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BC558

Description
PNP general purpose transistors
Categorysemiconductor    Discrete semiconductor   
File Size276KB,4 Pages
ManufacturerMCC
Websitehttp://www.mccsemi.com
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BC558 Overview

PNP general purpose transistors

MCC
Features
l
Through Hole Package
l
150
o
C Junction Temperature
Pin Configuration
Bottom View
  omponents
21201 Itasca Street Chatsworth

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$ %    !"#
BC556,B
BC557,A,B,C
BC558,B
PNP Silicon
Amplifier Transistor
C
B
E
625mW
A
Mechanical Data
l
Case: TO-92, Molded Plastic
l
Polarity: indicated as above.
TO-92
E
B
Maximum Ratings @ 25
o
C Unless Otherwise Specified
Charateristic
Collector-Emitter Voltage
Collector-Base Voltage
BC556
BC557
BC558
BC556
BC557
BC558
Symbol Value
-65
V
CEO
-45
-30
-80
V
CBO
-50
-30
V
EBO
-5.0
I
C
P
d
P
d
R
q
JA
Unit
V
V
V
mA
mW
mW/
o
C
W
mW/
o
C
o
D
C
Emitter-Base Voltage
Collector Current(DC)
Power Dissipation@T
A
=25
o
C
Power Dissipation@T
C
=25
o
C
Thermal Resistance, Junction to
Ambient Air
Thermal Resistance, Junction to
Case
Operating & Storage Temperature
-100
625
5.0
1.5
12
200
83.3
G
DIMENSIONS
C/W
C/W
o
DIM
A
B
C
D
E
G
R
q
JC
o
T
j
, T
STG
-55~150
C
INCHES
MIN
.175
.175
.500
.016
.135
.095
MAX
.185
.185
---
.020
.145
.105
MM
MIN
4.45
4.46
12.7
0.41
3.43
2.42
MAX
4.70
4.70
---
0.63
3.68
2.67
NOTE
www.mccsemi.com

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BC558 557B 558B BC557 BC557A BC556 BC556B
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