®
STY25NA60
N - CHANNEL 600V - 0.225Ω - 25 A - Max247
EXSTREMELY LOW GATE CHARGE POWER MOSFET
TYPE
STY25NA60
s
s
V
DSS
600 V
R
DS(on)
< 0.24
Ω
I
D
25 A
s
s
s
s
s
TYPICAL R
DS(on)
= 0.225
Ω
EFFICIENT AND RELIABLE MOUNTING
THROUGH CLIP
±
30V GATE TO SOURCE VOLTAGE RATING
100% AVALANCHE TESTED
LOW INTRINSIC CAPACITANCE
GATE CHARGE MINIMIZED
REDUCED VOLTAGE SPREAD
1
2
3
DESCRIPTION
The Max247™ package is a new high volume
power package exibiting the same footprint as the
industry standard TO-247, but designed to acco-
modate much larger silicon chips, normally sup-
plied in bigger packages such as TO-264.The in-
creased die capacity makes the device idealto re-
duce component count in multiple paralleled de-
signs and save board space with respect to larger
packages.
APPLICATIONS
s
HIGH CURRENT, HIGH SPEED SWITCHING
s
SWITCH MODE POWER SUPPLY (SMPS)
s
DC-AC CONVERTER FOR WELDING
EQUIPMENT AND UNINTERRUPTABLE
POWER SUPPLY AND MOTOR DRIVE
ABSOLUTE MAXIMUM RATINGS
Symb ol
V
DS
V
DGR
V
GS
I
D
I
D
I
DM
(•)
P
tot
T
s tg
T
j
Parameter
Drain-source Voltage (V
GS
= 0)
Drain- gate Voltage (R
GS
= 20 k
Ω
)
G ate-source Voltage
Drain Current (continuous) at T
c
= 25
o
C
Drain Current (continuous) at T
c
= 100 C
Drain Current (pulsed)
T otal Dissipation at T
c
= 25
o
C
Derating F actor
Storage Temperature
Max. O perating Junction Temperature
o
Max247™
INTERNAL SCHEMATIC DIAGRAM
Value
600
600
±
30
25
16.5
100
300
2.4
-55 to 150
150
Un it
V
V
V
A
A
A
W
W /
o
C
o
o
C
C
(
•
) Pulse width limited by safe operating area
March 1999
1/8
STY25NA60
THERMAL DATA
R
thj -case
R
thj -amb
R
thc-sink
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
Thermal Resistance Case-Heatsink
with Conductive Grease
Max
Max
Typ
0.42
40
0.05
o
o
C/W
C/W
o
C/W
AVALANCHE CHARACTERISTICS
Symbo l
I
AR
E
AS
Parameter
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by T
j
max)
Single Pulse Avalanche Energy
o
(starting T
j
= 25 C, I
D
= I
AR
, V
DD
= 50 V)
Max Valu e
25
3000
Unit
A
mJ
ELECTRICAL CHARACTERISTICS
(T
case
= 25
o
C unless otherwise specified)
OFF
Symbo l
V
(BR)DSS
I
DSS
I
GSS
Parameter
Drain-source
Breakdown Voltage
Test Con ditions
I
D
= 250
µA
V
GS
= 0
Min.
600
50
500
±
100
T yp.
Max.
Unit
V
µA
µ
A
nA
V
DS
= Max Rating
Zero G ate Voltage
Drain Current (V
GS
= 0) V
DS
= Max Rating
Gate-body Leakage
Current (V
DS
= 0)
V
GS
=
±
30 V
T
c
= 125 C
o
ON (∗)
Symbo l
V
GS(th)
R
DS(on)
I
D(o n)
Parameter
Gate Threshold
Voltage
V
DS
= V
GS
Test Con ditions
I
D
= 250
µA
I
D
= 12.5 A
25
Min.
3
T yp.
4
0.225
Max.
5
0.24
Unit
V
Ω
A
Static Drain-source O n V
GS
= 10 V
Resistance
On State Drain Current V
DS
> I
D(o n)
x R
DS(on )ma x
V
GS
= 10 V
DYNAMIC
Symbo l
g
f s
(∗)
C
iss
C
os s
C
rss
Parameter
Forward
Transconductance
Input Capacitance
Output Capacitance
Reverse T ransfer
Capacitance
Test Con ditions
V
DS
> I
D(o n)
x R
DS(on )ma x
V
DS
= 25 V
f = 1 MHz
I
D
= 12.5 A
V
GS
= 0
Min.
20
6200
690
195
T yp.
Max.
Unit
S
pF
pF
pF
2/8
STY25NA60
ELECTRICAL CHARACTERISTICS
(continued)
SWITCHING ON
Symbo l
t
d(on)
t
r
Q
g
Q
gs
Q
gd
Parameter
Turn-on delay Time
Rise Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Test Con ditions
V
DD
= 300 V
I
D
= 12.5 A
V
GS
= 10 V
R
G
= 4.7
Ω
(see test circuit, figure 3)
V
DD
= 480 V I
D
= 25 A V
GS
= 10 V
Min.
T yp.
45
70
240
25
115
315
Max.
Unit
ns
ns
nC
nC
nC
SWITCHING OFF
Symbo l
t
r (Voff)
t
f
t
c
Parameter
Off-voltage Rise Time
Fall Time
Cross-over Time
Test Con ditions
V
DD
= 480 V
I
D
= 25 A
V
GS
= 10 V
R
G
= 4.7
Ω
(see test circuit, figure 5)
Min.
T yp.
70
25
105
Max.
Unit
ns
ns
ns
SOURCE DRAIN DIODE
Symbo l
I
SD
I
SDM
(•)
V
SD
(∗)
t
rr
Q
rr
I
RRM
Parameter
Source-drain Current
Source-drain Current
(pulsed)
Forward On Voltage
Reverse Recovery
Time
Reverse Recovery
Charge
Reverse Recovery
Current
I
SD
= 25 A
V
GS
= 0
840
19.5
46.5
di/dt = 100 A/
µ
s
I
SD
= 25 A
T
j
= 150
o
C
V
DD
= 100 V
(see test circuit, figure 5)
Test Con ditions
Min.
T yp.
Max.
25
100
2
Unit
A
A
V
ns
µ
C
A
(∗) Pulsed: Pulse duration = 300
µs,
duty cycle 1.5 %
(•) Pulse width limited by safe operating area
Safe Operating Area
Thermal Impedance
3/8
Power technology
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