®
STU8NB90
N-CHANNEL 900V - 0.7Ω - 8.9A - Max220
PowerMESH™ MOSFET
ADVANCE DATA
TYPE
STU8NB90
s
s
s
s
s
s
V
DSS
900 V
R
DS(on)
<1
Ω
I
D
8.9 A
TYPICAL R
DS(on)
= 0.7
Ω
EXTREMELY HIGH dv/dt CAPABILITY
100% AVALANCHE TESTED
VERY LOW INTRINSIC CAPACITANCES
GATE CHARGE MINIMIZED
±
30V GATE TO SOURCE VOLTAGE RATING
1
2
3
DESCRIPTION
Using the latest high voltage MESH OVERLAY™
process, STMicroelectronics has designed an
advanced family of power MOSFETs with
outstanding performances. The new patent
pending strip layout coupled with the Company’s
proprietary edge termination structure, gives the
lowest R
DS(on)
per area, exceptional avalanche
and dv/dt capabilities and unrivalled gate charge
and switching characteristics.
APPLICATIONS
s
SWITCH MODE POWER SUPPLIES (SMPS)
s
DC-AC CONVERTERS FOR WELDING
EQUIPMENT AND UNINTERRUPTIBLE
POWER SUPPLIES AND MOTOR DRIVE
Max220
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
V
DS
V
DGR
V
GS
I
D
I
D
I
DM
(•)
P
tot
dv/dt(
1
)
T
stg
T
j
Parameter
Drain-source Voltage (V
GS
= 0)
Drain- gate Voltage (R
GS
= 20 kΩ)
Gate-source Voltage
Drain Current (continuous) at T
c
= 25
o
C
Drain Current (continuous) at T
c
= 100
o
C
Drain Current (pulsed)
Total Dissipation at T
c
= 25 C
Derating Factor
Peak Diode Recovery voltage slope
Storage Temperature
Max. Operating Junction Temperature
o
Value
900
900
±
30
8.9
5.6
35
160
1.28
4.5
-65 to 150
150
(
1
) I
SD
≤8.9
A, di/dt
≤
200 A/µs, V
DD
≤
V
(BR)DSS
, Tj
≤
T
JMAX
Unit
V
V
V
A
A
A
W
W/
o
C
V/ns
o
o
C
C
1/5
(•) Pulse width limited by safe operating area
December 1998
This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice.
STSTU8NB90
THERMAL DATA
R
thj-case
Rthj-amb
R
thc-sink
T
l
Thermal Resistance Junction-case
Max
Thermal Resistance Junction-ambient
Max
Thermal Resistance Case-sink
Typ
Maximum Lead Temperature For Soldering Purpose
0.78
62.5
0.5
300
C/W
oC/W
o
C/W
o
C
o
AVALANCHE CHARACTERISTICS
Symbol
I
AR
E
AS
Parameter
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by T
j
max)
Single Pulse Avalanche Energy
(starting T
j
= 25
o
C, I
D
= I
AR
, V
DD
= 50 V)
Max Value
8.9
400
Unit
A
mJ
ELECTRICAL CHARACTERISTICS
(T
case
= 25
o
C unless otherwise specified)
OFF
Symbol
V
(BR)DSS
I
DSS
I
GSS
Parameter
Drain-source
Breakdown Voltage
Test Conditions
I
D
= 250
µA
V
GS
= 0
Min.
900
1
50
±
100
Typ.
Max.
Unit
V
µA
µA
nA
Zero Gate Voltage
V
DS
= Max Rating
Drain Current (V
GS
= 0) V
DS
= Max Rating
Gate-body Leakage
Current (V
DS
= 0)
V
GS
=
±
30 V
T
c
= 125 C
o
ON (∗)
Symbol
V
GS(th)
R
DS(on)
I
D(on)
Parameter
Gate Threshold
Voltage
Static Drain-source On
Resistance
V
DS
= V
GS
V
GS
= 10V
Test Conditions
I
D
= 250
µA
I
D
=4.8 A
8.9
Min.
3
Typ.
4
0.7
Max.
5
1
Unit
V
Ω
A
On State Drain Current V
DS
> I
D(on)
x R
DS(on)max
V
GS
= 10 V
DYNAMIC
Symbol
g
fs
(∗)
C
iss
C
oss
C
rss
Parameter
Forward
Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
Test Conditions
V
DS
> I
D(on)
x R
DS(on)max
V
DS
= 25 V
f = 1 MHz
I
D
=4.8 A
V
GS
= 0
Min.
1.5
2800
290
25
Typ.
Max.
Unit
S
pF
pF
pF
2/5
STSTU8NB90
ELECTRICAL CHARACTERISTICS
(continued)
SWITCHING ON
Symbol
t
d(on)
t
r
Q
g
Q
gs
Q
gd
Parameter
Turn-on Time
Rise Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Test Conditions
V
DD
= 450 V
R
G
= 4.7
Ω
V
DD
= 720 V
I
D
=4.5 A
V
GS
= 10 V
I
D
= 9 A V
GS
= 10 V
Min.
Typ.
30
13
64
16
26
Max.
Unit
ns
ns
nC
nC
nC
SWITCHING OFF
Symbol
t
r(Voff)
t
f
t
c
Parameter
Off-voltage Rise Time
Fall Time
Cross-over Time
Test Conditions
V
DD
= 720 V I
D
= 9 A
R
G
= 4.7
Ω
V
GS
= 10 V
Min.
Typ.
26
26
35
Max.
Unit
ns
ns
ns
SOURCE DRAIN DIODE
Symbol
I
SD
I
SDM
(•)
V
SD
(∗)
t
rr
Q
rr
I
RRM
Parameter
Source-drain Current
Source-drain Current
(pulsed)
Forward On Voltage
Reverse Recovery
Time
Reverse Recovery
Charge
Reverse Recovery
Current
I
SD
= 8.9 A
V
GS
= 0
1000
11
23
I
SD
= 9 A di/dt = 100 A/µs
V
DD
= 100 V
T
j
= 150
o
C
Test Conditions
Min.
Typ.
Max.
8.9
35
1.6
Unit
A
A
V
ns
µC
A
(∗) Pulsed: Pulse duration = 300
µs,
duty cycle 1.5 %
(•) Pulse width limited by safe operating area
3/5
STSTU8NB90
Max220 MECHANICAL DATA
DIM.
MIN.
A
A1
A2
b
b1
b2
c
D
D1
D2
D3
e
E
L
L1
4.3
2.2
2.9
0.7
1.25
1.2
0.45
15.9
9
0.8
2.8
2.44
10.05
13.2
3
mm
TYP.
MAX.
4.6
2.4
3.1
0.93
1.4
1.38
0.6
16.3
9.35
1.2
3.2
2.64
10.35
13.6
3.4
0.354
0.031
0.110
0.096
0.396
0.520
0.118
MIN.
0.169
0.087
0.114
0.027
0.049
0.047
0.18
0.626
inch
TYP.
MAX.
0.181
0.094
0.122
0.036
0.055
0.054
0.023
0.641
0.368
0.047
0.126
0.104
0.407
0.535
0.133
D3
D2
D1
C
A
A2
D
b1
b2
b
e
E
L1
L
A1
P011R
4/5
STSTU8NB90
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is
granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are
subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products
are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
The ST logo is a registered trademark of STMicroelectronics
© 1998 STMicroelectronics – Printed in Italy – All Rights Reserved
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