CP588-CMPT5086-CT datasheet, PDF

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CP588-CMPT5086-CT: DescriptionTransistor; CategoryDiscrete semiconductor The transistor; File Size645KB，2 Pages; ManufacturerCentral Semiconductor

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CP588-CMPT5086-CT Overview

Transistor

CP588-CMPT5086-CT Parametric

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Maker	Central Semiconductor
Reach Compliance Code	_compli
ECCN code	EAR99
Maximum collector current (IC)	0.05 A
Configuration	Single
Minimum DC current gain (hFE)	150
Maximum operating temperature	150 °C
Polarity/channel type	PNP
Maximum power dissipation(Abs)	0.35 W
Nominal transition frequency (fT)	40 MHz

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Small Signal Transistor

PROCESS

CP588

PNP - Low Noise Amplifier Transistor Chip

PROCESS DETAILS

Process

Die Size

Die Thickness

Base Bonding Pad Area

Emitter Bonding Pad Area

Top Side Metalization

Back Side Metalization

GEOMETRY

GROSS DIE PER 4 INCH WAFER

53,730

PRINCIPAL DEVICE TYPES

2N2605

2N3799

PN4250A

CMPT5086

CMPT5087

EPITAXIAL PLANAR

15 x 15 MILS

9.0 MILS

4.0 x 4.0 MILS

5.5 x 5.5 MILS

Al - 30,000Å

Au - 18,000Å

BACKSIDE COLLECTOR

145 Adams Avenue

Hauppauge, NY 11788 USA

Tel: (631) 435-1110

Fax: (631) 435-1824

www.centralsemi.com

R3 (21-August 2006)

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