR=5V
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