BT134W-800,115 datasheet, PDF - EEWORLD Datasheet

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BT134W-800,115: Description4 Quadrant Logic Level TRIAC, 800V V(DRM), 1A I(T)RMS, PLASTIC, SC-73, 4 PIN; CategoryAnalog mixed-signal IC Trigger device; File Size239KB，16 Pages; ManufacturerWeEn Semiconductors

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BT134W-800,115 Overview

4 Quadrant Logic Level TRIAC, 800V V(DRM), 1A I(T)RMS, PLASTIC, SC-73, 4 PIN

BT134W-800,115 Parametric

Parameter Name	Attribute value
Maker	WeEn Semiconductors
package instruction	SMALL OUTLINE, R-PDSO-G4
Reach Compliance Code	unknown
ECCN code	EAR99
Factory Lead Time	6 weeks
Shell connection	MAIN TERMINAL 2
Configuration	SINGLE
JESD-30 code	R-PDSO-G4
Number of components	1
Number of terminals	4
Maximum operating temperature	125 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Maximum rms on-state current	1 A
Guideline	IEC-60134
Off-state repetitive peak voltage	800 V
surface mount	YES
Terminal form	GULL WING
Terminal location	DUAL
Trigger device type	4 QUADRANT LOGIC LEVEL TRIAC

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BT134W-800

4Q Triac

14 June 2016

Product data sheet

1. General description

Planar passivated four quadrant triac in a SOT223 surface-mountable plastic package intended for

use in applications requiring high bidirectional transient and blocking voltage capability and high

thermal cycling performance.

2. Features and benefits

•

High blocking voltage capability

High noise immunity suitable for noisy applications

Planar passivated for voltage ruggedness and reliability

Surface-mountable package

Triggering in all four quadrants

3. Applications

•

General purpose low power motor control

General purpose switching and phase control

4. Quick reference data

Table 1. Quick reference data

Symbol

DRM

T(RMS)

TSM

Parameter

repetitive peak off-

state voltage

RMS on-state current

full sine wave; T

≤ 108 °C;

Fig. 1;

Fig. 2; Fig. 3

Conditions

Min

= 12 V; I

= 0.1 A; T2+ G+;

= 25 °C;

Fig. 9

= 12 V; I

= 0.1 A; T2+ G-;

= 25 °C;

Fig. 9

= 12 V; I

= 0.1 A; T2- G-;

= 25 °C;

Fig. 9

= 12 V; I

= 0.1 A; T2- G+;

= 25 °C;

Fig. 9

Typ

Max

800

125

Unit

°C

non-repetitive peak on- full sine wave; T

j(init)

= 25 °C;

= 20 ms;

Fig. 4; Fig. 5

state current

full sine wave; T

j(init)

= 25 °C;

= 16.7 ms

junction temperature

gate trigger current

Static characteristics

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