ZXM64P02X datasheet, PDF - EEWORLD Datasheet

ZXM64P02X: Description2400mA, 20V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, MSOP-8; CategoryDiscrete semiconductor The transistor; File Size39KB，1 Pages; ManufacturerDiodes Incorporated; Environmental Compliance

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ZXM64P02X Overview

2400mA, 20V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, MSOP-8

Parameter Name	Attribute value
Is it Rohs certified?	conform to
Maker	Diodes Incorporated
package instruction	SMALL OUTLINE, R-PDSO-G8
Reach Compliance Code	compliant
ECCN code	EAR99
Configuration	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	20 V
Maximum drain current (ID)	2.4 A
Maximum drain-source on-resistance	0.09 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
JESD-30 code	R-PDSO-G8
JESD-609 code	e3
Humidity sensitivity level	1
Number of components	1
Number of terminals	8
Operating mode	ENHANCEMENT MODE
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	260
Polarity/channel type	P-CHANNEL
Certification status	Not Qualified
surface mount	YES
Terminal surface	MATTE TIN
Terminal form	GULL WING
Terminal location	DUAL
Maximum time at peak reflow temperature	40
transistor applications	SWITCHING
Transistor component materials	SILICON

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