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ZTX453DWP

Description
Small Signal Bipolar Transistor, 100V V(BR)CEO, 1-Element, NPN, Silicon, 0.026 X 0.031 INCH, G9, DIE-2
CategoryDiscrete semiconductor    The transistor   
File Size47KB,1 Pages
ManufacturerDiodes Incorporated
Download Datasheet Parametric View All

ZTX453DWP Overview

Small Signal Bipolar Transistor, 100V V(BR)CEO, 1-Element, NPN, Silicon, 0.026 X 0.031 INCH, G9, DIE-2

ZTX453DWP Parametric

Parameter NameAttribute value
MakerDiodes Incorporated
Parts packaging codeDIE
package instructionUNCASED CHIP, R-XUUC-N2
Contacts2
Reach Compliance Codeunknown
ECCN codeEAR99
Collector-emitter maximum voltage100 V
ConfigurationSINGLE
Minimum DC current gain (hFE)40
JESD-30 codeR-XUUC-N2
JESD-609 codee0
Number of components1
Number of terminals2
Package body materialUNSPECIFIED
Package shapeRECTANGULAR
Package formUNCASED CHIP
Peak Reflow Temperature (Celsius)235
Polarity/channel typeNPN
Certification statusNot Qualified
surface mountYES
Terminal surfaceTIN LEAD
Terminal formNO LEAD
Terminal locationUPPER
Maximum time at peak reflow temperature10
Transistor component materialsSILICON
Nominal transition frequency (fT)150 MHz
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