STTH802C
High efficiency ultrafast diode
Datasheet
-
production data
Description
Dual center tap rectifier suited for switched mode
power supply and high frequency DC to DC
converters.
Packaged in DPAK, this device is intended for use
in low voltage, high frequency inverters,
freewheeling and polarity protection applications.
Table 1. Device summary
Symbol
I
F(AV)
V
RRM
T
j
(max)
Value
2X4A
200 V
175 °C
0.81 V
13 ns
Features
Suited for SMPS
Low losses
Low forward and reverse recovery time
High surge current capability
High junction temperature
ECOPACK
®
2 compliant component for DPAK
on demand
V
F
(typ.)
t
rr
(typ.)
November 2016
This is information on a product in full production.
DocID8723 Rev 3
1/9
www.st.com
Characteristics
STTH802C
1
Characteristics
Table 2. Absolute ratings (limiting values at T
j
= 25 °C per diode, unless otherwise specified)
Symbol
V
RRM
I
F(RMS)
I
F(AV)
I
FSM
T
stg
T
j
Repetitive peak reverse voltage
Forward rms current
Average forward current,
= 0.5, square wave
Parameter
Value
200
10
Unit
V
A
A
T
c
= 155 °C
T
c
= 150 °C
Per diode
Per device
t
p
= 10 ms sinusoidal
4
8
50
-65 to +175
175
A
°C
°C
Surge non repetitive forward current
Storage temperature range
Maximum operating junction temperature
Table 3. Thermal resistances
Symbol
R
th(j-c)
R
th(c)
Junction to case
Total
Coupling
2.5
1.0
°C/W
Parameter
Per diode
Max. value
4
Unit
When the diodes 1 and 2 are used simultaneously:
T
j
(diode 1) = P(diode1) x R
th(j-c)
(Per diode) + P(diode 2) x R
th(c)
Table 4. Static electrical characteristics (per diode)
Symbol
I
R(1)
Parameter
Reverse leakage current
Test conditions
T
j
= 25 °C
T
j
= 125 °C
T
j
= 25 °C
V
F(2)
Forward voltage drop
T
j
= 125 °C
T
j
= 25 °C
T
j
= 125 °C
1. Pulse test: t
p
= 5 ms,
< 2%
2. Pulse test: t
p
= 380 µs,
< 2%
Min.
-
Typ.
Max.
4
Unit
µA
V
R
= V
RRM
-
-
2
40
1.10
I
F
= 4 A
-
-
0.81
0.95
V
1.25
I
F
= 8 A
-
0.95
1.10
To evaluate the conduction losses, use the following equation:
P = 0.80 x I
F(AV)
+ 0.037 x I
F2(RMS)
2/9
DocID8723 Rev 3
STTH802C
Table 5. Dynamic characteristics (per diode)
Symbol
t
rr
Parameter
Reverse recovery time
Test conditions
I
F
= 0.5 A
I
RR
= 0.25 A
I
R
= 1 A
T
j
= 25 °C
I
F
= 4 A
dI
F
/dt = 100 A/µs
V
FR
= 1.1 x V
Fmax
I
F
= 4A
dI
F
/dt = 100 A/µs
Min.
-
Characteristics
Typ.
13
Max.
20
Unit
ns
t
fr
Forward recovery time
-
50
ns
V
FP
Forward recovery voltage
-
2.4
V
DocID8723 Rev 3
3/9
9
Characteristics
STTH802C
Figure 1. Average forward power dissipation
versus average forward current (per diode)
Figure 2. Forward voltage drop versus forward
current (per diode)
Figure 3. Relative variation of thermal
impedance, junction to case, versus pulse
duration
Figure 4. Junction capacitance versus reverse
applied voltage
(typical values, per diode)
Figure 5. Reverse recovery charges versus
dI
F
/dt (typical values, per diode)
Figure 6. Peak reverse recovery current versus
dI
F
/dt (typical values, per diode)
4/9
DocID8723 Rev 3
STTH802C
Characteristics
Figure 7. Dynamic parameters versus junction
temperature (reference: T
j
= 125 °C)
Figure 8. Thermal resistance, junction to
ambient, versus copper surface under tab
DocID8723 Rev 3
5/9
9
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