STW5NA90
STH5NA90FI
N - CHANNEL ENHANCEMENT MODE
POWER MOS TRANSISTORS
PRELIMINARY DATA
TYPE
ST W5NA90
ST H5NA90F I
s
s
V
DSS
900 V
900 V
R
DS(on)
< 2.5
Ω
< 2.5
Ω
I
D
5.3 A
3.5 A
s
s
s
s
TYPICAL R
DS(on)
= 2.1
Ω
±
30 V GATE-TO-SOURCE VOLTAGE
RATING
100% AVALANCHE TESTED
REPETITIVE AVALANCHE DATA AT 100
o
C
GATE CHARGE MINIMISED
REDUCED THRESHOLD VOLTAGE SPREAD
TO-247
3
2
1
3
2
1
APPLICATIONS
s
HIGH CURRENT, HIGH SPEED SWITCHING
s
SWITCH MODE POWER SUPPLY (SMPS)
s
DC-AC CONVERTERS FOR WELDING
EQUIPMENT AND UNINTERRUPTIBLE
POWER SUPPLIES AND MOTOR DRIVE
ISOWATT218
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Valu e
STW 5NA90
V
DS
V
DGR
V
GS
I
D
I
D
I
DM
(•)
P
t ot
Drain-source Voltage (V
GS
= 0)
Drain- gate Voltage (R
GS
= 20 kΩ)
Gate-source Voltage
Drain Current (continuous) at T
c
= 25
o
C
Drain Current (continuous) at T
c
= 100 C
Drain Current (pulsed)
Total Dissipation at T
c
= 25 C
Derating Factor
V
ISO
T
stg
T
j
Insulation W ithstand Voltage (DC)
Storage T emperature
Max. O perating Junction T emperature
o
o
Un it
ST H5NA90F I
900
900
±
30
V
V
V
3.5
2.2
21.2
60
0.48
4000
A
A
A
W
W/ C
V
o
o
o
5.3
3.4
21.2
150
1.2
-65 to 150
150
C
C
(•) Pulse width limited by safe operating area
January 1998
1/6
STW5NA90-STH5NA90FI
THERMAL DATA
T O-247
R
t hj-ca se
R
t hj- amb
R
thc- si nk
T
l
Thermal Resistance Junction-case
Max
0.83
30
0.1
300
ISOW ATT 218
2.08
o
o
o
C/W
C/W
C/W
o
C
Thermal Resistance Junction-ambient
Max
Thermal Resistance Case-sink
Typ
Maximum Lead Temperature For Soldering Purpose
AVALANCHE CHARACTERISTICS
Symb ol
I
AR
E
AS
Parameter
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by T
j
max,
δ
< 1%)
Single Pulse Avalanche Energy
o
(starting T
j
= 25 C, I
D
= I
AR
, V
DD
= 50 V)
Max Valu e
5.3
520
Unit
A
mJ
ELECTRICAL CHARACTERISTICS
(T
case
= 25
o
C unless otherwise specified)
OFF
Symb ol
V
(BR)DSS
I
DSS
I
GSS
Parameter
Drain-source
Breakdown Voltage
Test Cond ition s
I
D
= 250
µA
V
GS
= 0
Min.
900
25
250
±100
Typ .
Max.
Un it
V
µA
µA
nA
Zero G ate Voltage
V
DS
= Max Rating
Drain Current (V
GS
= 0) V
DS
= Max Rating
Gate-body Leakage
Current (V
DS
= 0)
V
GS
=
±
30 V
T
c
= 100 C
o
ON (∗)
Symb ol
V
GS(th)
R
DS( on)
I
D(o n)
Parameter
Gate Threshold
Voltage
V
DS
= V
GS
Test Cond ition s
I
D
= 250
µA
Min.
2.25
Typ .
3
2.1
5.3
Max.
3.75
2.5
5
Un it
V
Ω
Ω
A
Static Drain-source On V
GS
= 10V I
D
= 2.5 A
Resistance
V
GS
= 10V I
D
= 2.5 A
On State Drain Current V
DS
> I
D(on)
x R
DS(on) max
V
GS
= 10 V
T
c
= 100 C
o
DYNAMIC
Symb ol
g
fs
(∗)
C
iss
C
oss
C
rss
Parameter
Forward
Transconductance
Input Capacitance
Output Capacitance
Reverse T ransfer
Capacitance
Test Cond ition s
V
DS
> I
D(on)
x R
DS(on) max
V
DS
= 25 V
f = 1 MHz
I
D
= 2.5 A
V
GS
= 0
Min.
4
Typ .
6.4
1350
150
40
1900
210
60
Max.
Un it
S
pF
pF
pF
2/6
STW5NA90-STH5NA90FI
ELECTRICAL CHARACTERISTICS
(continued)
SWITCHING ON
Symb ol
t
d(on)
t
r
(di/dt)
on
Parameter
Turn-on Time
Rise Time
Turn-on Current Slope
Test Cond ition s
V
DD
= 450 V
2.5 A
R
G
= 4.7
Ω
V
DD
= 720 V
R
G
= 47
Ω
V
DD
= 720 V
I
D
= 5 A
I
D
=
V
GS
= 10 V
I
D
= 5 A
V
GS
= 10 V
V
GS
= 10 V
250
A/µs
Min.
Typ .
13
12
Max.
20
19
Un it
ns
ns
Q
g
Q
gs
Q
gd
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
60
10
26
80
nC
nC
nC
SWITCHING OFF
Symb ol
t
r(Vof f)
t
f
t
c
Parameter
Off-voltage Rise Time
Fall Time
Cross-over Time
Test Cond ition s
V
DD
= 720 V
R
G
= 4.7
Ω
I
D
= 5A
V
GS
= 10 V
Min.
Typ .
15
7
25
Max.
25
14
40
Un it
ns
ns
ns
SOURCE DRAIN DIODE
Symb ol
I
SD
I
SDM
(•)
V
SD
(∗)
t
rr
Q
rr
I
RRM
Parameter
Source-drain Current
Source-drain Current
(pulsed)
Forward On Voltage
Reverse Recovery
Time
Reverse Recovery
Charge
Reverse Recovery
Current
I
SD
= 5.3 A
I
SD
= 5 A
V
DD
= 30 V
V
GS
= 0
di/dt = 100 A/µs
T
j
= 150
o
C
1150
17.3
30
Test Cond ition s
Min.
Typ .
Max.
5.3
21.3
1.6
Un it
A
A
V
ns
µC
A
(∗) Pulsed: Pulse duration = 300
µs,
duty cycle 1.5 %
(•) Pulse width limited by safe operating area
3/6
Embedded System
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