BF470 datasheet, PDF - EEWORLD Datasheet

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BF470: DescriptionPower Bipolar Transistor, 0.05A I(C), 250V V(BR)CEO, 1-Element, PNP, Silicon, TO-126, Plastic/Epoxy, 3 Pin, TO-126, 3 PIN; CategoryDiscrete semiconductor The transistor; File Size42KB，2 Pages; ManufacturerCentral Semiconductor

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BF470 Overview

Power Bipolar Transistor, 0.05A I(C), 250V V(BR)CEO, 1-Element, PNP, Silicon, TO-126, Plastic/Epoxy, 3 Pin, TO-126, 3 PIN

BF470 Parametric

Parameter Name	Attribute value
Is it lead-free?	Contains lead
Is it Rohs certified?	incompatible
Maker	Central Semiconductor
Parts packaging code	SIP
package instruction	TO-126, 3 PIN
Contacts	3
Reach Compliance Code	_compli
ECCN code	EAR99
Maximum collector current (IC)	0.05 A
Collector-emitter maximum voltage	250 V
Configuration	SINGLE
Minimum DC current gain (hFE)	50
JEDEC-95 code	TO-126
JESD-30 code	R-PSFM-T3
JESD-609 code	e0
Number of components	1
Number of terminals	3
Maximum operating temperature	150 °C
Minimum operating temperature	-65 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	FLANGE MOUNT
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Polarity/channel type	PNP
Maximum power consumption environment	1.25 W
Maximum power dissipation(Abs)	1.25 W
Certification status	Not Qualified
surface mount	NO
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	THROUGH-HOLE
Terminal location	SINGLE
Maximum time at peak reflow temperature	NOT SPECIFIED
transistor applications	AMPLIFIER
Transistor component materials	SILICON
Nominal transition frequency (fT)	60 MHz
VCEsat-Max	0.6 V

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Power Transistors

TO-126 Case

Top View

Bottom View

TYPE NO.

IC

(A)

MAX

1.0

4.0

0.5

4.0

1.5

3.0

2.0

4.0

0.05

PD

(W)

BVCBO

(V)

MIN

40

60

80

40

60

80

275

325

375

40

60

80

45

60

100

45

60

80

45

60

80

22

32

45

60

80

45

60

80

100

120

250

300

BVCEO

(V)

MIN

40

60

80

40

60

80

250

300

350

40

60

80

45

60

80

45

60

80

45

60

80

22

32

45

60

80

45

60

80

100

120

250

300

hFE

@ IC

(mA)

VCE(SAT)

(V)

MAX

0.6

1.0

2.0

0.5

0.8

0.6

0.5

0.6

0.8

2.5

2.8

2.5

2.8

2.5

2.8

2.5

0.6

@ IC

(A)

fT

(MHz)

MIN

3.0

2.0

10

25

--

3.0

1.0

60

NPN

2N4921

2N4922

2N4923

2N5190

2N5191

2N5192

2N5655

2N5656

2N5657

2N6037

2N6038

2N6039

BD135

BD137

BD139

BD175

BD177

BD179

BD233

BD235

BD237

BD433

BD435

BD437

BD439

BD441

BD675

BD675A

BD677

BD677A

BD679

BD679A

BD681

BD683

BF469

BF471

PNP

2N4918

2N4919

2N4920

2N5193

2N5194

2N5195

2N6034

2N6035

2N6036

BD136

BD138

BD140

BD176

BD178

BD180

BD234

BD236

BD238

BD434

BD436

BD438

BD440

BD442

BD676

BD676A

BD678

BD678A

BD680

BD680A

BD682

BD684

BF470

BF472

30

40

20

40

12.5

30

25

36

40

1.25

MIN

30

25

20

30

750

63

40

30

20

15

750

50

MAX

150

100

80

250

15,000

250

--

500

1,500

100

2,000

150

10

1.5

2.0

1.5

2.0

1.5

2.0

1.5

0.025

1.0

1.5

0.1

2.0

0.5

1.0

2.0

1.5

2.0

1.5

2.0

1.5

2.0

1.5

0.03

Shaded areas indicate Darlington.

(6-December 2004)

w w w. c e n t r a l s e m i . c o m

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