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1N4006SA1G

Description
Rectifier Diode, 1 Element, 1A, 800V V(RRM), Silicon,
CategoryDiscrete semiconductor    diode   
File Size193KB,4 Pages
ManufacturerTaiwan Semiconductor
Websitehttp://www.taiwansemi.com/
Environmental Compliance
Download Datasheet Parametric View All

1N4006SA1G Overview

Rectifier Diode, 1 Element, 1A, 800V V(RRM), Silicon,

1N4006SA1G Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerTaiwan Semiconductor
package instructionO-PALF-W2
Reach Compliance Codecompli
ECCN codeEAR99
Other featuresHIGH RELIABILITY, LOW POWER LOSS
Shell connectionISOLATED
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
JESD-30 codeO-PALF-W2
JESD-609 codee3
Number of components1
Number of terminals2
Maximum operating temperature150 °C
Minimum operating temperature-55 °C
Maximum output current1 A
Package body materialPLASTIC/EPOXY
Package shapeROUND
Package formLONG FORM
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Maximum repetitive peak reverse voltage800 V
surface mountNO
Terminal surfaceMATTE TIN
Terminal formWIRE
Terminal locationAXIAL
Maximum time at peak reflow temperatureNOT SPECIFIED
Base Number Matches1
1N4001S thru 1N4007S
Taiwan Semiconductor
CREAT BY ART
FEATURES
- High efficiency, low VF
- High current capability
- High reliability
- High surge current capability
- Low power loss
- Compliant to RoHS Directive 2011/65/EU and
in accordance to WEEE 2002/96/EC
- Halogen-free according to IEC 61249-2-21 definition
Silicon Rectifiers
MECHANICAL DATA
Case:
A-405
Molding compound, UL flammability classification rating 94V-0
Base P/N with suffix "G" on packing code - halogen-free
Terminal:
Matte tin plated leads, solderable per JESD22-B102
Meet JESD 201 class 1A whisker test
Weight:
0.2g (approximately)
A-405
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
(T
A
=25℃ unless otherwise noted)
PARAMETER
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current
Peak forward surge current, 8.3 ms single half sine-wave
superimposed on rated load
Maximum instantaneous forward voltage (Note 1)
@1A
Maximum reverse current @ rated VR
Typical junction capacitance (Note 2)
Typical thermal resistance
Operating junction temperature range
Storage temperature range
Note 1: Pulse test with PW=300
μs,
1% duty cycle
Note 2: Measured at 1 MHz and Applied Reverse Voltage of 4.0V D.C.
T
J
=25
T
J
=125
SYMBOL
V
RRM
V
RMS
V
DC
I
F(AV)
I
FSM
V
F
I
R
Cj
R
θJA
T
J
T
STG
1N
50
35
50
1N
100
70
100
1N
200
140
200
1N
400
280
400
1
30
1.0
5
50
15
50
- 55 to +150
- 55 to +150
O
1N
600
420
600
1N
800
560
800
1N
1000
700
1000
4001S 4002S 4003S 4004S 4005S 4006S 4007S
UNIT
V
V
V
A
A
V
μA
pF
C/W
O
O
C
C
Document Number: DS_D1402005
Version: E14

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