PNP Silicon AF Transistors
BC 327
BC 328
q
High current gain
q
High collector current
q
Low collector-emitter saturation voltage
q
Complementary types: BC 337, BC 338 (NPN)
2
3
1
Type
BC 327
BC 327-16
BC 327-25
BC 327-40
BC 328
BC 328-16
BC 328-25
BC 328-40
Marking
–
Ordering Code
Q62702-C311
Q62702-C311-V3
Q62702-C311-V4
Q62702-C311-V2
Q62702-C312
Q62702-C312-V3
Q62702-C312-V4
Q62702-C312-V2
Pin Configuration
1
2
3
C
B
E
Package
1)
TO-92
1)
For detailed information see chapter Package Outlines.
Semiconductor Group
1
5.91
BC 327
BC 328
Maximum Ratings
Parameter
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Collector current
Peak collector current
Base current
Peak base current
Total power dissipation,
T
C
= 66 ˚C
Junction temperature
Storage temperature range
Thermal Resistance
Junction - ambient
Junction - case
1)
R
th JA
R
th JC
≤
200
≤
135
Symbol
V
CE0
V
CB0
V
EB0
I
C
I
CM
I
B
I
BM
P
tot
T
j
T
stg
Values
BC 327
45
50
5
BC 328
25
30
800
1
100
200
625
150
Unit
V
mA
A
mA
mW
˚C
– 65 … + 150
K/W
1)
Mounted on Al heat sink 15 mm
×
25 mm
×
0.5 mm.
Semiconductor Group
2
BC 327
BC 328
Electrical Characteristics
at
T
A
= 25 ˚C, unless otherwise specified.
Parameter
Symbol
min.
DC characteristics
Collector-emitter breakdown voltage
I
C
= 10 mA
BC 327
BC 328
Collector-base breakdown voltage
I
C
= 100
µ
A
BC 327
BC 328
Emitter-base breakdown voltage
I
E
= 10
µ
A
Collector cutoff current
V
CB
= 25 V
V
CB
= 45 V
V
CB
= 25 V,
T
A
= 150 ˚C
V
CB
= 45 V,
T
A
= 150 ˚C
Emitter cutoff current
V
EB
= 4 V
DC current gain
1)
I
C
= 100 mA;
V
CE
= 1 V
BC 327/16; BC 328/16
BC 327/25; BC 328/25
BC 327/40; BC 328/40
I
C
= 300 mA;
V
CE
= 1 V
BC 327/16; BC 328/16
BC 327/25; BC 328/25
BC 327/40; BC 328/40
Collector-emitter saturation voltage
1)
I
C
= 500 mA;
I
B
= 50 mA
Base-emitter saturation voltage
1)
I
C
= 500 mA;
I
B
= 50 mA
V
CEsat
V
BEsat
60
100
170
–
–
–
–
–
–
–
–
–
–
0.7
2
V
BC 328
BC 327
BC 328
BC 327
I
EB0
h
FE
100
160
250
160
250
350
250
400
630
V
(BR)EB0
I
CB0
–
–
–
–
–
–
–
–
–
–
100
100
10
10
100
nA
nA
µ
A
µ
A
nA
–
V
(BR)CE0
45
25
V
(BR)CB0
50
30
5
–
–
–
–
–
–
–
–
–
–
V
Values
typ.
max.
Unit
1)
Pulse test:
t
≤
300
µ
s,
D
≤
2 %.
Semiconductor Group
3
BC 327
BC 328
Electrical Characteristics
at
T
A
= 25 ˚C, unless otherwise specified.
Parameter
Symbol
min.
AC characteristics
Transition frequency
I
C
= 50 mA,
V
CE
= 5 V,
f
= 20 MHz
Output capacitance
V
CB
= 10 V,
f
= 1 MHz
Input capacitance
V
EB
= 0.5 V,
f
= 1 MHz
f
T
C
obo
C
ibo
–
–
–
200
12
60
–
–
–
MHz
pF
Values
typ.
max.
Unit
Semiconductor Group
4
BC 327
BC 328
Total power dissipation
P
tot
=
f
(T
A
;
T
C
)
Permissible pulse load
R
thJA
=
f
(t
p
)
Collector current
I
C
=
f
(V
BE
)
V
CE
= 1 V
Collector cutoff current
I
CB0
=
f
(T
A
)
V
CB
= 45 V
Semiconductor Group
5
FPGA/CPLD
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