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T2500FP

Description
ISOLATED TRIACs THYRISTORS 6 AMPERES RMS 200 thru 800 VOLTS
File Size53KB,4 Pages
ManufacturerMotorola ( NXP )
Websitehttps://www.nxp.com
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T2500FP Overview

ISOLATED TRIACs THYRISTORS 6 AMPERES RMS 200 thru 800 VOLTS

MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by T2500FP/D
Silicon Bidirectional
Triode Thyristors
. . . designed primarily for full-wave ac control applications, such as solid-state relays,
motor controls, heating controls and power supplies; or wherever full-wave silicon
gate controlled solid-state devices are needed. Triac type thyristors switch from a
blocking to a conducting state for either polarity of applied anode voltage with positive
or negative gate triggering.
Blocking Voltage to 800 Volts
All Diffused and Glass Passivated Junctions for Greater Parameter Uniformity and
Stability
Small, Rugged, Isolated Construction for Low Thermal Resistance, High Heat
Dissipation and Durability
T2500FP
Series
ISOLATED TRIACs
THYRISTORS
6 AMPERES RMS
200 thru 800 VOLTS
MT2
G
MT1
CASE 221C-02
STYLE 3
MAXIMUM RATINGS
(TJ = 25°C unless otherwise noted.)
Rating
Repetitive Peak Off-State Voltage(1)
(TJ = –40 to +100°C, Gate Open)
T2500BFP
T2500DFP
T2500MFP
T2500NFP
On-State RMS Current (TC = +80°C)(2)
(Full Cycle Sine Wave 50 to 60 Hz)
Peak Non-repetitive Surge Current
(One Full Cycle, 60 Hz, TC = +80°C)
Circuit Fusing Considerations
(t = 8.3 ms)
Peak Gate Power
(TC = +80°C, Pulse Width = 1
µs)
Average Gate Power
(TC = +80°C, t = 8.3 ms)
Peak Gate Trigger Current (Pulse Width = 10
µs)
RMS Isolation Voltage (TA = 25°C, Relative Humidity
Operating Junction Temperature Range
Storage Temperature Range
IT(RMS)
ITSM
I2t
PGM
PG(AV)
IGTM
VISO
TJ
Tstg
Symbol
VDRM
200
400
600
800
6
60
40
1
0.2
4
1500
–40 to +100
–40 to +150
Amps
Amps
A2s
Watt
Watt
Amps
Volts
°C
°C
Value
Unit
Volts
p
20%)
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case(2)
Case to Sink
Junction to Ambient
Symbol
R
θJC
R
θCS
R
θJA
Max
2.7
2.2(typ)
60
Unit
°C/W
1. VDRM for all types can be applied on a continuous basis. Blocking voltages shall not be tested with a constant current source such that the
voltage ratings of the devices are exceeded.
2. The case temperature reference point for all TC measurements is a point on the center lead of the package as close as possible to the plastic
body.
Motorola Thyristor Device Data
©
Motorola, Inc. 1995
1

T2500FP Related Products

T2500FP T2500MFP T2500NFP T2500DFP T2500BFP
Description ISOLATED TRIACs THYRISTORS 6 AMPERES RMS 200 thru 800 VOLTS ISOLATED TRIACs THYRISTORS 6 AMPERES RMS 200 thru 800 VOLTS ISOLATED TRIACs THYRISTORS 6 AMPERES RMS 200 thru 800 VOLTS ISOLATED TRIACs THYRISTORS 6 AMPERES RMS 200 thru 800 VOLTS ISOLATED TRIACs THYRISTORS 6 AMPERES RMS 200 thru 800 VOLTS
Is it Rohs certified? - incompatible incompatible incompatible incompatible
Maker - Motorola ( NXP ) Motorola ( NXP ) Motorola ( NXP ) Motorola ( NXP )
package instruction - FLANGE MOUNT, R-PSFM-T3 FLANGE MOUNT, R-PSFM-T3 - FLANGE MOUNT, R-PSFM-T3
Reach Compliance Code - unknown unknow unknow unknown
Shell connection - ISOLATED ISOLATED ISOLATED ISOLATED
Configuration - SINGLE SINGLE SINGLE SINGLE
Maximum DC gate trigger current - 25 mA 25 mA 10 mA 25 mA
Maximum DC gate trigger voltage - 2.5 V 2.5 V 2.5 V 2.5 V
Maximum holding current - 30 mA 30 mA 30 mA 30 mA
JESD-30 code - R-PSFM-T3 R-PSFM-T3 R-PSFM-T3 R-PSFM-T3
JESD-609 code - e0 e0 e0 e0
Maximum leakage current - 2 mA 2 mA 2 mA 2 mA
Number of components - 1 1 1 1
Number of terminals - 3 3 3 3
Maximum operating temperature - 100 °C 100 °C 100 °C 100 °C
Minimum operating temperature - -40 °C -40 °C -40 °C -40 °C
Package body material - PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape - RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
Package form - FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT
Peak Reflow Temperature (Celsius) - NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
Certification status - Not Qualified Not Qualified Not Qualified Not Qualified
Maximum rms on-state current - 6 A 6 A 6 A 6 A
Maximum repetitive peak off-state leakage current - 2000 µA 2000 µA - 2000 µA
Off-state repetitive peak voltage - 600 V 800 V 400 V 200 V
surface mount - NO NO NO NO
Terminal surface - Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb)
Terminal form - THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE
Terminal location - SINGLE SINGLE SINGLE SINGLE
Maximum time at peak reflow temperature - NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
Trigger device type - TRIAC TRIAC 4 QUADRANT LOGIC LEVEL TRIAC TRIAC

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