MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by BC618/D
Darlington Transistors
NPN Silicon
COLLECTOR 1
BASE
2
BC618
EMITTER 3
1
2
3
MAXIMUM RATINGS
Rating
Collector – Emitter Voltage
Collector – Base Voltage
Emitter – Base Voltage
Collector Current — Continuous
Total Device Dissipation @ TA = 25°C
Derate above 25°C
Total Device Dissipation @ TC = 25°C
Derate above 25°C
Operating and Storage Junction
Temperature Range
Symbol
VCEO
VCBO
VEBO
IC
PD
PD
TJ, Tstg
Value
55
80
12
1.0
625
5.0
1.5
12
– 55 to +150
Unit
Vdc
Vdc
Vdc
Adc
mW
mW/°C
Watts
mW/°C
°C
CASE 29–04, STYLE 17
TO–92 (TO–226AA)
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to
Ambient
Thermal Resistance, Junction to Case
Symbol
R
q
JA
R
q
JC
Max
200
83.3
Unit
°C/W
°C/W
ELECTRICAL CHARACTERISTICS
(TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector – Emitter Breakdown Voltage
(IC = 10 mAdc, VBE = 0)
Collector – Base Breakdown Voltage
(IC = 100
m
Adc, IE = 0)
Emitter – Base Breakdown Voltage
(IE = 10
m
Adc, IC = 0)
Collector Cutoff Current
(VCE = 60 Vdc, VBE = 0)
Collector Cutoff Current
(VCB = 60 Vdc, IE = 0)
Emitter Cutoff Current
(VEB = 10 Vdc, IC = 0)
V(BR)CEO
V(BR)CBO
V(BR)EBO
ICES
ICBO
IEBO
55
80
12
—
—
—
—
—
—
—
—
—
—
—
—
50
50
50
Vdc
Vdc
Vdc
nAdc
nAdc
nAdc
Motorola Small–Signal Transistors, FETs and Diodes Device Data
©
Motorola, Inc. 1996
1
BC618
ELECTRICAL CHARACTERISTICS
(TA = 25°C unless otherwise noted) (Continued)
Characteristic
Symbol
Min
Typ
Max
Unit
ON CHARACTERISTICS
Collector – Emitter Saturation Voltage
(IC = 200 mA, IB = 0.2 mA)
Base – Emitter Saturation Voltage
(IC = 200 mA, IB = 0.2 mA)
DC Current Gain
(IC = 100
µA,
VCE = 5.0 Vdc)
(IC = 10 mA, VCE = 5.0 Vdc)
(IC = 200 mA, VCE = 5.0 Vdc)
(IC = 1.0 A, VCE = 5.0 Vdc)
VCE(sat)
VBE(sat)
hFE
2000
4000
10000
4000
—
—
—
—
—
—
50000
—
—
—
—
—
1.1
1.6
Vdc
Vdc
—
DYNAMIC CHARACTERISTICS
Current – Gain — Bandwidth Product
(IC = 500 mA, VCE = 5.0 Vdc, P = 100 MHz)
Output Capacitance
(VCB = 10 V, IE = 0, f = 1.0 MHz)
Input Capacitance
(VEB = 5.0 V, IE = 0, f = 1.0 MHz)
fT
Cob
Cib
150
—
—
—
4.5
5.0
—
7.0
9.0
MHz
pF
pF
RS
in
en
IDEAL
TRANSISTOR
Figure 1. Transistor Noise Model
2
Motorola Small–Signal Transistors, FETs and Diodes Device Data
BC618
NOISE CHARACTERISTICS
(VCE = 5.0 Vdc, TA = 25°C)
500
200
en, NOISE VOLTAGE (nV)
100
10
µA
50
100
µA
20
IC = 1.0 mA
10
5.0
10 20
50 100 200
500 1 k 2 k 5 k 10 k 20 k
f, FREQUENCY (Hz)
50 k 100 k
BANDWIDTH = 1.0 Hz
RS
≈
0
i n, NOISE CURRENT (pA)
2.0
BANDWIDTH = 1.0 Hz
1.0
0.7
0.5
0.3
0.2
0.1
0.07
0.05
0.03
0.02
10 20
50 100 200
500 1 k 2 k 5 k 10 k 20 k
f, FREQUENCY (Hz)
50 k 100 k
100
µA
10
µA
IC = 1.0 mA
Figure 2. Noise Voltage
Figure 3. Noise Current
VT, TOTAL WIDEBAND NOISE VOLTAGE (nV)
200
14
BANDWIDTH = 10 Hz TO 15.7 kHz
12
NF, NOISE FIGURE (dB)
100
70
50
30
20
BANDWIDTH = 10 Hz TO 15.7 kHz
IC = 10
µA
10
10
µA
8.0
6.0
4.0
2.0
0
1.0
IC = 1.0 mA
100
µA
100
µA
1.0 mA
10
1.0
2.0
5.0
10
20
50 100 200
RS, SOURCE RESISTANCE (kΩ)
500
100
0
2.0
5.0
10
20
50 100 200
RS, SOURCE RESISTANCE (kΩ)
500
100
0
Figure 4. Total Wideband Noise Voltage
Figure 5. Wideband Noise Figure
Motorola Small–Signal Transistors, FETs and Diodes Device Data
3
BC618
SMALL–SIGNAL CHARACTERISTICS
20
TJ = 25°C
C, CAPACITANCE (pF)
10
7.0
5.0
Cibo
Cobo
|h fe |, SMALL–SIGNAL CURRENT GAIN
4.0
VCE = 5.0 V
f = 100 MHz
TJ = 25°C
2.0
1.0
0.8
0.6
0.4
3.0
2.0
0.04
0.1
0.2
0.4
1.0 2.0 4.0
10
VR, REVERSE VOLTAGE (VOLTS)
20
40
0.2
0.5
1.0
2.0
0.5 10 20
50
100 200
IC, COLLECTOR CURRENT (mA)
500
Figure 6. Capacitance
Figure 7. High Frequency Current Gain
200 k
TJ = 125°C
hFE, DC CURRENT GAIN
100 k
70 k
50 k
30 k
20 k
10 k
7.0 k
5.0 k
3.0 k
2.0 k
5.0 7.0
10
20 30
50 70 100
200 300
IC, COLLECTOR CURRENT (mA)
500
VCE , COLLECTOR–EMITTER VOLTAGE (VOLTS)
3.0
TJ = 25°C
2.5
IC = 10 mA
2.0
50 mA
250 mA
500 mA
25°C
1.5
– 55°C
VCE = 5.0 V
1.0
0.5
0.1 0.2
0.5 1.0 2.0 5.0 10 20 50 100 200
IB, BASE CURRENT (µA)
500 1000
Figure 8. DC Current Gain
Figure 9. Collector Saturation Region
R
θ
V, TEMPERATURE COEFFICIENTS (mV/
°
C)
1.6
TJ = 25°C
1.4
V, VOLTAGE (VOLTS)
VBE(sat) @ IC/IB = 1000
1.2
VBE(on) @ VCE = 5.0 V
1.0
– 1.0
*APPLIES FOR IC/IB
≤
hFE/3.0
*R
q
VC FOR VCE(sat)
25°C TO 125°C
– 2.0
– 55°C TO 25°C
– 3.0
25°C TO 125°C
– 4.0
q
VB FOR VBE
– 5.0
– 55°C TO 25°C
0.8
VCE(sat) @ IC/IB = 1000
0.6
5.0 7.0
10
20 30
50 70 100 200 300
IC, COLLECTOR CURRENT (mA)
500
– 6.0
5.0 7.0 10
20 30
50 70 100
200 300
IC, COLLECTOR CURRENT (mA)
500
Figure 10. “On” Voltages
Figure 11. Temperature Coefficients
4
Motorola Small–Signal Transistors, FETs and Diodes Device Data
BC618
r(t), TRANSIENT THERMAL
RESISTANCE (NORMALIZED)
1.0
0.7
0.5
0.3
0.2
0.1
0.1
0.07
0.05
0.03
0.02
0.01
0.1
0.05
SINGLE PULSE
D = 0.5
0.2
SINGLE PULSE
Z
θJC(t)
= r(t)
•
R
θJC
TJ(pk) – TC = P(pk) Z
θJC(t)
Z
θJA(t)
= r(t)
•
R
θJA
TJ(pk) – TA = P(pk) Z
θJA(t)
0.2
0.5
1.0
2.0
5.0
10
20
50
t, TIME (ms)
100
200
500
1.0 k
2.0 k
5.0 k
10 k
Figure 12. Thermal Response
IC, COLLECTOR CURRENT (mA)
1.0 k
700
500
300
200
100
70
50
30
20
10
0.4 0.6
CURRENT LIMIT
THERMAL LIMIT
SECOND BREAKDOWN LIMIT
TA = 25°C
TC = 25°C
1.0 ms
100
µs
FIGURE A
tP
1.0 s
PP
PP
t1
1/f
DUTY CYCLE
1.0
2.0
4.0 6.0
10
20
VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)
40
1
+
t1 f
+
ttP
PEAK PULSE POWER = PP
Figure 13. Active Region Safe Operating Area
Design Note: Use of Transient Thermal Resistance Data
Motorola Small–Signal Transistors, FETs and Diodes Device Data
5
京公网安备 11010802033920号
EEWORLD
