BC 817-16W
NPN Silicon AF Transistor
• For general AF applications
• High collector current
• High current gain
• Low collector-emitter saturation voltage
• Complementary types: BC807W, BC808W (PNP)
Type
BC 817-16W
BC 817-25W
BC 817-40W
BC 818-16W
BC 818-25W
BC 818-40W
Marking Ordering Code
6As
6Bs
6Cs
6Es
6Fs
6Gs
Q62702-C2320
Q62702-C2278
Q62702-C2321
Q62702-C2322
Q62702-C2323
Q62702-C2324
Pin Configuration
1=B
1=B
1=B
1=B
1=B
1=B
2=E
2=E
2=E
2=E
2=E
2=E
3=C
3=C
3=C
3=C
3=C
3=C
Package
SOT-323
SOT-323
SOT-323
SOT-323
SOT-323
SOT-323
Maximum Ratings
Parameter
Collector-emitter voltage
BC 817 W
BC 818 W
Collector-base voltage
BC 817 W
BC 818 W
Emitter-base voltage
DC collector current
Peak collector current
Base current
Total power dissipation,
T
S
= 130°C
Junction temperature
Storage temperature
Thermal Resistance
Junction ambient
1)
Symbol
Values
45
25
Unit
V
V
CEO
V
CBO
50
30
V
EBO
I
C
I
CM
I
B
P
tot
T
j
T
stg
R
thJA
R
thJS
1
5
500
1
100
250
150
- 65 ... + 150
≤
215
≤
80
mA
A
mA
mW
°C
K/W
Junction - soldering point
1) Package mounted on pcb 40mm x 40mm x 1.5mm / 0.5cm
2
Cu
Semiconductor Group
Dec-19-1996
BC 817-16W
Electrical Characteristics
at
T
A
=25°C, unless otherwise specified
Parameter
Symbol
min.
DC Characteristics
Collector-emitter breakdown voltage
Values
typ.
max.
Unit
V
(BR)CEO
45
25
-
-
-
-
-
-
-
-
160
250
350
-
-
-
-
-
-
-
-
-
-
100
50
100
V
I
C
= 10 mA,
I
B
= 0 , BC 817 W
I
C
= 10 mA,
I
B
= 0 , BC 818 W
Collector-base breakdown voltage
V
(BR)CBO
50
30
I
C
= 10 µA,
I
B
= 0 , BC 817 W
I
C
= 10 µA,
I
B
= 0 , BC 818 W
Base-emitter breakdown voltage
V
(BR)EBO
5
I
E
= 10 µA,
I
C
= 0
Collector-base cutoff current
I
CBO
-
-
nA
µA
nA
-
-
100
160
250
60
100
170
250
400
630
-
-
-
V
-
0.7
1.2
V
CB
= 25 V,
T
A
= 25 °C
V
CB
= 25 V,
T
A
= 150 °C
Emitter cutoff current
I
EBO
h
FE
V
EB
= 4 V,
I
C
= 0
DC current gain
I
C
= 100 mA,
V
CE
= 1 V, BC ... 16 W
I
C
= 100 mA,
V
CE
= 1 V, BC ... 25 W
I
C
= 100 mA,
V
CE
= 1 V, BC ... 40 W
I
C
= 300 mA,
V
CE
= 1 V, BC ... 16 W
I
C
= 300 mA,
V
CE
= 1 V, BC ... 25 W
I
C
= 300 mA,
V
CE
= 1 V, BC ... 40 W
Collector-emitter saturation voltage 1)
V
CEsat
V
BEsat
-
I
C
= 500 mA,
I
B
= 50 mA
Base-emitter saturation voltage 1)
I
C
= 500 mA,
I
B
= 50 mA
1) Pulse test: t < 300µs; D < 2%
Semiconductor Group
2
Dec-19-1996
BC 817-16W
NPN Silicon AF Transistor
Electrical Characteristics
at
T
A
=25°C, unless otherwise specified
Parameter
Symbol
min.
AC Characteristics
Transition frequency
Values
typ.
max.
Unit
f
T
-
170
6
60
-
MHz
pF
-
-
-
I
C
= 50 mA,
V
CE
= 5 V,
f
= 100 MHz
Collector-base capacitance
C
cb
C
eb
-
V
CB
= 10 V,
f
= 1 MHz
Emitter-base capacitance
V
EB
= 0.5 V,
f
= 1 MHz
Semiconductor Group
3
Dec-19-1996
BC 817-16W
Total power dissipation
P
tot
=
f
(T
A
*;T
S
)
* Package mounted on epoxy
Permissible Pulse Load
R
thJS
=
f(t
p
)
300
10
3
K/W
mW
P
tot
200
T
S
R
thJS
10
2
150
T
A
10
1
0.5
0.2
0.1
0.05
0.02
0.01
0.005
D=0
100
10
0
50
0
0
20
40
60
80
100
120 °C 150
T
A
,T
S
10
-1
-6
10
10
-5
10
-4
10
-3
10
-2
10
s 10
t
p
-1
0
Permissible Pulse Load
P
totmax
/
P
totDC
=
f(t
p
)
Collectot cutoff current
I
CBO
=
f
(T
A
)
V
CB
= 60V
10
3
-
P
totmax
/P
totDC
10
2
D=0
0.005
0.01
0.02
0.05
0.1
0.2
0.5
10
1
10
0
-6
10
10
-5
10
-4
10
-3
10
-2
10
s 10
t
p
-1
0
Semiconductor Group
4
Dec-19-1996
BC 817-16W
DC current gain
h
FE
=
f
(I
C
)
V
CE
= 1V
Transition frequency
f
T
=
f
(I
C
)
VCE = 5V
Base-emitter saturation voltage
I
C
= f (V
BEsat
),
h
FE
= 10
Collector-emitter saturation voltage
I
C
= f (V
CEsat
),
h
FE
= 10
Semiconductor Group
5
Dec-19-1996
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