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BC337-16

Description
NPN general purpose transistor
CategoryDiscrete semiconductor    The transistor   
File Size101KB,4 Pages
ManufacturerMotorola ( NXP )
Websitehttps://www.nxp.com
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BC337-16 Overview

NPN general purpose transistor

BC337-16 Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerMotorola ( NXP )
package instructionCYLINDRICAL, O-PBCY-T3
Reach Compliance Codeunknown
Maximum collector current (IC)0.8 A
Collector-emitter maximum voltage45 V
ConfigurationSINGLE
Minimum DC current gain (hFE)100
JEDEC-95 codeTO-92
JESD-30 codeO-PBCY-T3
JESD-609 codee0
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeROUND
Package formCYLINDRICAL
Polarity/channel typeNPN
Maximum power consumption environment1.5 W
Maximum power dissipation(Abs)0.625 W
Certification statusNot Qualified
surface mountNO
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formTHROUGH-HOLE
Terminal locationBOTTOM
transistor applicationsAMPLIFIER
Transistor component materialsSILICON
Nominal transition frequency (fT)210 MHz
VCEsat-Max0.7 V
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Amplifier Transistors
Order this document
by BC337/D
NPN Silicon
COLLECTOR
1
2
BASE
3
EMITTER
BC337,-16,-25,-40
BC338,-16,-25,-40
MAXIMUM RATINGS
Rating
Collector – Emitter Voltage
Collector – Base Voltage
Emitter – Base Voltage
Collector Current — Continuous
Total Device Dissipation @ TA = 25°C
Derate above 25°C
Total Device Dissipation @ TC = 25°C
Derate above 25°C
Operating and Storage Junction
Temperature Range
Symbol
VCEO
VCBO
VEBO
IC
PD
PD
TJ, Tstg
BC337
45
50
5.0
800
625
5.0
1.5
12
– 55 to +150
BC338
25
30
Unit
Vdc
Vdc
Vdc
mAdc
mW
mW/°C
Watt
mW/°C
°C
1
2
3
CASE 29–04, STYLE 17
TO–92 (TO–226AA)
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Case
Symbol
R
q
JA
R
q
JC
Max
200
83.3
Unit
°C/W
°C/W
ELECTRICAL CHARACTERISTICS
(TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector – Emitter Breakdown Voltage
(IC = 10 mA, IB = 0)
Collector – Emitter Breakdown Voltage
(IC = 100
µA,
IE = 0)
Emitter – Base Breakdown Voltage
(IE = 10
m
A, IC = 0)
Collector Cutoff Current
(VCB = 30 V, IE = 0)
(VCB = 20 V, IE = 0)
Collector Cutoff Current
(VCE = 45 V, VBE = 0)
(VCE = 25 V, VBE = 0)
Emitter Cutoff Current
(VEB = 4.0 V, IC = 0)
BC337
BC338
ICES
BC337
BC338
IEBO
100
100
100
nAdc
V(BR)CEO
BC337
BC338
V(BR)CES
BC337
BC338
V(BR)EBO
ICBO
100
100
nAdc
50
30
5.0
Vdc
nAdc
45
25
Vdc
Vdc
Motorola Small–Signal Transistors, FETs and Diodes Device Data
©
Motorola, Inc. 1996
1

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BC337-16 BC337 BC337-25 BC337-40 BC338 BC338-16 BC338-25
Description NPN general purpose transistor 800 mA, 45 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92 800 mA, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92 NPN general purpose transistor NPN SILICON AF MEDIUM POWER TRANSISTOR 800 mA, 45 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92 800 mA, 45 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92
Maker Motorola ( NXP ) Motorola ( NXP ) Motorola ( NXP ) Motorola ( NXP ) Motorola ( NXP ) Motorola ( NXP ) Motorola ( NXP )
Reach Compliance Code unknown unknow unknow unknow unknow unknown unknown
Maximum collector current (IC) 0.8 A 0.8 A 0.8 A 0.8 A 0.8 A 0.8 A 0.8 A
Collector-emitter maximum voltage 45 V 45 V 45 V 45 V 25 V 25 V 25 V
Configuration SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE
Minimum DC current gain (hFE) 100 100 160 250 100 100 160
JEDEC-95 code TO-92 TO-92 TO-92 TO-92 TO-92 TO-92 TO-92
JESD-30 code O-PBCY-T3 O-PBCY-T3 O-PBCY-T3 O-PBCY-T3 O-PBCY-T3 O-PBCY-T3 O-PBCY-T3
JESD-609 code e0 e0 e0 e0 e0 e0 e0
Number of components 1 1 1 1 1 1 1
Number of terminals 3 3 3 3 3 3 3
Maximum operating temperature 150 °C 150 °C 150 °C 150 °C 150 °C 150 °C 150 °C
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape ROUND ROUND ROUND ROUND ROUND ROUND ROUND
Package form CYLINDRICAL CYLINDRICAL CYLINDRICAL CYLINDRICAL CYLINDRICAL CYLINDRICAL CYLINDRICAL
Polarity/channel type NPN NPN NPN NPN NPN NPN NPN
Maximum power consumption environment 1.5 W 1.5 W 1.5 W 1.5 W 1.5 W 1.5 W 1.5 W
Maximum power dissipation(Abs) 0.625 W 0.625 W 0.625 W 0.625 W 0.625 W 0.625 W 0.625 W
Certification status Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified
surface mount NO NO NO NO NO NO NO
Terminal surface Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb)
Terminal form THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE
Terminal location BOTTOM BOTTOM BOTTOM BOTTOM BOTTOM BOTTOM BOTTOM
transistor applications AMPLIFIER AMPLIFIER AMPLIFIER AMPLIFIER AMPLIFIER AMPLIFIER AMPLIFIER
Transistor component materials SILICON SILICON SILICON SILICON SILICON SILICON SILICON
Nominal transition frequency (fT) 210 MHz 210 MHz 210 MHz 210 MHz 210 MHz 210 MHz 210 MHz
VCEsat-Max 0.7 V 0.7 V 0.7 V 0.7 V 0.7 V 0.7 V 0.7 V
Is it Rohs certified? incompatible incompatible incompatible incompatible incompatible incompatible -
package instruction CYLINDRICAL, O-PBCY-T3 CYLINDRICAL, O-PBCY-T3 CYLINDRICAL, O-PBCY-T3 CYLINDRICAL, O-PBCY-T3 - CYLINDRICAL, O-PBCY-T3 CYLINDRICAL, O-PBCY-T3

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