BSS84
P-CHANN
NEL ENHANC
CEMENT MO
ODE MOSFET
T
Product Su
P
ummary
V
(BR)DSS
-50V
R
DS( max
(on)
10 @ V
GS
= -5V
I
D
T
A
= +25°C
-130mA
Feat
tures and B
Benefits
Low On-Resistance
Low Gate Threshold Voltage
Low Input Capacitance
Fast Switching Sp
F
peed
Low Input/Output Leakage
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
T
S
Halogen and Ant
H
timony Free. “G
Green” Device (N
Note 3)
Qualified to AEC
Q
C-Q101 Standard for High Reliability
ds
Description
D
This MOSFET ha been designe to minimize the on-state resist
T
as
ed
tance
(R
(
DS(on)
) and yet maintain super switching pe
t
rior
erformance, making it
ideal for high efficiency power ma
anagement applications.
Applications
A
General Purpose Interfacing Switch
g
Power Mana
agement Functio
ons
Analog Swit
tch
Mec
chanical Da
ata
Drain
Case: SOT23
C
Case Material: UL Flammability C
C
L
Classification Rati 94V-0
ing
Moisture Sensitivi Level 1 per J-STD-020
M
ity:
Terminals: Matte Tin Finish (Lead Free Plating) So
T
olderable per
MIL-STD-202, Me
M
ethod 208
e3
Terminal Connect
T
tions: See Diagra
am
Weight: 0.008 gra
W
ams (approximate
e)
SOT23
D
Gate
G
Source
S
Top View
Equivalent C
Circuit
Top View
Ordering In
O
nformation
(Note 4)
n
Part N
Number
BSS
S84-7-F
BSS8
84Q-7-F
BSS8
84-13-F
BSS84
4Q-13-F
Notes:
Qualification
Q
Commercial
C
Automotive
Commercial
C
Automotive
Case
SOT23
SOT23
SOT23
SOT23
Packag
ging
3000/Tape & Reel
e
3000/Tape & Reel
e
10000/Tape & Reel
e
10000/Tape & Reel
e
1. No p
purposely added lead. Fully EU Direct
tive 2002/95/EC (R
RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_f
free.html for more information about D
Diodes Incorporated definitions of Ha
d’s
alogen- and Antimo
ony-free, "Green"
and Lead-free.
3. Halo
ogen- and Antimony
y-free "Green” prod
ducts are defined a those which cont
as
tain <900ppm brom
mine, <900ppm chlo
orine (<1500ppm to Br + Cl) and
otal
<100
00ppm antimony co
ompounds.
4. For packaging details, go to our website a http://www.diode
at
es.com/products/pa
ackages.html
Marking Inf
M
formation
K84 = Product Type M
Marking Code
YM = Date Code Mar
rking for SAT (Sh
hanghai Assembly/ Test site)
YM = Date Code Mar
rking for CAT (Ch
hengdu Assembly/ Test site)
̅
Y or Y = Year (ex: A = 2013)
̅
M=M
Month (ex: 9 = Se
eptember)
Chengdu A/T Site
A
Date Code Key
Year
Code
Month
Code
1998
J
Jan
1
1999
9
K
Feb
F
2
2000
L
Sh
hanghai A/T Sit
te
200
01
M
Mar
3
2002
N
Apr
4
2003
P
May
M
5
2004
R
Jun
6
…
…
2011
Y
Jul
7
2012
2
Z
Aug
A
8
2013
A
Sep
9
2014
B
Oct
O
2015
C
2016
D
Nov
N
N
2017
E
Dec
D
August 2013
© Diodes Incorporate
ed
BSS84
Document number DS30149 Rev. 20 - 2
r:
0
1 of 5
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w
BSS84
Maximum Ratings
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
Drain-Source Voltage
Drain-Gate Voltage R
GS
20K
Gate-Source Voltage
Drain Current (Note 5)
Pulsed Drain Current
Symbol
V
DSS
V
DGR
V
GSS
I
D
I
DM
Value
-50
-50
20
-130
-1.2
Units
V
V
V
mA
A
Continuous
Continuous
Thermal Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Symbol
P
D
R
JA
T
J
, T
STG
Value
300
417
-55 to +150
Units
mW
C/W
C
Characteristic
Total Power Dissipation (Note 5)
Thermal Resistance, Junction to Ambient
Operating and Storage Temperature Range
Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 6)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage
ON CHARACTERISTICS (Note 6)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transconductance
DYNAMIC CHARACTERISTICS (Note 7)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
SWITCHING CHARACTERISTICS (Note 7)
Turn-On Delay Time
Turn-Off Delay Time
Notes:
Symbol
BV
DSS
I
DSS
I
GSS
V
GS(th)
R
DS (ON)
g
FS
C
iss
C
oss
C
rss
t
D(ON)
t
D(OFF)
Min
-50
-0.8
0.05
Typ
10
18
Max
-1
-2
-100
10
-2.0
10
45
25
12
Unit
V
µA
µA
nA
nA
V
S
pF
pF
pF
ns
ns
Test Condition
V
GS
= 0V, I
D
= -250µA
V
DS
= -50V, V
GS
= 0V, T
J
= +25°C
V
DS
= -50V, V
GS
= 0V, T
J
= +125°C
V
DS
= -25V, V
GS
= 0V, T
J
= +25°C
V
GS
=
20V,
V
DS
= 0V
V
DS
= V
GS
, I
D
= -1mA
V
GS
= -5V, I
D
= -0.100A
V
DS
= -25V, I
D
= -0.1A
V
DS
= -25V, V
GS
= 0V, f = 1.0MHz
V
DD
= -30V, I
D
= -0.27A,
R
GEN
= 50, V
GS
= -10V
5. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001,
which can be found on our website at http://www.diodes.com.
6. Short duration pulse test used to minimize self-heating effect.
7. Guaranteed by design. Not subject to production testing
BSS84
Document number: DS30149 Rev. 20 - 2
2 of 5
www.diodes.com
August 2013
© Diodes Incorporated
BSS84
400
I
D
, DRAIN-SOURCE CURRENT (mA)
-600
-500
350
P
D
, POWER DISSIPATION (mW)
300
250
200
150
100
50
0
50
75 100 125 150 175 200
T
A
, AMBIENT TEMPERATURE (°C)
Fig. 1 Max Power Dissipation vs. Ambient Temperature
0
25
-400
-300
-200
-100
0
0
-1
-2
-3
-4
-5
V
DS
, DRAIN-SOURCE VOLTAGE (V)
Fig. 2 Drain-Source Current vs. Drain-Source Voltage
-1.0
10
R
DS(ON)
, NORMALIZED DRAIN-SOURCE
ON-RESISTANCE (
)
9
8
7
6
5
4
3
2
T
A
= 125
°
C
-0.8
I
D
, DRAIN-CURRENT (A)
-0.6
-0.4
-0.2
1
0
T
A
= 25
°
C
0.0
0
-2
-3
-4
-5
-6
-7
-8
V
GS
, GATE-SOURCE VOLTAGE (V)
Fig. 3 Drain-Current vs. Gate-Source Voltage
-1
0
-2
-3
-4
-5
V
GS
, GATE-SOURCE (V)
Fig. 4 On-Resistance vs. Gate-Source Voltage
-1
15
V
GS
= -10V
I
D
= -0.13A
25.0
R
DS(ON)
, ON-RESISTANCE (
)
R
DS(ON)
, ON-RESISTANCE (
)
12
20.0
9
15.0
6
10.0
3
5.0
0
-50
-25
0
25
50
75 100 125 150
T
J
, JUNCTION TEMPERATURE (°C)
Fig. 5 On-Resistance vs. Junction Temperature
0.0
0.0
-0.4
-0.6
-0.8
I
D
, DRAIN-CURRENT (A)
Fig. 6 On-Resistance vs. Drain-Current
-0.2
-1.0
BSS84
Document number: DS30149 Rev. 20 - 2
3 of 5
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August 2013
© Diodes Incorporated
BSS84
Package Outline Dimensions
Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for latest version.
A
B C
H
K
J
F
D
G
L
K1
M
SOT23
Dim
Min
Max
Typ
A
0.37
0.51
0.40
B
1.20
1.40
1.30
C
2.30
2.50
2.40
D
0.89
1.03 0.915
F
0.45
0.60 0.535
G
1.78
2.05
1.83
H
2.80
3.00
2.90
J
0.013 0.10
0.05
K
0.903 1.10
1.00
K1
-
-
0.400
L
0.45
0.61
0.55
M
0.085 0.18
0.11
0°
8°
-
All Dimensions in mm
Suggested Pad Layout
Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version.
Y
Z
C
Dimensions Value (in mm)
Z
2.9
X
0.8
Y
0.9
C
2.0
E
1.35
X
E
BSS84
Document number: DS30149 Rev. 20 - 2
4 of 5
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August 2013
© Diodes Incorporated
BSS84
IMPORTANT NOTICE
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume
all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated
website, harmless against all damages.
Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.
Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and
hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or
indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.
Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings
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This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the
final and determinative format released by Diodes Incorporated.
LIFE SUPPORT
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
labeling can be reasonably expected to result in significant injury to the user.
B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the
failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and
acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any
use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its
representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
Copyright © 2013, Diodes Incorporated
www.diodes.com
BSS84
Document number: DS30149 Rev. 20 - 2
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