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ZUMT807-25

Description
Small Signal Bipolar Transistor, 0.5A I(C), 45V V(BR)CEO, 1-Element, PNP, Silicon, SOT-323, 3 PIN
CategoryDiscrete semiconductor    The transistor   
File Size23KB,1 Pages
ManufacturerDiodes Incorporated
Download Datasheet Parametric Compare View All

ZUMT807-25 Overview

Small Signal Bipolar Transistor, 0.5A I(C), 45V V(BR)CEO, 1-Element, PNP, Silicon, SOT-323, 3 PIN

ZUMT807-25 Parametric

Parameter NameAttribute value
MakerDiodes Incorporated
Parts packaging codeSC-70
package instructionSMALL OUTLINE, R-PDSO-G3
Contacts3
Manufacturer packaging codeSOT323
Reach Compliance Codecompliant
ECCN codeEAR99
Maximum collector current (IC)0.5 A
Collector-emitter maximum voltage45 V
ConfigurationSINGLE
Minimum DC current gain (hFE)160
JESD-30 codeR-PDSO-G3
Number of components1
Number of terminals3
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Polarity/channel typePNP
Certification statusNot Qualified
surface mountYES
Terminal formGULL WING
Terminal locationDUAL
Transistor component materialsSILICON
Nominal transition frequency (fT)100 MHz
Not Recommended for New Design
Please Use ZUMT491
SOT323 PNP SILICON PLANAR
MEDIUM POWER TRANSISTOR
ISSUE 2 – FEBRUARY 1999
PARTMARKING DETAILS
ZUMT807-25 -
ZUMT807-40 -
T8
T24
ZUMT807-25
ZUMT807-40
COMPLEMENTARY TYPES
ZUMT807-25 -
ZUMT807-40 -
ZUMT817-25
ZUMT817-40
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Peak Pulse Current
Continuous Collector Current
Base Current
Peak Base Current
Power Dissipation at T
amb
=25°C
Operating and Storage Temperature Range
SYMBOL
V
CBO
V
CEO
V
EBO
I
CM
I
C
I
B
I
BM
P
tot
T
j
:T
stg
VALUE
-50
-45
-5
-1
-500
-100
-200
330
-55 to +150
UNIT
V
V
V
A
mA
mA
mA
mW
°C
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C unless otherwise stated).
PARAMETER
Collector Cut-Off
Current
Emitter Cut-Off Current
Collector-Emitter
Saturation Voltage
Base-Emitter
Turn-on Voltage
Static Forward Current
Transfer Ratio
-25
-40
Transition
Frequency
Collector-base
Capacitance
f
T
C
obo
SYMBOL
I
CBO
I
EBO
V
CE(sat)
V
BE(on)
h
FE
100
40
160
250
100
8.0
MIN. TYP. MAX. UNIT CONDITIONS.
-700
-1.2
600
400
600
mV
V
MHz
pF

*Measured under pulsed conditions. Pulse width=300 s. Duty cycle

-10


-0.1
-5
A
A
A
V
CB
=-20V, I
E
=0
V
CB
=-20V, I
E
=0, T
amb
=150°C
V
EB
=-5V, I
C
=0
I
C
=-500mA, I
B
=-50mA*
I
C
=-500mA, V
CE
=-1V*
I
C
=-100mA, V
CE
=-1V*
I
C
=-500mA, V
CE
=-1V*
I
C
=-100mA, V
CE
=-1V*
I
C
=-100mA, V
CE
=-1V*
I
C
=-10mA, V
CE
=-5V
f=35MHz
I
E
=I
e
=0, V
CB
=-10V
f=1MHz
2%


ZUMT807-25 Related Products

ZUMT807-25 ZUMT807-40
Description Small Signal Bipolar Transistor, 0.5A I(C), 45V V(BR)CEO, 1-Element, PNP, Silicon, SOT-323, 3 PIN Small Signal Bipolar Transistor, 0.5A I(C), 45V V(BR)CEO, 1-Element, PNP, Silicon, SOT-323, 3 PIN
Maker Diodes Incorporated Diodes Incorporated
Parts packaging code SC-70 SC-70
package instruction SMALL OUTLINE, R-PDSO-G3 SMALL OUTLINE, R-PDSO-G3
Contacts 3 3
Manufacturer packaging code SOT323 SOT323
Reach Compliance Code compliant compliant
ECCN code EAR99 EAR99
Maximum collector current (IC) 0.5 A 0.5 A
Collector-emitter maximum voltage 45 V 45 V
Configuration SINGLE SINGLE
Minimum DC current gain (hFE) 160 250
JESD-30 code R-PDSO-G3 R-PDSO-G3
Number of components 1 1
Number of terminals 3 3
Package body material PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR
Package form SMALL OUTLINE SMALL OUTLINE
Polarity/channel type PNP PNP
Certification status Not Qualified Not Qualified
surface mount YES YES
Terminal form GULL WING GULL WING
Terminal location DUAL DUAL
Transistor component materials SILICON SILICON
Nominal transition frequency (fT) 100 MHz 100 MHz
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