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ZTX457

Description
Small Signal Bipolar Transistor, 0.5A I(C), 300V V(BR)CEO, 1-Element, NPN, Silicon, TO-92 COMPATIBLE, E-LINE PACKAGE-3
CategoryDiscrete semiconductor    The transistor   
File Size35KB,1 Pages
ManufacturerDiodes Incorporated
Environmental Compliance  
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ZTX457 Overview

Small Signal Bipolar Transistor, 0.5A I(C), 300V V(BR)CEO, 1-Element, NPN, Silicon, TO-92 COMPATIBLE, E-LINE PACKAGE-3

ZTX457 Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerDiodes Incorporated
Parts packaging codeTO-92
package instructionIN-LINE, R-PSIP-W3
Contacts3
Reach Compliance Codecompliant
ECCN codeEAR99
Factory Lead Time15 weeks
Samacsys DescriptionDiodes Inc ZTX457 NPN Bipolar Transistor, 500 mA, 300 V, 3-Pin TO-92
Maximum collector current (IC)0.5 A
Collector-emitter maximum voltage300 V
ConfigurationSINGLE
Minimum DC current gain (hFE)25
JESD-30 codeR-PSIP-W3
JESD-609 codee3
Number of components1
Number of terminals3
Maximum operating temperature200 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formIN-LINE
Peak Reflow Temperature (Celsius)260
Polarity/channel typeNPN
Certification statusNot Qualified
surface mountNO
Terminal surfaceMatte Tin (Sn)
Terminal formWIRE
Terminal locationSINGLE
Maximum time at peak reflow temperature40
Transistor component materialsSILICON
Nominal transition frequency (fT)75 MHz
NPN SILICON PLANAR MEDIUM POWER
HIGH VOLTAGE TRANSISTOR
ISSUE 2 – MARCH 1994
FEATURES
* 300 Volt V
CEO
* 0.5 Amp continuous current
* P
tot
= 1 Watt
ZTX457
C
B
E
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Peak Pulse Current
Continuous Collector Current
Power Dissipation at T
amb
=25°C
Operating and Storage Temperature Range
SYMBOL
V
CBO
V
CEO
V
EBO
I
CM
I
C
P
tot
T
j
:T
stg
E-Line
TO92 Compatible
VALUE
300
300
5
1
500
1
-55 to +200
UNIT
V
V
V
A
mA
W
°C
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C unless otherwise stated).
PARAMETER
Collector-Base
Breakdown Voltage
Collector-Emitter
Breakdown Voltage
Emitter-Base
Breakdown Voltage
Collector Cut-Off
Current
Collector-Emitter
Saturation Voltage
Base-Emitter
Saturation Voltage
Base-Emitter
Turn On Voltage
SYMBOL
V
(BR)CBO
V
CEO(sus)
V
(BR)EBO
I
CBO
MIN.
300
300
5
100
10
100
0.3
1
1
50
50
25
75
TYP.
MAX.
UNIT
V
V
V
nA
CONDITIONS.
I
C
=100
µ
A, I
E
=0
I
C
=10mA, I
B
=0*
I
E
=100
µ
A
V
CB
=200V
V
CB
=200V, T
amb
=100°C
V
EB
=4V
I
C
=100mA, I
B
=10mA*
I
C
=100mA, I
B
=10mA*
IC=100mA, V
CE
=10V*
I
C
=10mA, V
CE
=10V*
I
C
=50mA, V
CE
=10V*
I
C
=100mA, V
CE
=10V*
MHz
I
C
=50mA, V
CE
=10V
f=20MHz
µ
A
Emitter Cut-Off Current I
EBO
V
CE(sat)
V
BE(sat)
V
BE(on)
nA
V
V
V
Static Forward Current h
FE
Transfer Ratio
Transition Frequency
f
T
300
*Measured under pulsed conditions. Pulse width=300
µ
s. Duty cycle
2%
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