HS3J datasheet, PDF - EEWORLD Datasheet

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HS3J: DescriptionRectifier Diode, 1 Phase, 1 Element, 3A, 600V V(RRM), Silicon, DO-214AB, SMC, 2 PIN; CategoryDiscrete semiconductor diode; File Size189KB，2 Pages; ManufacturerGood-Ark; Environmental Compliance; Suzhou Gotech is a complete and comprehensive manufacturer of design, manufacturing, packaging and sales in the domestic semiconductor discrete device diode industry. From the independent development of front-end chips to various packaging technologies of back-end finished products, it has formed a complete industrial chain. The main products include leadless integrated circuit products and discrete device products with the latest packaging technology, automotive rectifier diodes, power modules, rectifier diode chips, silicon rectifier diodes, switching diodes, Zener diodes, micro bridge piles, military fuses, photovoltaic bypass modules, etc., with a total of more than 50 series and more than 1,500 varieties. The products are widely used in many fields such as aerospace, automobiles, green lighting, IT, household appliances and power supply devices for large equipment. Design and develop silver paste for solar cells and various electronic pastes, and develop and mass produce various new sensors in the field of the Internet of Things.

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HS3J Overview

Rectifier Diode, 1 Phase, 1 Element, 3A, 600V V(RRM), Silicon, DO-214AB, SMC, 2 PIN

HS3J Parametric

Parameter Name	Attribute value
Is it Rohs certified?	conform to
Maker	Good-Ark
package instruction	SMC, 2 PIN
Reach Compliance Code	compli
ECCN code	EAR99
application	EFFICIENCY
Configuration	SINGLE
Diode component materials	SILICON
Diode type	RECTIFIER DIODE
Maximum forward voltage (VF)	1.7 V
JEDEC-95 code	DO-214AB
JESD-30 code	R-PDSO-C2
Maximum non-repetitive peak forward current	150 A
Number of components	1
Phase	1
Number of terminals	2
Maximum operating temperature	150 °C
Minimum operating temperature	-55 °C
Maximum output current	3 A
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Maximum repetitive peak reverse voltage	600 V
Maximum reverse current	10 µA
Maximum reverse recovery time	0.075 µs
surface mount	YES
Terminal form	C BEND
Terminal location	DUAL

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HS3A thru HS3M

High Efficient Surface Mount Rectifiers

Reverse Voltage 50 to 1000 Volts Forward Current 3.0 Amperes

Features

Glass passivated junction chip.

For surface mounted application

Low forward voltage drop

Low profile package

Built-in stain relief, ideal for automatic placement

Fast switching for high efficiency

High temperature soldering:

250

C/10 seconds at terminals

Plastic material used carries Underwriters Laboratory

Classification 94V-O

Mechanical Data

Cases: Molded plastic

Terminals: Solder plated

Polarity: Indicated by cathode band

Weight: 0.009 ounce, 0.21 gram

Maximum Ratings and Electrical Characteristics

Ratings at 25

C ambient temperature unless otherwise specified.

Single phase, half wave, 60Hz, resistive or inductive load.

For capacitive load, derate current by 20%

Parameter

Maximum repetitive peak reverse voltage

Maximum RMS voltage

Maximum DC blocking voltage

Maximum average forward rectified current

See Fig.2

Peak forward surge current, 8.3ms single

half sine-wave superimposed on rated load

(JEDEC Method)

Maximum instantaneous forward voltage @ 3.0A

Maximum DC reverse current

at rated DC blocking voltage

@ T

=25

@ T

=100

Symbols

RRM

RMS

(AV)

FSM

STG

-55 to +150

1.0

10.0

200

H S 3A

H S 3B

100

H S 3D

200

140

200

H S 3F

300

210

300

3.0

H S 3G

400

280

400

H S 3J

600

420

600

H S 3K

800

560

800

H S 3M

1000

700

1000

Units

Volts

Amps

150.0

1.3

1.7

Amps

Volts

Maximum reverse recovery time (Note 1)

Typical junction capacitance (Note 2)

Operating junction temperature range

Storage temperature range

Notes:

1. Reverse Recovery Test Conditions: I

=0.5A, I

=1.0A, I

=0.25A

2. Measured at 1 MHz and Applied Reverse Voltage of 4.0 V D.C.

181

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