VS-FCSP1H40LTR
www.vishay.com
Vishay Semiconductors
FlipKY
®
,
1 A Chip Scale Package Schottky Barrier Rectifier
FEATURES
•
•
•
•
•
•
•
Super low profile (0.6 mm)
One-fifth footprint of SMA
Ultralow V
F
per footprint area
Low leakage
Low thermal resistance
Available tested on tape and reel
Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
FlipKY
®
•
•
•
•
•
Reverse polarity protection
Current steering
Freewheeling
Flyback
Oring
DESCRIPTION
PRODUCT SUMMARY
I
F(AV)
V
R
V
F
at I
F
I
RM
max. at 25 °C
I
RM
max. at 125 °C
T
J
max.
E
AS
1A
40 V
0.42 V
15 μA
4 mA
150 °C
10 mJ
Vishay’s FlipKY
®
product family utilizes wafer level
chip scale packaging to deliver Schottky diodes with the
lowest V
F
to PCB footprint area in industry. The four
bump 1.5 mm x 1.5 mm devices can deliver up to 1 A and
occupy only 2.3 mm
2
of board space. The anode and
cathode connections are made through solder bump pads
on one side of the silicon enabling designers to strategically
place the diodes on the PCB. This design not only minimizes
board space but also reduces thermal resistance and
inductance, which can improve overall circuit efficiency.
Typical applications include hand-held, portable equipment
such as cell phones, MP3 players, bluetooth, GPS, PDAs,
and portable hard disk drives where space savings and
performance are crucial.
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
V
RRM
I
F(AV)
I
FSM
V
F
T
J
1 Apk, T
J
= 125 °C
Rectangular waveform
CHARACTERISTICS
MAX.
40
1
250
0.42
- 55 to 150
UNITS
V
A
V
°C
VOLTAGE RATINGS
PARAMETER
Maximum DC reverse voltage
Maximum working peak reverse voltage
SYMBOL
V
R
V
RWM
VS-FCSP1H40LTR
40
UNITS
V
Revision: 04-Jul-11
Document Number: 94493
1
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-FCSP1H40LTR
www.vishay.com
Vishay Semiconductors
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Maximum average forward current
Maximum peak one cycle
non-repetitive surge current at 25 °C
Non-repetitive avalanche energy
Repetitive avalanche current
SYMBOL
I
F(AV)
I
FSM
10 ms sine or 6 ms rect. pulse
E
AS
I
AR
TEST CONDITIONS
50 % duty cycle at T
PCB
= 117 °C, rectangular waveform
5 μs sine or 3 μs rect. pulse
Following any rated
load condition and with
rated V
RRM
applied
VALUES
1.0
250
21
10
2.0
mJ
A
A
UNITS
T
J
= 25 °C, I
AS
= 2.0 A, L = 5.0 mH
Current decaying linearly to zero in 1 μs
Frequency limited by T
J
maximum V
A
= 1.5 x V
R
typical
ELECTRICAL SPECIFICATIONS
(T
J
= 25 °C unless otherwise noted)
PARAMETER
SYMBOL
1A
Maximum forward voltage drop
See fig. 1
V
FM (1)
2A
1A
2A
TEST CONDITIONS
T
J
= 25 °C
T
J
= 125 °C
V
R
= Rated V
R
T
J
= 25 °C
Maximum reverse leakage current
See fig. 2
I
RM (1)
T
J
= 125 °C
V
R
= 20 V
V
R
= 10 V
V
R
= 5 V
V
R
= Rated V
R
V
R
= 20 V
V
R
= 10 V
V
R
= 5 V
Maximum junction capacitance
Maximum voltage rate of charge
Note
(1)
Pulse width < 300 μs, duty cycle < 2 %
C
T
dV/dt
V
R
= 5 V
DC
(test signal range 100 kHz to 1 MHz), 25 °C
Rated V
R
TYP.
0.48
0.54
0.38
0.48
3
0.5
0.2
0.15
2.5
0.9
0.6
0.5
-
-
MAX.
0.52
0.59
0.42
0.52
15
1
0.5
0.3
4
2
1.5
1
160
10 000
pF
V/μs
mA
μA
V
UNITS
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
Maximum junction and storage
temperature range
Typical thermal resistance,
junction to PCB
Maximum thermal resistance,
junction to ambient
Notes
(1)
SYMBOL
T
J (1)
, T
Stg
R
thJL (2)
R
thJA
DC operation
TEST CONDITIONS
VALUES
- 55 to 150
40
UNITS
°C
°C/W
62
dP
tot
1
------------ < -------------
thermal runaway condition for a diode on its own heatsink
-
-
dT
J
R
thJA
Mounted 1" square PCB
(2)
Revision: 04-Jul-11
Document Number: 94493
2
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-FCSP1H40LTR
www.vishay.com
160
DC
D = 3/4
D = 1/2
D = 1/3
D = 1/4
D = 1/5
Vishay Semiconductors
Allowable Case Temperature (°C)
10
I
F
- Instantaneous
Forward Current (A)
140
T
J
= 150 °C
1.0
T
J
= 125 °C
120
100
Square wave (D = 0.50)
80 % V
R
applied
See note (1)
T
J
= 25 °C
0.1
0.2
80
0.3
0.4
0.5
0.6
0.7
0.8
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
V
FM
- Forward Voltage Drop (V)
Fig. 1 - Maximum Forward Voltage Drop Characteristics (Per Leg)
I
F(AV)
- Average Forward Current (A)
Fig. 4 - Maximum Allowable Case Temperature vs.
Average Forward Current (Per Leg)
0.7
100
I
R
- Reverse Current (mA)
T
J
= 150 °C
T
J
= 125 °C
T
J
= 100 °C
T
J
= 75 °C
T
J
= 50 °C
T
J
= 25 °C
Average Power Loss (W)
10
1.0
0.1
0.01
0.001
0.0001
0.6
0.5
0.4
0.3
0.2
0.1
0
D = 0.20
D = 0.25
D = 0.33
D = 0.50
D = 0.75
RMS limit
DC
0
5
10
15
20
25
30
35
40
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
V
R
- Reverse Voltage (V)
Fig. 2 - Typical Values of Reverse Current vs.
Reverse Voltage (Per Leg)
160
I
F(AV)
- Average Forward Current (A)
Fig. 5 - Forward Power Loss Characteristics (Per Leg)
1000
C
T
- Junction Capacitance (pF)
T
J
= 25 °C
140
120
100
80
60
40
10
I
FSM
- Non-Repetitive
Surge Current (A)
At any rated load condition
and with rated V
RRM
applied
following surge
100
0
5
10
15
20
25
30
35
40
45
10
100
1000
10 000
V
R
- Reverse Voltage (V)
Fig. 3 - Typical Junction Capacitance vs.
Reverse Voltage (Per Leg)
t
p
- Square Wave Pulse Duration (µs)
Fig. 6 - Maximum Non-Repetitive Surge Current (Per Leg)
Note
(1)
Formula used: T = T - (Pd + Pd
C
J
REV
) x R
thJC
;
Pd = Forward power loss = I
F(AV)
x V
FM
at (I
F(AV)
/D) (see fig. 6); Pd
REV
= Inverse power loss = V
R1
x I
R
(1 - D); I
R
at 80 % V
R
applied
Revision: 04-Jul-11
Document Number: 94493
3
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-FCSP1H40LTR
www.vishay.com
Vishay Semiconductors
L
High-speed
switch
Freewheel
diode
40HFL40S02
+ V
d
= 25 V
D.U.T.
IRFP460
R
g
= 25
Ω
Current
monitor
Fig. 7 - Unclamped Inductive Test Circuit
LINKS TO RELATED DOCUMENTS
Dimensions
Part marking information
Packaging information
SPICE model
www.vishay.com/doc?95282
www.vishay.com/doc?95281
www.vishay.com/doc?95062
www.vishay.com/doc?95421
Revision: 04-Jul-11
Document Number: 94493
4
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
Outline Dimensions
Vishay High Power Products
FlipKY
®
1 A/1.5 A (Large Bump Pad Design)
DIMENSIONS
in millimeters
Ball assignments
0.10 (0.004) C
2x
B
1.524
A
1 = Cathode
2 = Cathode
3 = Anode
4 = Anode
0.10 (0.004) C
2x
0.600
0.520
0.205
0.175
4
2 x 0.400
3
1.524
1.524
0.300
1
2
0.800
4x
Recommended footprint
0.395
0.355
0.800
Cathode
ball
1
Cathode
ball
2
0.800
Anode
ball
4
Anode
ball
3
4 x Ø 0.35
Notes
(1)
Dimensioning and tolerancing per ASME Y14.5M-1994
(2)
Controlling dimension: millimeter
Document Number: 95282
Revision: 02-Apr-08
For technical questions concerning discrete products, contact: diodes-tech@vishay.com
For technical questions concerning module products, contact: ind-modules@vishay.com
www.vishay.com
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