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STPS5H100B-1

Description
5 A, 100 V, SILICON, RECTIFIER DIODE
CategoryDiscrete semiconductor    diode   
File Size50KB,5 Pages
ManufacturerSTMicroelectronics
Websitehttp://www.st.com/
Download Datasheet Parametric View All

STPS5H100B-1 Overview

5 A, 100 V, SILICON, RECTIFIER DIODE

STPS5H100B-1 Parametric

Parameter NameAttribute value
MakerSTMicroelectronics
package instructionR-PSIP-T3
Contacts3
Reach Compliance Codecompli
ECCN codeEAR99
applicationHIGH VOLTAGE POWER
Shell connectionCATHODE
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)0.85 V
JESD-30 codeR-PSIP-T3
Maximum non-repetitive peak forward current75 A
Number of components1
Phase1
Number of terminals3
Maximum operating temperature175 °C
Maximum output current5 A
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formIN-LINE
Certification statusNot Qualified
Maximum repetitive peak reverse voltage100 V
surface mountNO
technologySCHOTTKY
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
®
STPS5H100B/-1
HIGH VOLTAGE POWER SCHOTTKY RECTIFIER
MAIN PRODUCT CHARACTERISTICS
I
F(AV)
V
RRM
Tj (max)
V
F
(max)
FEATURES AND BENEFITS
NEGLIGIBLE SWITCHING LOSSES
HIGH JUNCTION TEMPERATURE CAPABILITY
LOW LEAKAGE CURRENT
GOOD TRADE OFF BETWEEN LEAKAGE
CURRENT AND FORWARD VOLTAGE DROP
AVALANCHE RATED
DESCRIPTION
Schottky barrier rectifier designed for high fre-
quency miniature Switched Mode Power Sup-
plies such as adaptators and on board DC to
DC converters.
A
K
NC
5A
100 V
175 °C
0.61 V
K
A
NC
DPAK
STPS5H100B
K
IPAK
STPS5H100B-1
ABSOLUTE RATINGS
(limiting values)
Symbol
V
RRM
I
F(RMS)
I
F(AV)
I
FSM
I
RRM
I
RSM
T
stg
Tj
dV/dt
Parameter
Repetitive peak reverse voltage
RMS forward current
Average forward current
Surge non repetitive forward current
Repetitive peak reverse current
Non repetitive peak reverse current
Storage temperature range
Maximum operating junction temperature *
Critical rate of rise of reverse voltage
Tc = 165°C
δ
= 0.5
tp = 10 ms sinusoidal
tp = 2
µs
square F = 1kHz
tp = 100
µs
square
Value
100
10
5
75
1
2
- 65 to + 175
175
10000
Unit
V
A
A
A
A
A
°C
°C
V/µs
* :
dPtot
1
<
thermal runaway condition for a diode on its own heatsink
Rth
(
j
a
)
dTj
1/5
July 1999 - Ed: 4B
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