XI’AN IR-PERI
Company
Features
Advanced Process Technology
Ultra Low On-Resistance
Dynamic dv/dt Rating
175
o
C Operating Temperature
Fast Switching
Fully Avalanche Rated
]HALF-BRODGE ^
HEXFET Power MOSFET A - A - PAK
PRELIMINARY
.2 # 6) 7
!
"
#
V
DSS
=100V
R
DS(on)
=0.009Ω
I
D
=170A
$
%
Benefits
•
•
•
•
Increased operating efficiency
Direct mounting to heatsink
Performance optimized for power conversion: UPS,
SMPS, Welding,Mortor Control
Lower EMI, requries less snubbing
Absolute Maximum Ratings
I
D
@ Tc=25
o
C
I
D
@ Tc=100
o
C
I
DM
P
D
@ Tc=25
o
C
V
GS
E
AS
I
AR
E
AR
dv/dt
T
J
T
STG
Continuous Drain Current,V
GS
@10V
Continuous Drain Current,V
GS
@10V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate- to- Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction Temperature Range
Storage Temperature Range
Parameter
170
120
670
580
3.8
±
30
1350
100
58
2.3
-55 to +175
-55 to +175
Max.
Units
A
W
W/
o
C
V
m
J
A
mJ
V/ns
C
o
Termal / Mechanical Characteristics
R
θJC
R
θJC
R
θCS
Parameter
Termal Resistance, Junction-to- Case- IBGT
Termal Resistance, Junction-to- Case- Diode
Termal Resistance, Csar-to- Sink- Module
Mouting Torque, Case-to-Heatsink
Mouting Torque, Case-to-Terminal 1,2 & 3
Weight of Module
Typ.
-
-
0.1
-
-
0.26
0.36
-
4.0
3.0
-
Max.
Units
o
C/W
N.m
g
100
1
.2 # 6) 7
XI’AN IR-PERI
C ompany
Min.
100
3.0
52
Electrical Characteristics @ T
J
=25
o
C(unless otherwise specified)
Parameter
V
(BR)DSS
DV
(BR)DSS/
DT
J
R
DS(on)
V
GS(th
g
fe
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(
on
t
r
t
d(
off
t
f
L
D
L
S
C
iss
C
oss
C
rss
C
oss
C
oss
C
oss eff.
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Drain-to-Source Leakage Current
Drain-to-Source Forward Current
Drain-to-Source Reverse Current
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain (Miller) Charge
Turn - On Delay Time
Rise Time
Turn - Off Delay Time
Fall Time
Intemal Drain Inductance
Intemal Source Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
Effective Output Capacitance
Typ.
0.11
260
49
160
24
270
45
140
5.0
13
6790
2470
990
10740
1180
2210
Max.
0.009
5.0
25
250
100
-100
390
74
250
Units
V
V/
o
C
Ω
V
S
Conditions
V
GS
=0V, I
D
=250
µ
A
Reference to 25
o
C, I
D
=250
µ
A
V
GS
=10V, I
D
=100A
V
DS
=10V, I
D
=250
µ
A
V
DS
=50V, I
D
=100A
V
DS
=100V,V
GS
=0V
V
DS
=80V,V
GS
=0V,T
J
=125
o
C
V
GS
=30V
V
GS
=-30V
I
D
=100A
µ
A
nA
nC
V
DS
=80V
V
GS
=10V
V
DD
= 50V
nS
I
D
= 100A
R
G
=1.03Ω
V
GS
= 10V
nH
Between lead,6mm from
package and center of die
V
GS
= 0V
V
DS
= 25V
pF
f
=1.0MH
Z
V
GS
=0V,V
DS
=1.0V,f=1.0MH
Z
V
GS
=0V,V
DS
=80V,f=1.0MH
Z
V
GS
=0V,V
DS
=0V to 80V
Dynamic Characteristics - T
J
=125
o
C (unless otherwise specified)
Parameter
I
S
I
SM
V
SD
t
rr
Q
rr
t
on
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Diode Reverse Recovery Time
Diode Reverse Recovery Charge
Forward Turn-On Time
220
1640
1.3
330
2460
V
nS
nC
670
Min.
Typ.
Max.
174
Units
A
Conditions
MOSFET symbol
showing the
integral reverse
p-n junction diode
T
J
=25
o
C,I
S
=100A,V
GS
=0V
T
J
=25
o
C,I
F
=100A
di/dt=100A/
µ
s
Intrinsic turn-on time is negligible (turn-on is dominated by Ls+Ld)
2
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