®
T2035-600G
HIGH PERFORMANCE TRIAC
FEATURES
HIGH COMMUTATION (dI/dt)c > 11 A/ms
without snubber
HIGH STATIC dV/dt > 500 V/µs
DESCRIPTION
The T2035-600G triac uses a high performance
SNUBBERLESS
TM
technology.
The part is intended for general purpose
applications using surface mount technology.
A2
A2
A1
G
D
2
PAK
ABSOLUTE RATINGS
(limiting values)
Symbol
V
DRM
V
RRM
I
T(RMS)
I
TSM
Parameter
Repetitive peak off-state voltage
RMS on-state current
(360° conduction angle)
Non repetitive surge peak on-state current
(Tj initial = 25°C)
I
2
t Value (half-cycle, 50 Hz)
Critical rate of rise of on-state current
I
G
= 500 mA
T
stg
T
j
Tl
dI
G
/dt = 1 A/µs.
Non Repetitive
Storage temperature range
Operating junction temperature range
Maximum temperature for soldering during 10s
100
- 40, + 150
- 40, + 125
260
°C
°
C
Tj = 125°C
Tc= 100°C
tp = 8.3ms
tp = 10 ms
I
2
t
dI/dt
tp = 10 ms
Repetitive
F = 50 Hz
Value
600
20
210
200
200
20
A
2
s
A/µs
Unit
V
A
A
January 1998 - Ed: 1D
1/5
T2035-600G
THERMAL RESISTANCES
Symbol
Rth(j-a)
Rth(j-c)
Rth(j-c)
Parameter
Junction to ambiant (S=1cm
2
)
Junction to case for DC
Junction to case for AC 360°conduction angle (F=50Hz)
Value
45
1.5
1.1
Unit
°C/W
°C/W
°
C/W
GATE CHARACTERISTICS
(maximum values)
P
G (AV)
= 1 W P
GM
= 10 W (tp = 20
µs)
ELECTRICAL CHARACTERISTICS
Symbol
I
GT
Test Conditions
V
D
=12V (DC) R
L
=33
Ω
Tj= 25
°
C
Quadrant
I-II-III
MIN
MAX
V
GT
V
GD
I
H
*
I
L
V
TM *
I
DRM
I
RRM
dV/dt *
(dI/dt)c *
V
D
=12V (DC) R
L
=33Ω
V
D
=V
DRM
R
L
=3.3kΩ
I
T
= 500mA
I
G
= 1.2 I
GT
I
TM
= 28A tp= 380µs
V
D
= V
DRM
V
R
= V
RRM
Linear slope up to V
D
=67%V
DRM
Gate open
Without snubber
Gate open
Tj= 25°C
Tj= 125°C
Tj= 25
°
C
Tj = 25°C
Tj= 25°C
Tj= 25
°
C
Tj= 125°C
Tj= 125°C
Tj= 125°C
I-II-III
I-II-III
I-II-III
MAX
MIN
MAX
MAX
MAX
MAX
MAX
MIN
MIN
Sensitivity
2
35
1.3
0.2
35
80
1.5
5
2
500
11
V
V
mA
mA
V
µ
A
mA
V/µs
A/ms
Unit
mA
I
GM
= 4 A (tp = 20
µs)
* For either polarity of electrode A2 voltage with reference to electrode A1.
ORDERING INFORMATION
Add ”-TR” suffix for Tape & Reel shipment
T 20
TRIAC
CURRENT
2/5
®
35 - 600
SENSITIVITY
G
PACKAGE :
G = D
2
PAK
VOLTAGE
T2035-600G
Fig. 1:
Maximum power dissipation versus RMS
on-state current.
Fig. 2:
Correlation between maximum power dissi-
pation and maximum allowable temperatures
(T
amb
and T
case
) for different thermal resistances
heatsink+contact.
P(W)
25
α=180°
Rth=4°C/W
Rth=2°C/W
Rth=1°C/W
Rth=0°C/W
P(W)
25
20
15
10
5
0
0
5
10
15
20
α=30°
α=60°
α=90°
α=120°
Tcase (°C)
100
20
105
15
110
10
5
115
120
I
T(RMS)
(A)
0
0
α=180°
Tamb(°C)
125
20
40
60
80
100
120
140
Fig. 3:
RMS on-state current versus case tem-
perature.
Fig. 4:
Relative variation of thermal impedance
versus pulse duration.
I
T(RMS)
(A)
22
20
18
16
14
12
10
8
6
4
2
0
α=180°
K=[Zth/Rth]
1.00
Zth(j-c)
Zth(j-a)
0.10
Tcase(
°C)
0
25
50
75
100
125
0.01
1E-3
1E-2
1E-1
tp(s)
1E+0
1E+1
1E+2 5E+2
Fig. 5:
Relative variation of gate trigger currentand
holding current versus junction temperature (typi-
cal values).
I
GT
,I
H
[Tj]/I
GT
,I
H
[Tj=25°C]
2.5
2.0
1.5
1.0
0.5
Tj(°C)
0.0
-40
-20
0
20
40
60
80
100
120
140
I
H
I
GT
Fig. 6:
Non repetitive surge peak on-state current
versus number of cycles.
I
TSM
(A)
200
180
160
140
120
100
80
60
40
20
0
1
10
100
1000
Number of cycles
Tj initial=25
°C
F=50Hz
3/5
®
T2035-600G
Fig. 7:
Non repetitive surge peak on-state current
for a sinusoidal pulse with width tp<10ms, and cor-
responding value of I
2
t.
I
TSM
(A),I t(A s)
1000
Tj initial=25°C
Fig. 8:
On-state characteristics(maximum values).
I
TM
(A)
200
Tj max.:
100
Vto=0.87V
Rt=20 mΩ
500
I
TSM
Tj=Tj max.
10
It
200
tp(ms)
100
1
2
5
10
Tj=25°C
V
TM
(V)
1
0.0 0.5 1.0
1.5 2.0 2.5
3.0 3.5
4.0 4.5 5.0
Fig. 9:
Thermal resistance junction to ambient ver-
sus copper surface under tab (Epoxyprinted circuit
board FR4, copper thickness: 35
µ
m).
Rth(j-a) (°C/W)
80
70
60
50
40
30
20
10
0
0
4
8
12
S(Cu) (cm )
16
20
24
28
32
36
40
Fig. 10:
Typical reflow soldering heat profile, either
for mounting on FR4 or metal-backed boards.
T (°C)
250
200
245°C
215°C
150
100
Epoxy FR4
board
50
0
Metal-backed
board
t (s)
0
40
80
120
160
200
240
280
320 360
4/5
®
T2035-600G
PACKAGE MECHANICAL DATA
D
2
PAK
DIMENSIONS
REF.
A
E
L2
C2
Millimeters
Inches
Min. Typ. Max. Min. Typ. Max.
4.30
2.49
0.03
0.70
1.40
0.45
1.21
8.95
10.00
4.88
15.00
1.27
1.40
0.40
0°
8°
0°
0.60 0.017
1.36 0.047
9.35 0.352
10.28 0.393
5.28 0.192
15.85 0.590
1.40 0.050
1.75 0.055
0.016
8°
4.60 0.169
2.69 0.098
0.23 0.001
0.93 0.027
0.055
0.024
0.054
0.368
0.405
0.208
0.624
0.055
0.069
0.181
0.106
0.009
0.037
A
A1
D
L
L3
A1
B2
B
G
A2
2.0 MIN.
FLAT ZONE
V2
C
R
A2
B
B2
C
C2
D
E
G
L
L2
L3
R
V2
Note 1:
Max resin gate protusion = 0.5 mm
FOOT PRINT DIMENSIONS
(in millimeters)
16.90
MARKING
: T2035
600G
10.30
1.30
5.08
3.70
8.90
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsibility for the
consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No
license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned
in this publication are subject to change withoutnotice. This publication supersedes and replaces all information previously supplied.
SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express
written approval of SGS-THOMSON Microelectronics.
©
1998 SGS-THOMSON Microelectronics - Printed in Italy - All rights reserved.
SGS-THOMSON Microelectronics GROUP OF COMPANIES
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®
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