DISCRETE SEMICONDUCTORS
DATA SHEET
alfpage
M3D049
BB131
VHF variable capacitance diode
Product specification
Supersedes data of 1996 May 03
1998 Sep 15
Philips Semiconductors
Product specification
VHF variable capacitance diode
FEATURES
•
Excellent linearity
•
Very small plastic SMD package
•
C28: 1 pF; ratio: 14.
APPLICATIONS
•
Electronic tuning in satellite tuners
•
Tunable coupling
•
VCO.
DESCRIPTION
The BB131 is a variable capacitance
diode, fabricated in planar
technology, and encapsulated in the
SOD323 very small plastic SMD
package.
Marking code:
P1.
Cathode side indicated by a bar.
MAM130
BB131
handbook, 4 columns
k
a
Fig.1 Simplified outline (SOD323) and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
V
R
I
F
T
stg
T
j
PARAMETER
continuous reverse voltage
continuous forward current
storage temperature
operating junction temperature
−
−
−55
−55
MIN.
MAX.
30
20
+150
+125
V
mA
°C
°C
UNIT
ELECTRICAL CHARACTERISTICS
T
j
= 25
°C
unless otherwise specified.
SYMBOL
I
R
r
s
C
d
PARAMETER
reverse current
diode series resistance
diode capacitance
capacitance ratio
CONDITIONS
V
R
= 30 V; see Fig.3
V
R
= 30 V; T
j
= 85
°C;
see Fig.3
f = 470 MHz; note 1
V
R
= 0.5 V; f = 1 MHz; see Figs 2 and 4
V
R
= 28 V; f = 1 MHz; see Figs 2 and 4
C
d
(
0.5V
)
---------------------
-
C
d
(
28V
)
Note
1. V
R
is the value at which C
d
= 9 pF.
f = 1 MHz
−
−
−
8
0.7
12
MIN.
MAX.
10
200
3
17
1.055
16
UNIT
nA
nA
Ω
pF
pF
1998 Sep 15
2
Philips Semiconductors
Product specification
VHF variable capacitance diode
GRAPHICAL DATA
BB131
MBE872
handbook, full pagewidth
15
Cd
(pF)
10
5
0
10
−1
f = 1 MHz; T
j
= 25
°C
.
1
10
VR (V)
10
2
Fig.2 Diode capacitance as a function of reverse voltage; typical values.
10
3
handbook, halfpage
MLC816
10
3
handbook, halfpage
MLC815
IR
(nA)
(K
−1
)
TC d
10
2
10
4
10
0
50
T j (
o
C)
100
10
5
10
1
1
10
VR (V)
10
2
T
j
= 0 to 85
°C.
Fig.4
Fig.3
Reverse current as a function of junction
temperature; maximum values.
Temperature coefficient of diode
capacitance as a function of
reverse voltage; typical values.
1998 Sep 15
3
Philips Semiconductors
Product specification
VHF variable capacitance diode
PACKAGE OUTLINE
Plastic surface mounted package; 2 leads
BB131
SOD323
A
A1
E
bp
DIMENSIONS (mm are the original dimensions)
UNIT
mm
Note
A
1.1
0.8
A1
max.
+
0.05
−
0.05
bp
0.40
0.25
c
D
0.25
0.10
1. The marking bar indicates the cathode.
OUTLINE
VERSION
SOD323
,
Lp
HE
D
1
2
(1)
Q
c
v
M
A
A
0
1
2 mm
scale
E
HE
Lp
Q
v
0.2
1.8
1.6
1.35
1.15
2.7
2.3
0.45
0.15
0.25
0.15
REFERENCES
IEC
JEDEC
EIAJ
EUROPEAN
PROJECTION
ISSUE DATE
98-09-14
1998 Sep 15
4
Philips Semiconductors
Product specification
VHF variable capacitance diode
DEFINITIONS
Data sheet status
Objective specification
Preliminary specification
Product specification
Limiting values
BB131
This data sheet contains target or goal specifications for product development.
This data sheet contains preliminary data; supplementary data may be published later.
This data sheet contains final product specifications.
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
1998 Sep 15
5
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