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NXP Semiconductors
Product data sheet
PNP high-voltage transistor
FEATURES
•
Low current (max. 100 mA)
•
High voltage (max. 100 V).
APPLICATIONS
•
High-voltage general purpose
•
Switching applications.
DESCRIPTION
handbook, halfpage
BSS63
PINNING
PIN
1
2
3
base
emitter
collector
DESCRIPTION
PNP high-voltage transistor in a SOT23 plastic package.
NPN complement: BSS64.
MARKING
TYPE NUMBER
BSS63
Note
1.
∗
= p : Made in Hong Kong.
∗
= t : Made in Malaysia.
∗
= W : Made in China.
ORDERING INFORMATION
PACKAGE
TYPE NUMBER
NAME
BSS63
−
DESCRIPTION
plastic surface mounted package; 3 leads
MARKING CODE
(1)
BM∗
Top view
3
3
1
2
1
2
MAM256
Fig.1 Simplified outline (SOT23) and symbol.
VERSION
SOT23
2004 Jan 16
2
NXP Semiconductors
Product data sheet
PNP high-voltage transistor
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
BM
P
tot
T
stg
T
j
T
amb
PARAMETER
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
peak collector current
peak base current
total power dissipation
storage temperature
junction temperature
operating ambient temperature
T
amb
≤
25
°C
CONDITIONS
open emitter
open base
open collector
−
−
−
−
−
−
−
−65
−
−65
MIN.
BSS63
MAX.
−110
−100
−6
−100
−100
−100
250
+150
150
+150
V
V
V
UNIT
mA
mA
mA
mW
°C
°C
°C
THERMAL CHARACTERISTICS
SYMBOL
R
th(j-a)
Note
1. Transistor mounted on an FR4 printed-circuit board.
CHARACTERISTICS
T
j
= 25
°C
unless otherwise specified.
SYMBOL
I
CBO
I
EBO
h
FE
V
CEsat
V
BEsat
C
c
f
T
PARAMETER
collector cut-off current
emitter cut-off current
DC current gain
collector-emitter saturation voltage
base-emitter saturation voltage
collector capacitance
transition frequency
CONDITIONS
I
E
= 0; V
CB
=
−90
V
I
E
= 0; V
CB
=
−90
V; T
j
= 150
°C
I
C
= 0; V
EB
=
−6
V
I
C
=
−10
mA; V
CE
=
−1
V
I
C
=
−25
mA; V
CE
=
−1
V
I
C
=
−25
mA; I
B
=
−2.5
mA
I
C
=
−25
mA; I
B
=
−2.5
mA
I
E
= i
e
= 0; V
CB
=
−10
V; f = 1 MHz
I
C
=
−25
mA; V
CE
=
−5
V;
f = 100 MHz
MIN.
−
−
−
30
30
−
−
−
50
TYP.
−
−
−
−
−
−
−
3
85
MAX. UNIT
−100
−50
−100
−
−
−250
−900
−
−
mV
mV
pF
MHz
nA
µA
nA
PARAMETER
thermal resistance from junction to ambient
CONDITIONS
note 1
VALUE
500
UNIT
K/W
2004 Jan 16
3
NXP Semiconductors
Product data sheet
PNP high-voltage transistor
PACKAGE OUTLINE
Plastic surface-mounted package; 3 leads
BSS63
SOT23
D
B
E
A
X
HE
v
M
A
3
Q
A
A1
1
e1
e
bp
2
w
M
B
detail X
Lp
c
0
1
scale
2 mm
DIMENSIONS (mm are the original dimensions)
UNIT
mm
A
1.1
0.9
A
1
max.
0.1
b
p
0.48
0.38
c
0.15
0.09
D
3.0
2.8
E
1.4
1.2
e
1.9
e
1
0.95
H
E
2.5
2.1
L
p
0.45
0.15
Q
0.55
0.45
v
0.2
w
0.1
OUTLINE
VERSION
SOT23
REFERENCES
IEC
JEDEC
TO-236AB
JEITA
EUROPEAN
PROJECTION
ISSUE DATE
04-11-04
06-03-16
2004 Jan 16
4
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