5 GHz DIVIDE-BY-4
STATIC PRESCALER
UPG501B
FEATURES
•
•
•
•
•
WIDE OPERATING FREQUENCY RANGE:
f
IN
= 1.5 GHz to 5 GHz (T
A
= 25°C)
SINGLE SUPPLY VOLTAGE:
V
DD
= +10 V
Input Power, P
IN
(dBm)
INPUT POWER vs. INPUT FREQUENCY
+20
+15
+10
+5
0
-5
-10
-15
-20
V
DD
= +10 V
T
A
= -25˚C
T
A
= +25˚C
T
A
= +75˚C
0
1
2
3
4
5
6
7
Recommended
Operating Region
DIVISION RATIO OF 4
HIGH RELIABILITY HERMETICALLY SEALED
PACKAGE
GUARANTEED PERFORMANCE OVER AN AMBIENT
TEMPERATURE RANGE:
-25°C to +75°C
DESCRIPTION
The UPG501B is a GaAs divide-by-4 prescaler that is capable
of operating up to 5 GHz. It is intended to be used in frequency
synthesizers of microwave communications systems and
measurement equipment. The UPG501B is a static divider
with two (2) master-slave D-type flip-flops using Source-
Coupled-FET-Logic (SCFL). It operates from a single supply
voltage. The UPG501B is housed in a hermetically sealed 8-
lead ceramic flat package that is easy to use and provides high
reliability.
Input Frequency, f (GHz)
ELECTRICAL CHARACTERISTICS
(T
A
= -25°C to +75°C, V
DD
= 10 V, V
GG
= Open)
UPG501B
BF08
UNITS
mA
GHz
GHz
dBm
dBm
dBm
°C/W
10.0
6.0
-1.0
2.0
16
MIN
50
5.0
TYP
70
5.3
0.7
1.5
13.0
13.0
MAX
90
PART NUMBER
PACKAGE OUTLINE
SYMBOLS
I
DD
f
IN(U)
f
IN(L)
P
IN
PARAMETERS AND CONDITIONS
Supply Current
Upper Limit of Input Frequency
Lower Limit of Input Frequency
Input Power,
f
IN
= 4.5 to 5 GHz
f
IN
= 1.5 to 4.5 GHz
Output Power at f
IN
= 5 GHz
Thermal Resistance (Channel to Case)
P
OUT
R
TH(CH-C)
California Eastern Laboratories
UPG501B
ABSOLUTE MAXIMUM RATINGS
1
SYMBOLS
V
DD
I
DD
P
T
P
IN
T
OP
T
STG
PARAMETERS
Supply Voltage
Supply Current
Total Power Dissipation
2
Input Power
Operating Temperature
Storage Temperature
UNITS
V
mA
W
dBm
°C
°C
(T
A
= 25°C)
RATINGS
+12
150
1.5
+20
-65 to +125
-65 to +175
V
DD
(+10 V)
OUT
2
3
4
1000 pF
TEST CIRCUIT
1000 pF
1
8
7
6
5
1000 pF
V
GG
(Normally
Open)
See Note
1000 pF
Notes:
1. Operation in excess of any one of these conditions may result in
permanent damage.
2. T
C
≤
125°C
TYPICAL PERFORMANCE CURVES
(T
A
= 25°C)
SSB PHASE NOISE vs.
OFFSET FROM CARRIER
f
IN
= 3.41 GHz, T
A
= 25°C
-70
Note: Because of the high internal gain and gain compression of the
UPG501B, the device is subject to self-oscillation in the absence of
IN
an RF input signal. This self-oscillation can be suppressed by either
of the following means:
• Add a shunt resistor to the RF input line. Typically a resistor
value between 50 and 1000 ohms will suppress the self-
oscillation (see the test circuit).
• Apply a negative voltage through a 1000 ohm resistor to the
normally open V
GG
connection. Typically voltages between 0 and
-9 volts will suppress the self-oscillation.
Both of these approaches will reduce the input sensitivity of the
device (by as much as 3 dB for a 50 ohm shunt resistor), but
otherwise have no effect on the reliability or other electrical character-
istics of the device.
OUTPUT POWER vs. INPUT FREQUENCY
+20
+15
+10
+5
0
-5
-10
-15
-20
V
DD
= +10V
SSB Phase Noise (dBc/Hz)
-90
-100
-110
-120
-130
-140
-150
-160
10
100
1K
10K
100K
1M
Output Power, P
OUT
(dBm)
-80
T
A
= -25°C
T
A
= +25°C
T
A
= +75°C
0
1
2
3
4
5
6
7
Offset from Carrier (Hz)
POWER DERATING CURVE
2.5
Input Frequency, f
IN
(GHz)
OUTLINE DIMENSIONS
(Units in mm)
UPG501B
PACKAGE OUTLINE BF08
7.0±0.5
1.27 1.27 1.27
±0.1 ±0.1 ±0.1
Total Power Dissipation, P
T
(W)
2.0
1.7 MAX
LEAD
5
1.5
8
7
6
CONNECTIONS:
1. OUTPUT
2. NC*
10.4±0.5
2.6
4.4±0.2
1.0
Tcase MAX = 125˚C
0.5
0
0
50
100 110
150
200
250
1
2
0.4
5.0±0.2
3
4
+0.05
0.2
-0.02
3.
4.
5.
6.
7.
NC*
V
DD
INPUT
V
GG
NC*
Case Temperature, T
C
(°C)
8. GND
FLANGE, GND
* No connection
EXCLUSIVE AGENT FOR
NEC Corporation
RF & MICROWAVE SEMICONDUCTOR PRODUCTS - U.S. & CANADA
CALIFORNIA EASTERN LABORATORIES, INC
·
Headquarters
·
4590 Patrick Henry Drive
·
Santa Clara, CA 95054-1817
·
(408) 988-3500
·
Telex 34-6393/FAX (408) 988-0279
DATA SUBJECT TO CHANGE WITHOUT NOTICE
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