ZMS2811TC datasheet, PDF - EEWORLD Datasheet

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ZMS2811TC: DescriptionRectifier Diode, Schottky, 1 Element, Silicon; CategoryDiscrete semiconductor diode; File Size34KB，3 Pages; ManufacturerDiodes Incorporated; Environmental Compliance

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ZMS2811TC Overview

Rectifier Diode, Schottky, 1 Element, Silicon

ZMS2811TC Parametric

Parameter Name	Attribute value
Is it Rohs certified?	conform to
Maker	Diodes Incorporated
package instruction	R-PDSO-G2
Reach Compliance Code	unknown
ECCN code	EAR99
Configuration	SINGLE
Diode component materials	SILICON
Diode type	RECTIFIER DIODE
JESD-30 code	R-PDSO-G2
JESD-609 code	e3
Humidity sensitivity level	1
Number of components	1
Number of terminals	2
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	260
Maximum power dissipation	0.25 W
Certification status	Not Qualified
surface mount	YES
technology	SCHOTTKY
Terminal surface	MATTE TIN
Terminal form	GULL WING
Terminal location	DUAL
Maximum time at peak reflow temperature	40

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SOD323 SCHOTTKY BARRIER DIODES

ISSUE 1 – NOVEMBER 1998

7

FEATURES

* Miniature Surface Mount Packages

* Low turn-on voltage

* Pico second switching speed

* High breakdown voltage

APPLICATIONS

* Mixers

* Detectors

* Switching

PARTMARK

ZMS2800 - BA

ZMS2811 - BC

ZMS5800 - BB

ZMS2800

ZMS2811

ZMS5800

C

A

SOD323

ABSOLUTE MAXIMUM RATINGS.

PARAMETER

Forward Current (1µs pulse)

Power Dissipation at T

amb

= 25°C

Operating and Storage Temperature Range

SYMBOL

I

F

P

tot

T

j

:T

stg

VALUE

1

250

-55 to +150

UNIT

A

mW

°C

ELECTRICAL CHARACTERISTICS (at T

amb

= 25°C).

PARAMETER

TYPE

SYMBOL

MIN. TYP. MAX. UNIT CONDITIONS.

Breakdown Voltage

ZMS2800

ZMS2811

ZMS5800

ZMS2800

ZMS2811

ZMS5800

ZMS2800

ZMS2811

ZMS5800

ZMS2800

ZMS2811

ZMS5800

ZC2800E

ZC2811E

ZC5800E

ZC2800E

ZC2811E

ZC5800E

V

BR

70

15

50

200

100

200

410

15

20

15

1.2

1.0

2.0

1.2

2.0

100

V

nA

mV

mA

pF

ps

I

R

=10µA

V

R

=50V

V

R

=10V

V

R

=35V

Reverse Leakage

Current

I

R

Forward Voltage

V

F

I

F

=1mA

Forward Current

I

F

V

F

=1V

Capacitance

C

T

V

R

=0 V, f=1MHz

Effective Minority

Lifetime (1)

τ

f= 54 MHz

I

pk

= 20mA

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