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BC559B

Description
PNP general purpose transistor
CategoryDiscrete semiconductor    The transistor   
File Size67KB,4 Pages
ManufacturerMotorola ( NXP )
Websitehttps://www.nxp.com
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BC559B Overview

PNP general purpose transistor

BC559B Parametric

Parameter NameAttribute value
MakerMotorola ( NXP )
package instructionCYLINDRICAL, O-PBCY-T3
Reach Compliance Codeunknow
Is SamacsysN
Other featuresLOW NOISE
Maximum collector current (IC)0.1 A
Collector-emitter maximum voltage30 V
ConfigurationSINGLE
Minimum DC current gain (hFE)180
JEDEC-95 codeTO-92
JESD-30 codeO-PBCY-T3
JESD-609 codee0
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeROUND
Package formCYLINDRICAL
Polarity/channel typePNP
Maximum power consumption environment1.5 W
Maximum power dissipation(Abs)0.625 W
Certification statusNot Qualified
surface mountNO
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formTHROUGH-HOLE
Terminal locationBOTTOM
transistor applicationsAMPLIFIER
Transistor component materialsSILICON
Nominal transition frequency (fT)250 MHz
VCEsat-Max0.6 V
Base Number Matches1
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Low Noise Transistors
Order this document
by BC559/D
PNP Silicon
COLLECTOR
1
2
BASE
3
EMITTER
BC559, B, C
BC560C
MAXIMUM RATINGS
Rating
Collector – Emitter Voltage
Collector – Base Voltage
Emitter – Base Voltage
Collector Current — Continuous
Total Device Dissipation @ TA = 25°C
Derate above 25°C
Total Device Dissipation @ TC = 25°C
Derate above 25°C
Operating and Storage Junction
Temperature Range
Symbol
VCEO
VCBO
VEBO
IC
PD
PD
TJ, Tstg
BC559
–30
–30
–5.0
–100
625
5.0
1.5
12
– 55 to +150
BC560
–45
–50
Unit
Vdc
Vdc
Vdc
mAdc
mW
mW/°C
Watt
mW/°C
°C
1
2
3
CASE 29–04, STYLE 17
TO–92 (TO–226AA)
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Case
Symbol
R
q
JA
R
q
JC
Max
200
83.3
Unit
°C/W
°C/W
ELECTRICAL CHARACTERISTICS
(TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector – Emitter Breakdown Voltage
(IC = –10 mAdc, IB = 0)
Collector – Base Breakdown Voltage
(IC = –10
µAdc,
IE = 0)
Emitter – Base Breakdown Voltage
(IE = –10
m
Adc, IC = 0)
Collector Cutoff Current
(VCB = –30 Vdc, IE = 0)
(VCB = –30 Vdc, IE = 0, TA = +125°C)
Emitter Cutoff Current
(VEB = –4.0 Vdc, IC = 0)
V(BR)CEO
BC559
BC560
V(BR)CBO
BC559
BC560
V(BR)EBO
ICBO
IEBO
–15
–5.0
–15
nAdc
µAdc
nAdc
–30
–50
–5.0
Vdc
–30
–45
Vdc
Vdc
REV 1
Motorola Small–Signal Transistors, FETs and Diodes Device Data
©
Motorola, Inc. 1996
1

BC559B Related Products

BC559B BC559 BC559C BC560C
Description PNP general purpose transistor PNP general purpose transistor PNP general purpose transistor 100 mA, 45 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92
Maker Motorola ( NXP ) Motorola ( NXP ) Motorola ( NXP ) Motorola ( NXP )
package instruction CYLINDRICAL, O-PBCY-T3 CYLINDRICAL, O-PBCY-T3 CYLINDRICAL, O-PBCY-T3 CYLINDRICAL, O-PBCY-T3
Reach Compliance Code unknow unknow unknow unknow
Other features LOW NOISE LOW NOISE LOW NOISE LOW NOISE
Maximum collector current (IC) 0.1 A 0.1 A 0.1 A 0.1 A
Collector-emitter maximum voltage 30 V 30 V 30 V 45 V
Configuration SINGLE SINGLE SINGLE SINGLE
Minimum DC current gain (hFE) 180 120 380 380
JEDEC-95 code TO-92 TO-92 TO-92 TO-92
JESD-30 code O-PBCY-T3 O-PBCY-T3 O-PBCY-T3 O-PBCY-T3
JESD-609 code e0 e0 e0 e0
Number of components 1 1 1 1
Number of terminals 3 3 3 3
Maximum operating temperature 150 °C 150 °C 150 °C 150 °C
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape ROUND ROUND ROUND ROUND
Package form CYLINDRICAL CYLINDRICAL CYLINDRICAL CYLINDRICAL
Polarity/channel type PNP PNP PNP PNP
Maximum power consumption environment 1.5 W 1.5 W 1.5 W 1.5 W
Maximum power dissipation(Abs) 0.625 W 0.625 W 0.625 W 0.625 W
Certification status Not Qualified Not Qualified Not Qualified Not Qualified
surface mount NO NO NO NO
Terminal surface Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb)
Terminal form THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE
Terminal location BOTTOM BOTTOM BOTTOM BOTTOM
transistor applications AMPLIFIER AMPLIFIER AMPLIFIER AMPLIFIER
Transistor component materials SILICON SILICON SILICON SILICON
Nominal transition frequency (fT) 250 MHz 250 MHz 250 MHz 250 MHz
VCEsat-Max 0.6 V 0.6 V 0.6 V 0.6 V

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