SyncMOS
F29C51004T/F29C51004B
4 MEGABIT (524,288 x 8 BIT)
5 VOLT CMOS FLASH MEMORY
Description
The F29C51004T/F29C51004B is a high speed
524,288 x 8 bit CMOS flash memory. Writing or
erasing the device is done with a single 5 Volt
power supply. The device has separate chip enable
CE, write enable WE, and output enable OE
controls to eliminate bus contention.
The F29C51004T/F29C51004B offers a combi-
nation of: Boot Block with Sector Erase/Write
Mode. The end of write/erase cycle is detected by
DATA Polling of I/O
7
or by the Toggle Bit I/O
6
.
TheF29C51004T/F29C51004B features a
sector erase operation which allows each sector to
be erased and reprogrammed without affecting
data stored in other sectors. The device also
supports full chip erase.
Boot block architecture enables the device to
boot from a protected sector located either at the
top (F29C51004T) or the bottom (F29C51004B).
All inputs and outputs are CMOS and TTL
compatible.
The F29C51004T/F29C51004B is ideal for
applications that require updatable code and data
storage.
Features
s
s
s
s
s
s
512Kx8-bit Organization
Address Access Time: 70, 90, 120 ns
Single 5V
±
10% Power Supply
Sector Erase Mode Operation
16KB Boot Block (lockable)
1K bytes per Sector, 512 Sectors
– Sector-Erase Cycle Time: 10ms (Max)
– Byte-Write Cycle Time: 20
µ
s (Max)
Minimum 10,000 Erase-Program Cycles
Low power dissipation
– Active Read Current: 20mA (Typ)
– Active Program Current: 30mA (Typ)
– Standby Current: 50
µ
A (Max)
Hardware Data Protection
Low V
CC
Program Inhibit Below 3.5V
Self-timed write/erase operations with end-of-cy-
cle detection
– DATA Polling
– Toggle Bit
CMOS and TTL Interface
Available in two versions
– F29C51004T (Top Boot Block)
– F29C51004B (Bottom Boot Block)
Packages:
– 32-pin Plastic DIP
– 32-pin TSOP-I
– 32-pin PLCC
s
s
s
s
s
s
s
s
Device Usage Chart
Access Time (ns)
Operating
Temperature
Range
0
°
C to 70
°
C
–40
°
C to +85
°
C
Package Outline
P
•
•
T
•
•
J
•
•
70
•
90
•
•
120
•
Temperature
Mark
Blank
I
F29C51004T/F29C51004B
V1.0
November 1998
1
SyncMOS
Absolute Maximum Ratings
(1)
Symbol
V
IN
V
IN
V
CC
T
STG
T
OPR
I
OUT
F29C51004T/F29C51004B
Parameter
Input Voltage (input or I/O pins)
Input Voltage (A
9
pin, OE)
Power Supply Voltage
Storage Temerpature (Plastic)
Operating Temperature
Short Circuit Current
(2)
Commercial
-2 to +7
-2 to +13
-0.5 to +5.5
-65 to +125
0 to +70
200 (Max.)
Industrial
-2 to +7
-2 to +13
-0.5 to +5.5
-65 to +150
-40 to + 85
200 (Max.)
Unit
V
V
V
°
C
°
C
mA
NOTE:
1. Stress greater than those listed unders “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress
rating only and functional operation of the device at these or any other conditions above those indicated in the operational sections
of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability.
2. No more than one output maybe shorted at a time and not exceeding one second long.
DC Electrical Characteristics
(over the commercial operating range)
Parameter
Name
V
IL
V
IH
I
IL
I
OL
V
OL
V
OH
I
CC1
Parameter
Input LOW Voltage
Input HIGH Voltage
Input Leakage Current
Output Leakage Current
Output LOW Voltage
Output HIGH Voltage
Read Current
Test Conditions
V
CC
= V
CC
Min.
V
CC
= V
CC
Max.
V
IN
= GND to V
CC
, V
CC
= V
CC
Max.
V
OUT
= GND to V
CC
, V
CC
= V
CC
Max.
V
CC
= V
CC
Min., I
OL
= 2.1mA
V
CC
= V
CC
Min, I
OH
= -400
µ
A
CE = OE = V
IL
, WE = V
IH
, all I/Os open,
Address input = V
IL
/V
IH
, at f = 1/t
RC
Min.,
V
CC
= V
CC
Max.
CE = WE = VIL, OE = V
IH
, V
CC
= V
CC
Max.
CE = OE = WE = V
IH
, V
CC
= V
CC
Max.
CE = OE = WE = V
CC
– 0.3V, V
CC
= V
CC
Max.
CE = OE = V
IL
, WE = V
IH
CE = OE = V
IL
, WE = V
IH
, A9 = V
H
Max.
Min.
—
2
—
—
—
2.4
—
Max.
0.8
—
±
1
±
10
0.4
—
30
Unit
V
V
µ
A
µ
A
V
V
mA
I
CC2
I
SB
I
SB1
V
H
I
H
Write Current
TTL Standby Current
CMOS Standby Current
Device ID Voltage for A
9
Device ID Current for A
9
—
—
—
11.5
—
40
1
50
12.5
50
mA
mA
µA
V
µA
F29C51004T/F29C51004B
V1.0
November 1998
4
51mcu
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