ZVP2110A datasheet, PDF - EEWORLD Datasheet

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ZVP2110A: DescriptionSmall Signal Field-Effect Transistor, 0.23A I(D), 100V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-92, 3 PIN; CategoryDiscrete semiconductor The transistor; File Size98KB，3 Pages; ManufacturerDiodes Incorporated; Environmental Compliance

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ZVP2110A Overview

Small Signal Field-Effect Transistor, 0.23A I(D), 100V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-92, 3 PIN

ZVP2110A Parametric

Parameter Name	Attribute value
Is it lead-free?	Lead free
Is it Rohs certified?	conform to
Maker	Diodes Incorporated
Parts packaging code	TO-92
package instruction	TO-92, 3 PIN
Contacts	3
Reach Compliance Code	compliant
ECCN code	EAR99
Factory Lead Time	17 weeks
Samacsys Description	P-channel MOSFET ZVP2110A 0.2A 100V
Configuration	SINGLE
Minimum drain-source breakdown voltage	100 V
Maximum drain current (Abs) (ID)	0.23 A
Maximum drain current (ID)	0.23 A
Maximum drain-source on-resistance	8 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
Maximum feedback capacitance (Crss)	10 pF
JESD-30 code	O-PBCY-W3
JESD-609 code	e3
Number of components	1
Number of terminals	3
Operating mode	ENHANCEMENT MODE
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	ROUND
Package form	CYLINDRICAL
Peak Reflow Temperature (Celsius)	260
Polarity/channel type	P-CHANNEL
Maximum power dissipation(Abs)	0.7 W
Certification status	Not Qualified
Guideline	CECC
surface mount	NO
Terminal surface	Matte Tin (Sn)
Terminal form	WIRE
Terminal location	BOTTOM
Maximum time at peak reflow temperature	40
transistor applications	SWITCHING
Transistor component materials	SILICON

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P-CHANNEL ENHANCEMENT

MODE VERTICAL DMOS FET

ISSUE 2 – MARCH 94

FEATURES

* 100 Volt V

DS

* R

DS(on)

=8Ω

ZVP2110A

D

G

S

E-Line

TO92 Compatible

ABSOLUTE MAXIMUM RATINGS.

PARAMETER

Drain-Source Voltage

Continuous Drain Current at T

amb

=25°C

Pulsed Drain Current

Gate Source Voltage

Power Dissipation at T

amb

=25°C

Operating and Storage Temperature Range

SYMBOL

V

DS

I

D

I

DM

V

GS

P

tot

T

j

:T

stg

VALUE

-100

-230

-3

±

20

700

-55 to +150

UNIT

V

mA

A

V

mW

°C

ELECTRICAL CHARACTERISTICS (at T

amb

= 25°C unless otherwise stated).

PARAMETER

Drain-Source Breakdown

Voltage

Gate-Source Threshold

Voltage

Gate-Body Leakage

Zero Gate Voltage Drain

Current

On-State Drain Current(1)

SYMBOL MIN.

BV

DSS

V

GS(th)

I

GSS

I

DSS

I

D(on)

-750

8

125

100

35

10

7

15

12

15

-100

-1.5

-3.5

20

-1

-100

MAX. UNIT CONDITIONS.

V

nA

µA

mA

Ω

mS

pF

ns

V

DD

≈-25V,

I

D

=-375mA

V

DS

=-25V, V

GS

=0V, f=1MHz

I

D

=-1mA, V

GS

=0V

ID=-1mA, V

DS

= V

GS

V

GS

=± 20V, V

DS

=0V

V

DS

=-100 V, V

GS

=0

V

DS

=-80 V, V

GS

=0V, T=125°C

(2)

V

DS

=-25 V, V

GS

=-10V

V

GS

=-10V,I

D

=-375mA

V

DS

=-25V,I

D

=-375mA

Static Drain-Source On-State R

DS(on)

Resistance (1)

Forward Transconductance

(1)(2)

Input Capacitance (2)

Common Source Output

Capacitance (2)

Reverse Transfer

Capacitance (2)

Turn-On Delay Time (2)(3)

Rise Time (2)(3)

Turn-Off Delay Time (2)(3)

Fall Time (2)(3)

g

fs

C

iss

C

oss

C

rss

t

d(on)

t

r

t

d(off)

t

f

(1) Measured under pulsed conditions. Width=300µs. Duty cycle

≤2%

(2) Sample test.

3-421

Switching times measured with 50Ω source impedance and <5ns rise time on a pulse generator

(

3

)

ZVP2110A Related Products

	ZVP2110A	ZVP2110ASTOB
Description	Small Signal Field-Effect Transistor, 0.23A I(D), 100V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-92, 3 PIN	230mA, 100V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-92 COMPATIBLE, E-LINE PACKAGE-3
Is it Rohs certified?	conform to	conform to
Maker	Diodes Incorporated	Diodes Incorporated
Parts packaging code	TO-92	TO-92
package instruction	TO-92, 3 PIN	TO-92 COMPATIBLE, E-LINE PACKAGE-3
Contacts	3	3
Reach Compliance Code	compliant	unknow

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