BC546 THRU BC549
Small Signal Transistors (NPN)
TO-92
.181 (4.6)
min. .492 (12.5) .181 (4.6)
.142 (3.6)
♦
NPN Silicon Epitaxial Planar Transistors
♦
These transistors are subdivided into three groups
A, B and C according to their current gain. The type
BC546 is available in groups A and B, how-
ever, the types BC547 and BC548 can be
supplied in all three groups. The BC549 is a
low-noise type and available in groups B and
C. As complementary types, the PNP transis-
tors BC556 … BC559 are recommended.
FEATURES
max.
∅
.022 (0.55)
.098 (2.5)
C
B
E
♦
On special request, these transistors are also
manufactured in the pin configuration TO-18.
MECHANICAL DATA
Case:
TO-92 Plastic Package
Weight:
approx. 0.18 g
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 °C ambient temperature unless otherwise specified
Symbol
Collector-Base Voltage
BC546
BC547
BC548, BC549
BC546
BC547
BC548, BC549
BC546
BC547
BC548, BC549
BC546, BC547
BC548, BC549
V
CBO
V
CBO
V
CBO
V
CES
V
CES
V
CES
V
CEO
V
CEO
V
CEO
V
EBO
V
EBO
I
C
I
CM
I
BM
–I
EM
P
tot
T
j
T
S
Value
80
50
30
80
50
30
65
45
30
6
5
100
200
200
200
500
1)
150
–65 to +150
Unit
V
V
V
V
V
V
V
V
V
V
V
mA
mA
mA
mA
mW
°C
°C
Collector-Emitter Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Peak Collector Current
Peak Base Current
Peak Emitter Current
Power Dissipation at T
amb
= 25 °C
Junction Temperature
Storage Temperature Range
1)
Valid provided that leads are kept at ambient temperature at a distance of 2 mm from case
4/98
BC546 THRU BC549
ELECTRICAL CHARACTERISTICS
Ratings at 25 °C ambient temperature unless otherwise specified
Symbol
h-Parameters at V
CE
= 5 V, I
C
= 2 mA,
f = 1 kHz,
Small Signal Current Gain
Min.
Typ.
Max.
Unit
Current Gain Group A
B
C
Current Gain Group A
Input Impedance
B
C
Output Admittance
Current Gain Group A
B
C
Reverse Voltage Transfer Ratio
h
fe
h
fe
h
fe
h
ie
h
ie
h
ie
h
oe
h
oe
h
oe
h
re
h
re
h
re
–
–
–
1.6
3.2
6
–
–
–
–
–
–
220
330
600
2.7
4.5
8.7
18
30
60
1.5 · 10
–4
2 · 10
–4
3 · 10
–4
–
–
–
4.5
8.5
15
30
60
110
–
–
–
–
–
–
kΩ
kΩ
kΩ
µS
µS
µS
–
–
–
Current Gain Group A
B
C
DC Current Gain
at V
CE
= 5 V, I
C
= 10µA
Current Gain Group A
B
C
Current Gain Group A
B
C
Current Gain Group A
B
C
at V
CE
= 5 V, I
C
= 2 mA
h
FE
h
FE
h
FE
h
FE
h
FE
h
FE
h
FE
h
FE
h
FE
R
thJA
V
CEsat
V
CEsat
V
BEsat
V
BEsat
V
BE
V
BE
–
–
–
110
200
420
–
–
–
–
–
–
–
–
580
–
–
–
–
–
–
90
150
270
180
290
500
120
200
400
–
80
200
700
900
660
–
0.2
0.2
0.2
–
–
–
–
–
220
450
800
–
–
–
250
1)
200
600
–
–
700
720
15
15
15
4
4
–
–
–
–
–
–
–
–
–
K/W
mV
mV
mV
mV
mV
mV
nA
nA
nA
µA
µA
at V
CE
= 5 V, I
C
= 100 mA
Thermal Resistance Junction to Ambient Air
Collector Saturation Voltage
at I
C
= 10 mA, I
B
= 0.5 mA
at I
C
= 100 mA, I
B
= 5 mA
Base Saturation Voltage
at I
C
= 10 mA, I
B
= 0.5 mA
at I
C
= 100 mA, I
B
= 5 mA
Base-Emitter Voltage
at V
CE
= 5 V, I
C
= 2 mA
at V
CE
= 5 V, I
C
= 10 mA
Collector-Emitter Cutoff Current
at V
CE
= 80 V
at V
CE
= 50 V
at V
CE
= 30 V
at V
CE
= 80 V, T
j
= 125 °C
at V
CE
= 50 V, T
j
= 125 °C
1)
BC546
BC547
I
CES
I
CES
I
CES
I
CES
I
CES
BC548, BC549
BC546
BC547
Valid provided that leads are kept at ambient temperature at a distance of 2 mm from case
BC546 THRU BC549
ELECTRICAL CHARACTERISTICS
Ratings at 25 °C ambient temperature unless otherwise specified
Symbol
at V
CE
= 30 V, T
j
= 125 °C
BC548, BC549
I
CES
f
T
C
CBO
C
EBO
Min.
–
–
–
–
Typ.
–
300
3.5
9
Max.
4
4
–
6
–
Unit
µA
µA
MHz
pF
pF
Gain-Bandwidth Product
at V
CE
= 5 V, I
C
= 10 mA, f = 100 MHz
Collector-Base Capacitance
at V
CB
= 10 V, f = 1 MHz
Emitter-Base Capacitance
at V
EB
= 0.5 V, f = 1 MHz
Noise Figure
at V
CE
= 5 V, I
C
= 200
µA,
R
G
= 2 kΩ,
f = 1 kHz,
∆f
= 200 Hz
BC546, BC547
BC548
BC549
BC549
F
F
F
–
–
–
2
1.2
1.4
10
4
4
dB
dB
dB
at V
CE
= 5 V, I
C
= 200
µA,
R
G
= 2 kΩ,
f = 30…15000 Hz
RATINGS AND CHARACTERISTIC CURVES BC546 THRU BC549
Microcontroller MCU
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