SUFACE MOUNT GENERAL PURPOSE SILICON RECTIFIER
DSR1A THRU DSR1M
Reverse Voltage - 50 to 1000 Volts
Forward Current - 1.0 Ampere
Formosa MS
FEATURES
SOD-123FL
Cathode Band
Top View
2.8
±
0.1
1.3± 0.15
0.10-0.30
Glass passivated device
Ideal for surface mouted applications
Low reverse leakage
Metallurgically bonded construction
High temperature soldering guaranteed:
250 C/10 seconds,0.375
”
(9.5mm) lead length,
5 lbs. (2.3kg) tension
1.8± 0.1
0.6
±
0.25
１．０±
0.2
MECHANICAL DATA
Case
: JEDEC SOD-123FL molded plastic body over
passivated chip
3.7
±
0.2
Dimensions in millimeters
Terminals:
Plated axial leads, solderable per MIL-STD-750,
Method 2026
Polarity:
Color band denotes cathode end
Mounting Position:
Any
Weight
:0.0007 ounce, 0.02 grams
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 C ambient temperature unless otherwise specified.
Single phase half-wave 60Hz,resistive or inductive load,for capacitive load current derate by 20%.
SYMBOLS
MARK
DSR1A
DSR1B
DSR1D
DSR1G
DSR1J
DSR1K
DSR1M
UNITS
VOLTS
VOLTS
VOLTS
Amp
A1
A2
A3
A4
A5
A6
A7
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current
at T
A
=65 C (NOTE 1)
Peak forward surge current
8.3ms single half sine-wave superimposed on
rated load (JEDEC Method) T
L
=25 C
Maximum instantaneous forward voltage at 1.0A
Maximum DC reverse current
at rated DC blocking voltage
T
A
=25 C
T
A
=125 C
V
RRM
V
RMS
V
DC
I
(AV)
50
35
50
100
70
100
200
140
200
400
280
400
1.0
600
420
600
800
560
800
1000
700
1000
I
FSM
V
F
I
R
20.0
1.1
5.0
50.0
4
180
-55 to +150
Amps
Volts
µ
A
pF
K/W
C
Typical junction capacitance (NOTE 2)
C
J
Typical thermal resistance (NOTE 3)
R
θ
JA
Operating junction and storage temperature range T
J
,
T
STG
Note:
1.Averaged over any 20ms period.
2.Measured at 1MHz and applied reverse voltage of 4.0V D.C.
3.Thermal resistance from junction to ambient at 0.375” (9.5mm)lead length,P.C.B. mounted
http://www.formosams.com/
TEL:886-2-22696661
FAX:886-2-22696141
Document ID
Issued Date
2008/02/10
Revised Date
2010/03/10
Revision
B
Page.
2
Page 1
DS-222645
SUFACE MOUNT GENERAL PURPOSE SILICON RECTIFIER
RATINGS AND CHARACTERISTIC CURVES DSR1A THRU DSR1M
Formosa MS
10
9
8
7
6
5
4
3
2
1
FIG.1 --TYPICAL FORWARD CHARACTERISTIC
INSTANTANEOUS FORWARD CURRENT
FIG.2 -- TYPICAL JUNCTION CAPACITANCE
1000
T
J
= 150°C
T
J
= 25°C
m AMPERES
T
J
= 100°C
CAPACITANCE, pF
100
600
700
800
900
1000
1100
0
0
5
10
15
20
25
30
35
40
INSTANTANEOUS FORWARD VOLTAGE,mV
REVERSE VOLTAGE,VOLTS
INSTANTANEOUS REVERSE CURRENT
FIG.3 --
TYPICAL INSTANTANEOUS
REVERSE CHARACTERISTICS
100
T
J
= 150°C
10
T
J
= 125°C
T
J
= 100°C
FIG.4 -- FORWARD DERATING CURVE
AVERAGE FORWARD CURRENT,
AMPERES
1.0
0.8
µ
AMPERES
1
0.6
T
J
= 75°C
T
J
= 50°C
0.4
0.1
0.2
T
J
= 25°C
0.01
0
100
200
300
400
500
600
700
800
900
0
0
25
50
75
100
125
150
175
INSTANTANEOUS REVERSE VOLTAGE,V
AMBIENT TEMPERATURE,
http://www.formosams.com/
TEL:886-2-22696661
FAX:886-2-22696141
Document ID
Issued Date
2008/02/10
Revised Date
2010/03/10
Revision
B
Page.
2
Page 2
DS-222645
Embedded System
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