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FB1002

Description
5 A, SILICON, BRIDGE RECTIFIER DIODE
Categorysemiconductor    Discrete semiconductor   
File Size34KB,2 Pages
ManufacturerETC1
Download Datasheet View All

FB1002 Overview

5 A, SILICON, BRIDGE RECTIFIER DIODE

FB1000........ FB1010
FB1000L ....... FB1010L
10 Amp. Glass Passivated Bridge Rectifier
Dimensions in mm.
0.8
± 0.05
Ø 1
± 0.05
6.35
± 0.05
Voltage
50 to 1000 V
Current
10 A
®
Ø 2.5
Metal heat sink
Epoxy case
Metal heat sink
Epoxy case
18.1
Glass Passivated Junction
UL recognized under component
index file number E130180
Terminals: FASTON
Terminals: WIRE LEADS
18.1
± 0.5
0.1
Ø 5.21
+ 0
16.6
11.4
± 0.5
Max. Mounting Torque: 25 Kg
x
cm
Lead and polarity identifications
High surge current capability
Maximum Ratings, according to IEC publication No. 134
FB1000
FB1000L
FB1001
FB1001L
100
70
40
FB1002
FB1002L
200
140
80
FB1004
FB1004L
400
280
125
FB1006
FB1006L
600
420
250
FB1008
FB1008L
800
560
380
FB1010
FB1010L
1000
700
500
V
RRM
V
RMS
V
R
I
F(AV)
Peak Recurrent ReverseVoltage (V)
Maximum RMS Voltage (V)
Recommended Input Voltage (V)
Max. forward current R-load: At T case = 55
o
C
Max. forward current R-load:
At T case = 90
o
C
With Al Square Chassis (200 cm
2
x 3 mm.)
Tamb = 45
o
C
Recurrent peak forward current
10 ms. peak forward current
I
2
t value for fusing (t = 10 ms)
Operating temperature range
Storage temperature range
50
35
20
10 A
7.5 A
5A
50 A
200 A
200 A
2
sec
– 55 to + 150 °C
– 55 to + 150 °C
I
FRM
I
FSM
I
2
t
T
j
T
stg
Electrical Characteristics at Tamb = 25 °C
V
F
I
R
R
thj-c
Max. forward voltage drop per element at I
F
= 5 A
Max. reverse current per element at V
RRM
d.c.
Typical thermal resistance junction to case
Isolation voltage from case to leads
1.1 V
5µA
2
o
C/W
2500 Vac
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