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BD239C

Description
Power Bipolar Transistor, 2A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin, PLASTIC, TO-220, 3 PIN
CategoryDiscrete semiconductor    The transistor   
File Size89KB,1 Pages
ManufacturerCDIL[Continental Device India Pvt. Ltd.]
Environmental Compliance
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BD239C Overview

Power Bipolar Transistor, 2A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin, PLASTIC, TO-220, 3 PIN

BD239C Parametric

Parameter NameAttribute value
Is it lead-free?Contains lead
Is it Rohs certified?conform to
MakerCDIL[Continental Device India Pvt. Ltd.]
Parts packaging codeSFM
package instructionFLANGE MOUNT, R-PSFM-T3
Contacts3
Reach Compliance Codecompliant
ECCN codeEAR99

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Parts packaging code SFM SFM SFM SFM SFM SFM SFM
package instruction FLANGE MOUNT, R-PSFM-T3 TO-220, 3 PIN FLANGE MOUNT, R-PSFM-T3 TO-220, 3 PIN FLANGE MOUNT, R-PSFM-T3 FLANGE MOUNT, R-PSFM-T3 FLANGE MOUNT, R-PSFM-T3
Contacts 3 3 3 3 3 3 3
Reach Compliance Code compliant compli compli compli compli compli compliant
Is it Rohs certified? conform to - incompatible incompatible incompatible incompatible conform to
ECCN code EAR99 EAR99 - EAR99 EAR99 - EAR99
Maximum collector current (IC) - 7 A 7 A 3 A 5 A 7 A 3 A
Collector-emitter maximum voltage - 120 V 400 V 55 V 70 V 400 V 80 V
Configuration - SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE
Minimum DC current gain (hFE) - 25 10 70 20 8 10
JEDEC-95 code - TO-220AB TO-220AB TO-220AB TO-220AB TO-220AB TO-220AB
JESD-30 code - R-PSFM-T3 R-PSFM-T3 R-PSFM-T3 R-PSFM-T3 R-PSFM-T3 R-PSFM-T3
Number of components - 1 1 1 1 1 1
Number of terminals - 3 3 3 3 3 3
Package body material - PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape - RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
Package form - FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT
Polarity/channel type - NPN NPN NPN NPN NPN NPN
Maximum power consumption environment - 40 W 40 W 25 W 40 W 50 W 40 W
Certification status - Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified
surface mount - NO NO NO NO NO NO
Terminal form - THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE
Terminal location - SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE
Transistor component materials - SILICON SILICON SILICON SILICON SILICON SILICON
VCEsat-Max - 2 V 1 V 1 V 1 V 1 V 1.2 V
Base Number Matches - 1 1 1 1 1 1
JESD-609 code - - e0 e0 e0 e0 -
Maximum power dissipation(Abs) - - 40 W 25 W 40 W 1.7 W 40 W
Terminal surface - - Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) -
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