Important notice
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DISCRETE SEMICONDUCTORS
DATA SHEET
BF820; BF822
NPN high-voltage transistors
Product data sheet
Supersedes data of 1999 Apr 15
2004 Jan 16
NXP Semiconductors
Product data sheet
NPN high-voltage transistors
FEATURES
•
Low current (max. 50 mA)
•
High voltage (max. 300 V).
APPLICATIONS
•
Telephony and professional communication equipment.
DESCRIPTION
NPN high-voltage transistor in a SOT23 plastic package.
PNP complements: BF821; BF823.
MARKING
TYPE NUMBER
BF820
BF822
Note
1. * = p : Made in Hong Kong.
* = t : Made in Malaysia.
* = W : Made in China.
ORDERING INFORMATION
PACKAGE
TYPENUMBER
NAME
BF820
BF822
−
−
DESCRIPTION
plastic surface mounted package; 3 leads
plastic surface mounted package; 3 leads
MARKING CODE
(1)
1V*
1X*
Top view
handbook, halfpage
BF820; BF822
PINNING
PIN
1
2
3
base
emitter
collector
DESCRIPTION
3
3
1
2
1
2
MAM255
Fig.1 Simplified outline (SOT23) and symbol.
VERSION
SOT23
SOT23
2004 Jan 16
2
NXP Semiconductors
Product data sheet
NPN high-voltage transistors
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
V
CBO
BF820
BF822
V
CEO
collector-emitter voltage
BF820
BF822
V
EBO
I
C
I
CM
I
BM
P
tot
T
stg
T
j
T
amb
Note
1. Transistor mounted on an FR4 printed-circuit board.
THERMAL CHARACTERISTICS
SYMBOL
R
th(j-a)
Note
1. Transistor mounted on an FR4 printed-circuit board.
CHARACTERISTICS
T
j
= 25
°C
unless otherwise specified.
SYMBOL
I
CBO
I
EBO
h
FE
V
CEsat
C
re
f
T
PARAMETER
collector-base cut-off current
emitter-base cut-off current
DC current gain
collector-emitter saturation
voltage
feedback capacitance
transition frequency
CONDITIONS
I
E
= 0; V
CB
= 200 V
I
E
= 0; V
CB
= 200 V; T
j
=150
°C
I
C
= 0; V
EB
= 5 V
I
C
= 25 mA; V
CE
= 20 V
I
C
= 30 mA; I
B
= 5 mA
I
C
= I
c
= 0; V
CB
= 30 V; f = 1 MHz
I
C
= 10 mA; V
CE
= 10 V; f = 100 MHz
−
−
−
50
−
−
60
PARAMETER
thermal resistance from junction to ambient
CONDITIONS
note 1
emitter-base voltage
collector current (DC)
peak collector current
peak base current
total power dissipation
storage temperature
junction temperature
operating ambient temperature
T
amb
≤
25
°C;
note 1
open collector
open base
−
−
−
−
−
−
−
−65
−
−65
PARAMETER
collector-base voltage
CONDITIONS
open emitter
−
−
BF820; BF822
MIN.
MAX.
300
250
300
250
5
50
100
50
250
+150
150
+150
V
V
V
V
V
UNIT
mA
mA
mA
mW
°C
°C
°C
VALUE
500
UNIT
K/W
MIN.
MAX.
10
10
50
−
600
1.6
−
UNIT
nA
µA
nA
mV
pF
MHz
2004 Jan 16
3
NXP Semiconductors
Product data sheet
NPN high-voltage transistors
PACKAGE OUTLINE
Plastic surface-mounted package; 3 leads
BF820; BF822
SOT23
D
B
E
A
X
HE
v
M
A
3
Q
A
A1
1
e1
e
bp
2
w
M
B
detail X
Lp
c
0
1
scale
2 mm
DIMENSIONS (mm are the original dimensions)
UNIT
mm
A
1.1
0.9
A
1
max.
0.1
b
p
0.48
0.38
c
0.15
0.09
D
3.0
2.8
E
1.4
1.2
e
1.9
e
1
0.95
H
E
2.5
2.1
L
p
0.45
0.15
Q
0.55
0.45
v
0.2
w
0.1
OUTLINE
VERSION
SOT23
REFERENCES
IEC
JEDEC
TO-236AB
JEITA
EUROPEAN
PROJECTION
ISSUE DATE
04-11-04
06-03-16
2004 Jan 16
4
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